DIODE MARKING 51N Search Results

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

TD 2012

Abstract: 1E5 MARKING
Contextual Info: FDB070AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

76E-12

Abstract: fdb fairchild FDB070AN06A0 FDP070AN06A0
Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

76E-12

Abstract: FDB070AN06A0 29E-9 FDP070AN06A0 71e4 76E12
Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

FDB070AN06A0

Abstract: FDP070AN06A0 76E-12
Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

SCS215KG

Contextual Info: SCS215KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 15A QC 51nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS230KE2

Contextual Info: SCS230KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 15A/30A* QC 51nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

4203S

Abstract: AV2018 FMX-33S ULTRAFAST RECOVERY diode
Contextual Info: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.

Contextual Info: Ultrafast Recovery Diode FMXA-4203S General Description Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc. Applications

FMXA-4203S

Abstract: 4203S FMX-33S sanken lot number FMXA4203 B105 CF35 SANKEN power supply A18T FMX33S
Contextual Info: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.

4203S

Abstract: FMXA4203 sanken lot number B105 FMX-33S FMXA-4203S SANKEN power supply FMX33S
Contextual Info: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.

Contextual Info: AUTOMOTIVE GRADE Features • Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *

fds5170n7

Contextual Info: FDS5170N7 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: PD - 96121 IRF6726MPbF IRF6726MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching 

13M10

Abstract: IRF6726MTR1PBF IRF6726MTRPBF
Contextual Info: PD - 96121 IRF6726MPbF IRF6726MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching 

Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

IRF6794MTRPBF

Abstract: IRF6794M
Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

b3 diode

Abstract: diode CODE 51n to-236 marking code B3 diode marking 51n PZM4.3N marking code 4n marking 47n diode PZM15N diode CODE 5,1n
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PZM-N series Voltage regulator diodes Product specification Supersedes data of 1997 Dec 15 1999 Jan 28 Philips Semiconductors Product specification Voltage regulator diodes FEATURES PZM-N series PINNING

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D114 PZM-N series Voltage regulator diodes Product specification Supersedes data of 1997 Dec 15 1999 Jan 28 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series PINNING FEATURES • Total power dissipation:

STL51N3LLH5

Contextual Info: STL51N3LLH5 N-channel 30 V, 0.0105 Ω, 51 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS on max ID STL51N3LLH5 30 V < 0.0145 Ω 51 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

red yellow green zener diode value

Abstract: 4047N Zener diode SZ 600 red red green zener diode zener 102 zener diode z red orange green zener diode value ZENER DIODE color bands Zener Diode White noise MA4xxx purple purple green zener diode value zener diode sz 6
Contextual Info: Zener Diodes MAZ4xxxN Series MA4xxx(N Series) Silicon planar type Unit: mm For stabilization of power supply • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4xxx series) • Extremely good rising performance (in the low-current range)

transistor marking A9

Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
Contextual Info: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P

SOT89 voltage regulator marking code 93

Abstract: 51AX 156 20k Tantalum Capacitor 156 Tantalum Capacitor 16B APL5501 STD-020C diodes sc62 MARKING CODE sot-23-5 marking code ic Linear Regulator sot-89-5
Contextual Info: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 170mV (@500mA) Very low Shutdown Current : < 0.5uA