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    DIODE MARKING CODE 201 Search Results

    DIODE MARKING CODE 201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    DIODE MARKING CODE 201 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    Contextual Info: CA201 Series 200V to 600V / 1.2A FAST RECOVERY DIODE Outline Drawings, mm Features ø3.0 ±0.2 High speed switching. High reliability. ø0.56 +0.02 -0.01 25 MIN. 25 MIN. 5.0 ±0.2 Applications Marking High speed switching. Color code : Blue Voitage class


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    CA201 PDF

    4E diode

    Contextual Info: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E


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    OD-523 100mA 100mA 200mA 11-April 4E diode PDF

    VCUT07B1-HD1

    Abstract: VCUT07B1
    Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code


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    VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VCUT07B1-HD1 VCUT07B1 PDF

    Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code


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    VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    nxp marking code

    Abstract: BIDIRECTIONAL DIODE marking nxp package
    Contextual Info: PESD5V0S1BLD Low capacitance bidirectional ESD protection diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients.


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    OD882D AEC-Q101 61000-4itions nxp marking code BIDIRECTIONAL DIODE marking nxp package PDF

    BAS16LD

    Contextual Info: BAS16LD Single high-speed switching diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device SMD plastic package with visible and solderable side pads.


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    BAS16LD OD882D AEC-Q101 BAS16LD PDF

    PESD5V0S1ULD

    Contextual Info: PESD5V0S1ULD Unidirectional ESD protection diode Rev. 1 — 19 October 2010 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in


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    OD882D AEC-Q101 PESD5V0S1ULD PDF

    fu120

    Abstract: 12th fU-120 IRF RECTIFIER international rectifier code international rectifier p
    Contextual Info: PD - 95077B IRFR5505PbF IRFU5505PbF • • Lead-Free Halogen-Free 1 www.irf.com 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 3 www.irf.com © 2012 International Rectifier


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    95077B IRFR5505PbF IRFU5505PbF IRFR/U5505PbF EIA-481 fu120 12th fU-120 IRF RECTIFIER international rectifier code international rectifier p PDF

    Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)


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    DFN1006B-3 OT883B) IEC61000-4-2 AEC-Q101 PDF

    AURIX

    Abstract: ESD18VU1B-02LRH ESD18VU1B-02LR PG-TSSLP-2-17 X-GOLD ESD18VU1B-02LS
    Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series Bi-directional ESD / Transient Protection Diode ESD18VU1B-02LS ESD18VU1B-02LRH Data Sheet Revision 1.0, 2011-05-13 Preliminary Industrial and Multi-Market Edition 2011-05-13 Published by Infineon Technologies AG


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    ESD18VU1B ESD18VU1B-02LS ESD18VU1B-02LRH IEC61000-4-2 AURIX ESD18VU1B-02LRH ESD18VU1B-02LR PG-TSSLP-2-17 X-GOLD PDF

    Contextual Info: BAT54H Schottky barrier single diode in small SOD123F package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD123F small and flat lead SMD plastic package.


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    BAT54H OD123F BAT54H 771-BAT54H-T/R PDF

    smd diode code BAS85

    Abstract: 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85
    Contextual Info: BAS85 Schottky barrier diode Rev. 6 — 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted


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    BAS85 OD80C smd diode code BAS85 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85 PDF

    Contextual Info: PPJZ20N50 500V N-Channel MOSFET Voltage 500 V Current TO-3PN 20 A Features      RDS ON , VGS@10V,ID@10A<0.3 Ω 100% avalanche tested Improved dv/dt capability Low Gate Charge Comply with EU RoHS 2011/65/EU only Mechanical Data    


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    PPJZ20N50 2011/65/EU MIL-STD-750 Z20N50 2013-REV PDF

    DIODE BAT86 replacement

    Abstract: bat86
    Contextual Info: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode


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    BAT86 DO-34) DIODE BAT86 replacement bat86 PDF

    SCHOTTKY DIODE 35V 18A SMD-220

    Abstract: marking 5c diode 18TQ 18TQ035 18TQ040 18TQ045 18TQ045S 40HF P460 SMD-220
    Contextual Info: Bulletin PD-20178 rev. D 06/06 18TQ. 18TQ.S SCHOTTKY RECTIFIER 18 Amp IF AV = 18Amp VR = 35/ 45V Major Ratings and Characteristics Description/Features Characteristics Values Units IF(AV) Rectangular 18 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 s sine


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    PD-20178 18Amp 18TQ045 18TQ045 49E-01 77E-01 70E-01 05E-01 44E-02 SCHOTTKY DIODE 35V 18A SMD-220 marking 5c diode 18TQ 18TQ035 18TQ040 18TQ045S 40HF P460 SMD-220 PDF

    BAT74

    Abstract: BAT74L41
    Contextual Info: BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B


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    BAT74 OT143B BAT74 BAT74L41 PDF

    ESD18VU1B-02LS

    Abstract: murata nfc antenna ESD18VU1B-02LRH nfc pcb antenna
    Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.1, 2012-05-30 Final Power Management & Multimarket Edition 2012-05-30 Published by


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    ESD18VU1B ESD18VU1B-02LRH ESD18VU1B-02LS IEC61000-4-2 ESD18VU1B-02LS murata nfc antenna nfc pcb antenna PDF

    Contextual Info: TSF10M45C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


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    TSF10M45C 2011/65/EU 2002/96/EC ITO-220AB D1403010 PDF

    Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass


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    BAS86 OD80C 771-BAS86-T/R BAS86 PDF

    bat85

    Abstract: BAT85 marking
    Contextual Info: BAT85 Schottky barrier single diode 24 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode


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    BAT85 DO-34) bat85 BAT85 marking PDF

    Contextual Info: TSF30U45C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


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    TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408031 PDF

    BAS86

    Contextual Info: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass


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    BAS86 OD80C BAS86 PDF

    Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


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    TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 PDF