DIODE MARKING 84 Search Results

E72873

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product

BY228

Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Contextual Info: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1

marking code R5 sot23

Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Contextual Info: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

745 diode

Abstract: 820 marking CBAS17 CR265
Contextual Info: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25oC

Contextual Info: Central TM Sem i c o n d u c t o r C o r p . CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE

VUB116-16NOXT

Abstract: E72873
Contextual Info: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

1A444

Abstract: VF60100C
Contextual Info: PRODUCT INFORMATION 1A444 840nm Datacom, General Purpose VCSEL Laser Diode This Vertical Cavity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longitudinal mode, ensuring stable coupling of power and low noise.

1A448

Abstract: 1A448A
Contextual Info: PRODUCT INFORMATION 1A448 840nm Datacom VCSEL Laser Diode This Vertical Cavity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet and ATM applications. For eye safety, the optical power is attenuated to comply with IEC Laser Class 1 requirements.

1A239

Contextual Info: PRODUCT INFORMATION 840 nm 1A239 High-Performance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Since it operates at low drive current, it generates minimal heat — reducing cooling

VVZB135-16IOXT

Abstract: VVZB135-16
Contextual Info: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

IRFP448

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

zener diode marking code C3 sot23

Abstract: Marking C4 SOT23-5 identification code c3 SOT23-5 zener marking code C3 sot23 step up converter with output disconnect zener diode marking 4x sot23-5 package marking c5 marking code 10 sot23 top marking c2 sot23 AP1522
Contextual Info: AP1522 Step-Up DC/DC Converter „ Features „ General Description - High Efficiency: 84% Typical - 36V High Output Voltage - Fast 1MHz Switching Frequency - Low Profile SOT23-5 Pb-Free Packaging The AP1522 is a step-up DC/DC converter in a 5-Lead low profile SOT23-5 package. The AP1522

E6327

Abstract: Q62702-S568 Q67000-S243 marking BSs
Contextual Info: BSS 84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 84 -50 V -0.13 A 10 Ω SOT-23 SPs Type BSS 84 BSS 84 Ordering Code Q62702-S568

*f1010e

Abstract: irf1010e equivalent IRF1010E
Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

AP2315GEN

Abstract: A2 SOT-23 mosfet
Contextual Info: AP2315GEN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -30V RDS ON 1.25Ω ID - 840mA S SOT-23 Description G Advanced Power MOSFETs from APEC provide the designer

RB512S-30

Abstract: 3A1 zener diode rb512s marking B12 diode SCHOTTKY RB512 DS-1647P-03 RB-512S BZV55 Series marking Ax 976AS-6R8M
Contextual Info: AIC1647 White LED Step-Up Converter in SOT23 FEATURES DESCRIPTION 1.2MHz Fixed Frequency Current-Mode PWM Operation. AIC1647 is a fixed frequency step-up DC/DC Efficiency Up to 84% at VIN=4.2V, 3LEDs, ILED=20mA Drives Up to 6LEDs in series constant current to provide backlight in hand-

Contextual Info: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W •     Figure 1: Internal schematic diagram

bosch ecu 0 261 200 218 connection diagram

Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
Contextual Info: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: oakville@wielandinc.com On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection

HT7937

Contextual Info: HT7937 Built-in OVP White LED Step-up Converter Features • Integrated open-circuit protection · Low standby current: 0.1mA typ. (VSHDN=0V) · Over voltage protection · Matches LED current · Up to 84% efficiency at VIN=3V, 3LEDs, · Small value inductor and capacitors

FDB3632

Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V)