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    DIODE MARKING CODE V3 Search Results

    DIODE MARKING CODE V3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    DIODE MARKING CODE V3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking A45

    Abstract: ERC13 mla diode
    Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight


    OCR Scan     		ERC13 JSfflS14 marking A45 mla diode PDF

    HBAT-540C temperature data sheet from agilent

    Abstract: diode IN 5402 540b diode Marking code v3 AN1124 ct 4060 marking code 4e marking code V3 HBAT-5400 pn junction diode ideality factor
    Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C HBAT-540E/-540F Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View Description • Low Capacitance


    Original     		HBAT-5400/-5402 HBAT-540B/-540C HBAT-540E/-540F HBAT-5400 HBAT-540x-TR2G 5968-7959E 5989-0472EN HBAT-540C temperature data sheet from agilent diode IN 5402 540b diode Marking code v3 AN1124 ct 4060 marking code 4e marking code V3 pn junction diode ideality factor PDF

    diode Marking code v3

    Contextual Info: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption


    Original     		S1102 Size-SOT23 S1102E OT-23: S12XX OT-23) diode Marking code v3 PDF

    5 volts ZENER DIODE 10 -50mA

    Abstract: MA marking marking c33 DZ23C2V7 DZ23C3V0 DZ23C3V3 DZ23C51 DZ23C6V2-7 J-STD-020A kvr 2000
    Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE Features • · · · · Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automatic Insertion D VZ For Both Diodes in One Case is £ 5% Common Anode Style Available


    Original     		DZ23C2V7 DZ23C51 300mW OT-23 OT-23, J-STD-020A MIL-STD-202, DS18002 DZ23C2V7-DZ23C51 5 volts ZENER DIODE 10 -50mA MA marking marking c33 DZ23C3V0 DZ23C3V3 DZ23C51 DZ23C6V2-7 J-STD-020A kvr 2000 PDF

    mosfet bs250

    Abstract: BS250 0610L TP0610L VP0610T BS250 mosfet equivalent of BS250 AN804 TP0610T VP0610L
    Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4


    Original     		TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T S-04623--Rev. 03-Sep-01 mosfet bs250 BS250 0610L TP0610L VP0610T BS250 mosfet equivalent of BS250 AN804 TP0610T VP0610L PDF

    DZ23C12 Spice

    Abstract: kvp diode DZ23C27 marking C15 DZ23C2V7 DZ23C3V0 DZ23C3V3 DZ23C3V6 DZ23C3V9 DZ23C4V3
    Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE SPICE MODELS: DZ23C27 DZ23C3V0 DZ23C3V3 DZ23C3V6 DZ23C3V9 DZ23C4V3 DZ23C4V7 DZ23C5V1 DZ23C5V6 DZ23C6V2 DZ23C6V8 DZ23C7V5 DZ23C8V2 DZ23C9V1 DZ23C10 DZ23C11 DZ23C12 DZ23C13 DZ23C15 DZ23C16 DZ23C18 DZ23C20 DZ23C22 DZ23C24 DZ23C27 DZ23C30


    Original     		DZ23C2V7 DZ23C51 300mW DZ23C27 DZ23C3V0 DZ23C3V3 DZ23C3V6 DZ23C3V9 DZ23C4V3 DZ23C4V7 DZ23C12 Spice kvp diode marking C15 PDF

    SAP5 Application Notes

    Abstract: 7ax7 EN954-1 F125 SAP51 gyrator zmd asi programmer usb
    Contextual Info: SAP5S / SAP51 Universal Actuator-Sensor Interface IC Datasheet Revision C Description Features • • • • • • • • • Universal application in AS-i Slave, Master, Repeater and Bus-Monitor components Support of AS-i Complete Specification V3.0, including all optional features


    Original     		SAP51 SAP5 Application Notes 7ax7 EN954-1 F125 SAP51 gyrator zmd asi programmer usb PDF

    diode MARKING CODE A9

    Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
    Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"


    OCR Scan     		160-i f-1SS349-- SS181 SS184 SS187 SS190 1SS307 SS193 HN2D01P HN1D01F diode MARKING CODE A9 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking PDF

    RBO08-40G

    Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
    Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.


