DIODE MARKING A9 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SIEMENS Silicon Schottky Diode BAT 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel Package1) BAT 62 62 Q62702-A971

A940

Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Contextual Info: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940

marking code R5 sot23

Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Contextual Info: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

Contextual Info: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C

Contextual Info: Central' Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C

745 diode

Abstract: 820 marking CBAS17 CR265
Contextual Info: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25oC

Contextual Info: SIEMENS Silicon PIN Diode BA 586 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 586 white P Q62702-A930

Contextual Info: SIEMENS Silicon PIN Diode BA 886 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 886 PC Q62702-A932

Contextual Info: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954

Contextual Info: Central TM Sem i c o n d u c t o r C o r p . CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE

CBAS17

Abstract: 820 marking
Contextual Info: CBAS17 SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

nfi7

Abstract: marking A95 SC201 SC201-4 SC201-8
Contextual Info: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications

Si2309DS

Abstract: Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

diode MARKING CODE A9

Abstract: Si2309DS
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.340 @ VGS = –10 V –1.25 0.550 @ VGS = –4.5 V –1 –60 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

diodes b

Abstract: AS21
Contextual Info: Silicon Switching Diodes • B AS 19 B AS 21 High-speed, high-voltage switch Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 19 B A S 20 B A S 21 JP JR JS Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95

Si2309DS

Abstract: Si2309DS-T1 SI2309DS-T1-E3
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

diode MARKING CODE A9

Abstract: diode MARKING A9 smd diode a9 smd diode marking A9 BAP70-03 SC-76 MARKING 54 "Pin Diode" smd diode marking 77
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP70-03 Silicon PIN diode Product specification Supersedes data of 2002 Aug 06 2004 Feb 10 Philips Semiconductors Product specification Silicon PIN diode BAP70-03 FEATURES PINNING • High voltage, current controlled RF resistor for

diode MARKING A9

Abstract: smd diode a9 DIODE SMD A9 smd diode marking 77 marking a9 transistor marking A9 A9 transistor SMD smd diode marking A9 marking 77 diode diode A9
Contextual Info: Diodes SMD Type Silicon PIN diode BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance.

Contextual Info: BAP70-03 Silicon PIN diode Rev. 6 — 7 March 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 SC-76 small SMD plastic package. 1.2 Features and benefits  High voltage current controlled RF resistor for attenuators

diode MARKING CODE A9

Abstract: NXP RF Marking Code HD radio nxp application BAP70-03 SC-76 BAP70 Series BAP70 smd diode marking A9
Contextual Info: BAP70-03 Silicon PIN diode Rev. 05 — 27 March 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: Product specification BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance. 0.375 +0.05