DIODE MARKING 4P Search Results

Contextual Info: Small Signal Diode SOT23 - —y Type Ratings 4“ ^ ^ 500 pcs vR 100 pcs Max Max 'f t rr cD SPECIFICATIONS Part Marking Single Diode BAS16 MMBD914 72-0016 72-0914 52-0016 52-0914 minilfeel 75V 250mA 6nS 2pF A6 100V 200mA 15nS 4pF 5D or D01 Schematic Top View

dual diode A7 W

Contextual Info: Small Signal Diodes SOT23 Type Ratings miniBag Order Number Number l RR Max CD Part Marking A6 A8 A841 A82 L20 D01/5D D18 Max Schematic Single Diode BAS 16 BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 72-0016 72-0019 72-0020 72-0021 72-0029 72-0914 72-4150 500 pc.

Contextual Info: Bridge Diode Large I o Single In-line Package OUTLINE D50XB80 Unit : mm Weight : 22g typ. Package TSB-4PIN 800V 50A 品名 Type No. • SIP • UL E142422 IFSM • • • ＋ ① ~ ② ∼ ④ − ⑤ ＋ SHINDENGEN D50XB 80 0264 ∼ 27 ∼ − 管理番号（例）

D50XB80

Abstract: SHINDENGEN DIODE
Contextual Info: 大容量 シングルインライン型 Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D50XB80 Unit : mm Weight : 22g （typ.） Package：TSB-4PIN 800V 50A 特長 品名 Type No. • 薄型 SIP パッケージ • UL E142422 • 高耐圧・高 IFSM

Contextual Info: Extract from the online catalog EMG 22-DIO 4P-1N5408 Order No.: 2952198 The illustration shows version EMG 22-DIO 4E Diode module, with four diodes, common cathode, diode type 1N 5408

Relay schrack RU

Abstract: omron relay G2R-2 8 pin 12V DC relay finder 12V DC Panasonic RELAY Cross Reference AROMAT hjq-22f 700-HN122 RELAY PCB DPDT 12V 8 pin 700-HC24 700-HN154 RELAY PCB DPDT 12V
Contextual Info: Relay Selection Guide Call 800 262.IDEC www.IDEC.com/relay RH Series - Compact Power Relays • Small industrial 10A GP relay • SPDT, DPDT, 3PDT, 4PDT contacts • Options: indicator LED, check-button and surge suppression diode • DIN rail, through panel, and PCB type sockets available

Contextual Info: 大容量 シングルインライン型 Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D50XB80 Unit : mm Weight : 22g （typ.） Package：TSB-4PIN 800V 50A 特長 品名 Type No. • 薄型 SIP パッケージ • UL E142422 • 高耐圧・高 IFSM

Contextual Info: ESDALCL6-4P6A Multi-line low capacitance and low leakage current ESD protection Datasheet − production data Features Diode array topology: • 4 lines protection ■ Low leakage current: – 10 nA at 3 V – 1 nA at 1 V ■ Very low diode capacitance 2.5 pF max.

DT80A

Contextual Info: STK03Y60 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=9.0Ω(Typ.) Ordering Information Type NO.

stk0465

Abstract: STK0465F stk04 stk046 TO-220F-3L MAX416
Contextual Info: STK0465F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=650V Min. Low Crss : Crss=4pF(Typ.) Low gate charge : Qg=12.3nC(Typ.) Low RDS(on) :RDS(on)=3.0Ω(Max.) Ordering Information Type NO.

STK0160

Abstract: N-CH POWER MOSFET TO-92 KSD-T0A010-004 MOSFET 300V DT80A
Contextual Info: STK0160 Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=9.0Ω(Typ.) D G Ordering Information

Contextual Info: STK0160 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=9.0Ω(Typ.) Ordering Information Type NO. Marking

Contextual Info: STK03Y60 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) Ordering Information Type NO.

Contextual Info: STK03Y60 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) Ordering Information Type NO.

Contextual Info: STK0160 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V tin. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=9.0Ω(Typ.) Ordering Information Type NO.

STK03Y60

Contextual Info: TENTATIVE STK03Y60 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) Ordering Information

Contextual Info: BAS116W/BAW156W/BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 200mWatts POWER 100 Volts FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz

Contextual Info: DATA SHEET BAS116W/BAW156W/BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER SOT-323 200mWatts Unit：inch mm Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz

Contextual Info: BAV170W-AU SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 200mWatts POWER 100 Volts FEATURES • • • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz

BAV199W

Abstract: code marking ssi sot-323
Contextual Info: DATA SHEET BAS116W/BAW156W/BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER SOT-323 200mWatts Unit：inch mm Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz

PC817XNNSZ0F Series

Abstract: PC817 PIn PC817X2NSZ
Contextual Info: PC817XNNSZ0F PC817XNNSZ0F Series DIP 4pin Photocoupler •Description ■Agency approvals/Compliance PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP. Input-output isolation voltage rms is 5kV. Collector-emitter voltage is 80V.

Contextual Info: 1N4448WSF SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data • • • • • • • • • • NEW PRODUCT Fast Switching Speed: trr ≤ 4.0ns Low Leakage Current: IR ≤ 25nA Low Capacitance: CT ≤ 4pF Flat Lead for High Thermal Efficiency

Contextual Info: 1N4448WSF SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data • • • • • • • • • • N EW PRODU CT Fast Switching Speed: trr 4.0ns Low Leakage Current: IR 25nA Low Capacitance: CT ≤ 4pF Flat Lead for High Thermal Efficiency Small Surface Mount Package

Contextual Info: KTLP260J Series 4PIN MINI-FLAT RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER cosmo Description Schematic The KTLP260J series consist of a GaAs infrared emitting diode non-zero-crossing optically silicon coupled bilateral to AC a 1 4 2 3 switch TRIAC . These devices isolate low voltage logic