DIODE MARKING CODE 201 Search Results
DIODE MARKING CODE 201 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE MARKING CODE 201 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
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VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
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VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
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VBUS051BD-HD1 LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
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VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration Package BAR 65-02W |
OCR Scan |
5-02W Q62702-A1216 SCD-80 Q1SD53M 100MHz | |
diode sod-123 marking code 120
Abstract: diode sod-123 marking code t2 BA 141 diode
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BAV19W-BAV21W OD-123 OD-123 BAV19W: BAV20W: BAV21W: diode sod-123 marking code 120 diode sod-123 marking code t2 BA 141 diode | |
Q62702-B0862
Abstract: diode T3 Marking diode marking AU
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3-02W VES05991 Q62702-B0862 SCD-80 Q62702-B0862 diode T3 Marking diode marking AU | |
diode A6s
Abstract: marking code 16W Q62702-A1050 a6s diode marking 16w
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OCR Scan |
Q62702-A1050 OT-323 40mmm diode A6s marking code 16W Q62702-A1050 a6s diode marking 16w | |
Contextual Info: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below) |
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VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
CA201Contextual Info: CA201 Series 200V to 600V / 1.2A FAST RECOVERY DIODE Outline Drawings, mm Features ø3.0 ±0.2 High speed switching. High reliability. ø0.56 +0.02 -0.01 25 MIN. 25 MIN. 5.0 ±0.2 Applications Marking High speed switching. Color code : Blue Voitage class |
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CA201 | |
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Contextual Info: CA201 Series 200V to 600V / 1.2A FAST RECOVERY DIODE Outline Drawings, mm Features ø3.0 ±0.2 High speed switching. High reliability. ø0.56 +0.02 -0.01 25 MIN. 25 MIN. 5.0 ±0.2 Applications Marking High speed switching. Color code : Blue Voitage class |
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CA201 | |
diode marking 714
Abstract: 6_8 surface mount diode diode marking 27 silicon reference diode zener diode code 27 Zener diode marking code sILICON ZENER DIODE
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46ces 27-October diode marking 714 6_8 surface mount diode diode marking 27 silicon reference diode zener diode code 27 Zener diode marking code sILICON ZENER DIODE | |
Contextual Info: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel |
OCR Scan |
Q62702-A0960 OD-123 EH007100 fl23Sb05 | |
Contextual Info: CA201 Series 200V to 600V / 1.2A FAST RECOVERY DIODE Outline Drawings, mm Features ø3.0 ±0.2 High speed switching. High reliability. ø0.56 +0.02 -0.01 25 MIN. 25 MIN. 5.0 ±0.2 Applications Marking High speed switching. Color code : Blue Voitage class |
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CA201 | |
diode marking 4LContextual Info: CMUSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4L is a high current, low VF silicon Schottky diode in an SOT-523 surface mount package. MARKING CODE: U24 |
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OT-523 240mV 100mA 200mA 17-November diode marking 4L | |
FLYBACK CLAMPING DIODEContextual Info: CMUSHW2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSHW2-4L is a high current low VF silicon Schottky diode in an SOT-523W surface mount package. MARKING CODE: 24W |
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OT-523W 240mV 100mA 200mA 17-November FLYBACK CLAMPING DIODE | |
4E diode
Abstract: marking code 4e
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OD-523 100mA 200mA 40Vmin. 100mA 200mA 25-January 4E diode marking code 4e | |
Contextual Info: CMUSHW2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSHW2-4L is a high current low VF silicon Schottky diode in an SOT-523W surface mount package. MARKING CODE: 24W |
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OT-523W 240mV 100mA 200mA 17-November | |
4E diode
Abstract: marking code 4e diode 4e
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OD-523 100mA 200mA 40Vmin. 11-April 4E diode marking code 4e diode 4e | |
4E diodeContextual Info: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E |
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OD-523 100mA 100mA 200mA 11-April 4E diode |