DIODE MARKING 84 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

E72873

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product

BY228

Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Contextual Info: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1

marking code R5 sot23

Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Contextual Info: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

Contextual Info: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C

Contextual Info: Central' Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C

745 diode

Abstract: 820 marking CBAS17 CR265
Contextual Info: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25oC

Contextual Info: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

DIODE BAT

Abstract: Q62702-A0960 sod-123 marking code 621 621 marking diode
Contextual Info: Silicon Schottky Diode BAT 14-098 Preliminary Data DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-098

VCUT07B1-HD1

Abstract: VCUT07B1
Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

Contextual Info: Central TM Sem i c o n d u c t o r C o r p . CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

CBAS17

Abstract: 820 marking
Contextual Info: CBAS17 SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

VUB116-16NOXT

Abstract: E72873
Contextual Info: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

2B454

Abstract: vcsel 795
Contextual Info: PRODUCT INFORMATION 2B454 840nm Datacom VCSEL Laser Diode This Vertical Cavity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It incorporates a photodiode to monitor the optical power and allow for feedback control.

vub 70

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

1A444

Abstract: VF60100C
Contextual Info: PRODUCT INFORMATION 1A444 840nm Datacom, General Purpose VCSEL Laser Diode This Vertical Cavity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longitudinal mode, ensuring stable coupling of power and low noise.

1A448

Abstract: 1A448A
Contextual Info: PRODUCT INFORMATION 1A448 840nm Datacom VCSEL Laser Diode This Vertical Cavity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet and ATM applications. For eye safety, the optical power is attenuated to comply with IEC Laser Class 1 requirements.

1A239

Contextual Info: PRODUCT INFORMATION 840 nm 1A239 High-Performance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Since it operates at low drive current, it generates minimal heat — reducing cooling

1A288

Contextual Info: PRODUCT INFORMATION 840nm 1A288 High-Performance LED This high speed device is optimized at 810 nm wavelength which is of particular interest for use in radiation-hardened fiber. It operates in a wide temperature range and delivers very high power to 200 µm core fiber,

Contextual Info: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

Contextual Info: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

VVZB135-16IOXT

Abstract: VVZB135-16
Contextual Info: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A