DIODE MARKING 7N Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1   * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested  1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1   FEATURES * RDS ON < 1.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  TO-220F TO-220 DESCRIPTION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N65G

Abstract: 7N65L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

R0813

Abstract: CSD02060G csd02060 q 406 813 CSD02060A D02060
Contextual Info: CSD02060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF AVG = 2A Qc Features • • • • • • • = 7nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2MOS

Abstract: MARKING J1A marking j5a KIC7S08FU
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC7S08FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 2-INPUT AND GATE DIM 2.0 0 + 0 .2 0 Al 1 .3 ± 0 .1 B 2 .1+ 0.1 B1 1 .2 5 + 0 .1 C D G FEATURES • • • • • • • H T High Speed : tpci=7ns Typ. at Vcc=5V.

Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)

JESD97

Abstract: STS9D8NH3LL 9D8H3LL
Contextual Info: STS9D8NH3LL Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET Power MOSFET Features Type STS9D8NH3LL VDSS RDS on Qg ID Q1 30V < 0.022Ω 7nC 8A Q2 30V < 0.015Ω 8nC 9A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced

1720i

Abstract: LT1720 LT1720CDD LT1720CS8 LT1720IDD LT1720IS8 LT1721 2N3866 equivalent data 2n3866 nanosecond pulse stretcher
Contextual Info: LT1720/LT1721 Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Tiny 3mm x 3mm x 0.8mm DFN Package LT1720

TD236

Abstract: 1SS336
Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)

simple proportional pulse stretcher

Contextual Info: LT1720/LT1721 Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4mA per Comparator Tiny 3mm x 3mm x 0.8mm DFN Package LT1720

F7N02Z

Abstract: D7N02
Contextual Info: MOTOROLA Order this document by MMDF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET 7.0 AMPERES

Contextual Info: s\L [FàlLIÀSI Final Electrical Specifications LT1394 TECHNOLOGY 7ns, Low Power, Single Supply, G round-Sensing C o m p a ra to r L i f m M a y 1998 FCflTURCS D C S C R IP TIO n • Ultrafast: 7ns ■ Low Power: 6mA ■ Low Offset Voltage: 0.8mV The LT 1394 isan UltraFast 7ns comparatorwith comple­

S7N03

Contextual Info: MOTOROLA Order this document by MMSF7N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F 7N 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: LT1394 u r m TECHNOLOGY 7nS/ |_Qw Power, Single Supply, G round-Sensing C o m p a ra to r DCSCRIPTIOn KfìTUlKS • UltraFast : 7ns ■ Low Power: 6mA ■ Low Offset Voltage: 0.8mV ■ Operates Off Single 5V or Dual ±5V Supplies ■ Input Common Mode Extends to Negative Supply