DIODE MARKING CODE V3 Search Results

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

marking A45

Abstract: ERC13 mla diode
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight

HBAT-540C temperature data sheet from agilent

Abstract: diode IN 5402 540b diode Marking code v3 AN1124 ct 4060 marking code 4e marking code V3 HBAT-5400 pn junction diode ideality factor
Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C HBAT-540E/-540F Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View Description • Low Capacitance

diode Marking code v3

Contextual Info: S1104 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

H0263

Abstract: ETT4
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ f c iv • Marking Compact size, lightweight

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

diode Marking code v3

Contextual Info: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

diode Marking code v3

Contextual Info: S1101 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

vishay siliconix code marking

Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

Contextual Info: International IQ R Rectifier P D - 9.1644 IRL1004S/L PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRL1004S Low-profile through-hole (IRL1004L) Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating

5 volts ZENER DIODE 10 -50mA

Abstract: MA marking marking c33 DZ23C2V7 DZ23C3V0 DZ23C3V3 DZ23C51 DZ23C6V2-7 J-STD-020A kvr 2000
Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE Features • · · · · Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automatic Insertion D VZ For Both Diodes in One Case is £ 5% Common Anode Style Available

mosfet bs250

Abstract: BS250 0610L TP0610L VP0610T BS250 mosfet equivalent of BS250 AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4

SAP5 Application Notes

Abstract: 7ax7 EN954-1 F125 SAP51 gyrator zmd asi programmer usb
Contextual Info: SAP5S / SAP51 Universal Actuator-Sensor Interface IC Datasheet Revision C Description Features • • • • • • • • • Universal application in AS-i Slave, Master, Repeater and Bus-Monitor components Support of AS-i Complete Specification V3.0, including all optional features

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

qfn 3x3 tray dimension

Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

marking code V6 surface mount diode

Abstract: marking code V5 surface mount diode marking code V6 DIODE V6 marking code diode marking v6 zener diode kvp diode marking code kV5 surface mount diode MARKING V32 SOT23 kvp 30 DIODE DZ23C6V8
Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • • Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automatic Insertion ∆ VZ For Both Diodes in One Case is ≤ 5%

AUGP4062D

Abstract: AUIRGP4062D AUGP4062D-E
Contextual Info: PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 24A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA

TN0201K

Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35

zener diode Marking code v3

Abstract: sot23 marking code v7 marking code V6 surface mount diode "Marking Code 183" Zener diode green marking code v6 SOT23 marking code V6 DIODE marking code v6 29 DIODE MARKING CODE V1
Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • • Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automated Insertion Δ VZ For Both Diodes in One Case is ≤ 5%

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the