    Original     		RBO08-40G/M/T RBO08-40G PowerSO-10TM RBO08-40M RBO08-40G RBO08-40T RBO08-40M VF13 aluminium plane heatsink PDF

    qfn 3x3 tray dimension

    Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
    Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		UG112 UG072, UG075, XAPP427, qfn 3x3 tray dimension XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga PDF

    AUGP4062D

    Abstract: AUIRGP4062D AUGP4062D-E
    Contextual Info: PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 24A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA


    Original     		6353A AUIRGP4062D AUIRGP4062D-E O-247AC AUGP4062D AUGP4062D-E PDF

    TN0201K

    Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
    Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35


    Original     		TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL 08-Apr-05 TN0201K TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236 PDF

    zener diode Marking code v3

    Abstract: sot23 marking code v7 marking code V6 surface mount diode "Marking Code 183" Zener diode green marking code v6 SOT23 marking code V6 DIODE marking code v6 29 DIODE MARKING CODE V1
    Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • • Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automated Insertion Δ VZ For Both Diodes in One Case is ≤ 5%


    Original     		DZ23C2V7 DZ23C51 300mW AEC-Q101 J-STD-020 MIL-STD-202, 20cknowledge DS18002 zener diode Marking code v3 sot23 marking code v7 marking code V6 surface mount diode "Marking Code 183" Zener diode green marking code v6 SOT23 marking code V6 DIODE marking code v6 29 DIODE MARKING CODE V1 PDF

    schaffner ri 229 pc

    Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
    Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.


    Original     		RBO40-40G/M/T RBO40-40G PowerSO-10TM RBO40-40M O220AB RBO40-40T schaffner ri 229 pc Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31 PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


    Original     		HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    72678

    Abstract: TN0200K-T1-E3 TN0200K TN0200K-T1 TN0200KT 40243
    Contextual Info: TN0200K Vishay Siliconix New Product N-Channel 20-V D-S MOSFETs FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.73 0.5 @ VGS = 2.5 V 0.65 APPLICATIONS D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original     		TN0200K O-236 OT-23) TN0200K-T1--E3 08-Apr-05 72678 TN0200K-T1-E3 TN0200K TN0200K-T1 TN0200KT 40243 PDF

    2N7000KL

    Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
    Contextual Info: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL 08-Apr-05 2N7000KL 170KL BS170KL-TR1 2N7000KL-TR1 PDF

    SOT-323 31 MOSFET

    Abstract: Si1330EDL VISHAY MARKING mosfet kd
    Contextual Info: Si1330EDL New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 2.5 @ VGS = 10 V 0.25 3 @ VGS = 4.5 V 0.23 8 @ VGS = 3 V 0.05 APPLICATIONS D P-Channel Driver


    Original     		Si1330EDL OT-323 SC-70 Si1330EDL-T1 18-Jul-08 SOT-323 31 MOSFET VISHAY MARKING mosfet kd PDF

    marking v6 zener diode

    Abstract: single zener diode marking V14 VISHAY marking v25 zener diode Marking code v3 sod-123 DZ23-B11 ZENER B18 zener marking v6 diode zener B16 DZ23-B22 BZT52C
    Contextual Info: DZ23 Series VISHAY Vishay Semiconductors Dual Common-Cathode Zener Diodes Features • This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type


    Original     		OT-23 BZX84C, OD-123 BZT52C. D-74025 06-Oct-03 marking v6 zener diode single zener diode marking V14 VISHAY marking v25 zener diode Marking code v3 sod-123 DZ23-B11 ZENER B18 zener marking v6 diode zener B16 DZ23-B22 BZT52C PDF

    250KL

    Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
    Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2


    Original     		TP0610KL/BS250KL 0610KL TP0610KL-TR1 O-92-18RM O-226AA 08-Apr-05 250KL 40244 BS250KL TP0610KL TO-92-18RM S402 0610K PDF

    SI2306BDS-T1-E3

    Abstract: 50135 Si2306BDS
    Contextual Info: Si2306BDS New Product Vishay Siliconix N-Channel 30 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.047 @ VGS = 10 V 4.0 0.065 @ VGS = 4.5 V 3.5 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 3.0 TO-236 (SOT-23) G 1 S 2 3 D


    Original     		Si2306BDS O-236 OT-23) Si2306BDS-T1--E3 08-Apr-05 SI2306BDS-T1-E3 50135 PDF

    Si2312BDS-T1-E3

    Abstract: MOSFET SOT-23 marking code M2 Si2312BDS
    Contextual Info: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236


    Original     		Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 08-Apr-05 Si2312BDS-T1-E3 MOSFET SOT-23 marking code M2 PDF

    Si2327DS

    Contextual Info: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		Si2327DS O-236 OT-23) 08-Apr-05 PDF

    DIODE JS

    Abstract: jsmk diode Marking code v3 KT60 VDE 0435 time relay JS relay E56140 LR35579 C150 JS diode
    Contextual Info: POWER RELAY 1 POLE— 8 A MEDIUM LOAD CONTROL JS SERIES RoHS compliant n FEATURES UL, CSA, VDE, SEV, SEMKO, FIMKO, ÖVE, BSI recognized UL class B (130°C) insulation l 1 form A (SPST-NO) or 1 form C (SPDT) contact l Low profile and space saving—Height: 12.5 mm


    Original     		0438Bjitsu DIODE JS jsmk diode Marking code v3 KT60 VDE 0435 time relay JS relay E56140 LR35579 C150 JS diode PDF