DIODE MARKING CODE 201 Search Results
DIODE MARKING CODE 201 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE MARKING CODE 201 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
Contextual Info: CA201 Series 200V to 600V / 1.2A FAST RECOVERY DIODE Outline Drawings, mm Features ø3.0 ±0.2 High speed switching. High reliability. ø0.56 +0.02 -0.01 25 MIN. 25 MIN. 5.0 ±0.2 Applications Marking High speed switching. Color code : Blue Voitage class |
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CA201 | |
4E diodeContextual Info: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E |
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OD-523 100mA 100mA 200mA 11-April 4E diode | |
VCUT07B1-HD1
Abstract: VCUT07B1
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VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VCUT07B1-HD1 VCUT07B1 | |
Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code |
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VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
nxp marking code
Abstract: BIDIRECTIONAL DIODE marking nxp package
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OD882D AEC-Q101 61000-4itions nxp marking code BIDIRECTIONAL DIODE marking nxp package | |
BAS16LDContextual Info: BAS16LD Single high-speed switching diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device SMD plastic package with visible and solderable side pads. |
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BAS16LD OD882D AEC-Q101 BAS16LD | |
PESD5V0S1ULDContextual Info: PESD5V0S1ULD Unidirectional ESD protection diode Rev. 1 — 19 October 2010 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in |
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OD882D AEC-Q101 PESD5V0S1ULD | |
fu120
Abstract: 12th fU-120 IRF RECTIFIER international rectifier code international rectifier p
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95077B IRFR5505PbF IRFU5505PbF IRFR/U5505PbF EIA-481 fu120 12th fU-120 IRF RECTIFIER international rectifier code international rectifier p | |
Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) |
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DFN1006B-3 OT883B) IEC61000-4-2 AEC-Q101 | |
AURIX
Abstract: ESD18VU1B-02LRH ESD18VU1B-02LR PG-TSSLP-2-17 X-GOLD ESD18VU1B-02LS
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ESD18VU1B ESD18VU1B-02LS ESD18VU1B-02LRH IEC61000-4-2 AURIX ESD18VU1B-02LRH ESD18VU1B-02LR PG-TSSLP-2-17 X-GOLD | |
Contextual Info: BAT54H Schottky barrier single diode in small SOD123F package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead SMD plastic package. |
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BAT54H OD123F BAT54H 771-BAT54H-T/R | |
smd diode code BAS85
Abstract: 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85
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BAS85 OD80C smd diode code BAS85 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85 | |
Contextual Info: PPJZ20N50 500V N-Channel MOSFET Voltage 500 V Current TO-3PN 20 A Features RDS ON , VGS@10V,ID@10A<0.3 Ω 100% avalanche tested Improved dv/dt capability Low Gate Charge Comply with EU RoHS 2011/65/EU only Mechanical Data |
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PPJZ20N50 2011/65/EU MIL-STD-750 Z20N50 2013-REV | |
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DIODE BAT86 replacement
Abstract: bat86
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BAT86 DO-34) DIODE BAT86 replacement bat86 | |
SCHOTTKY DIODE 35V 18A SMD-220
Abstract: marking 5c diode 18TQ 18TQ035 18TQ040 18TQ045 18TQ045S 40HF P460 SMD-220
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PD-20178 18Amp 18TQ045 18TQ045 49E-01 77E-01 70E-01 05E-01 44E-02 SCHOTTKY DIODE 35V 18A SMD-220 marking 5c diode 18TQ 18TQ035 18TQ040 18TQ045S 40HF P460 SMD-220 | |
BAT74
Abstract: BAT74L41
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BAT74 OT143B BAT74 BAT74L41 | |
ESD18VU1B-02LS
Abstract: murata nfc antenna ESD18VU1B-02LRH nfc pcb antenna
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ESD18VU1B ESD18VU1B-02LRH ESD18VU1B-02LS IEC61000-4-2 ESD18VU1B-02LS murata nfc antenna nfc pcb antenna | |
Contextual Info: TSF10M45C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
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TSF10M45C 2011/65/EU 2002/96/EC ITO-220AB D1403010 | |
Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass |
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BAS86 OD80C 771-BAS86-T/R BAS86 | |
bat85
Abstract: BAT85 marking
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BAT85 DO-34) bat85 BAT85 marking | |
Contextual Info: TSF30U45C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
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TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408031 | |
BAS86Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass |
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BAS86 OD80C BAS86 | |
Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 |