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    DIODE MARKING 47 Search Results

    DIODE MARKING 47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    DIODE MARKING 47 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


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    LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR


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    LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape PDF

    Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current


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    BAS21HT1 BAS21HT1 PDF

    Contextual Info: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current


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    BAS20HT1 BAS20HT1 PDF

    BAS21HT1

    Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200


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    BAS21HT1 r14153 BAS21HT1/D BAS21HT1 PDF

    BBY55-02W

    Abstract: CT10 SCD80
    Contextual Info: BBY55-02W Silicon Tuning Diode  Excellent linearity  High Q hyperabrupt tuning diode 2  Low series inductance  Designed for low tuning voltage operation for VCO's in mobile communications equipment 1  Very low capacitance spread VES05991 Type Marking


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    BBY55-02W VES05991 SCD80 Jul-12-2001 Valuesl-12-2001 BBY55-02W CT10 SCD80 PDF

    Contextual Info: SDV708D Variable Capacitance Diode Variable Capacitance Diode Features and Benefits  Suitable for UHF band VCO  Low series resistance : rs=0.7 Typ. SOD-323 Ordering Information Part Number Marking Code Package Packaging SDV708D V8□ SOD-323 Tape & Reel


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    SDV708D OD-323 06-JAN-13 KSD-D6C034-000 PDF

    diode RA 225 R

    Abstract: MARKING CODE A1 SOT343
    Contextual Info: SIEMENS BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 o- N 2 -o EHAQ70G8 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-07W 62s


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    2-07W EHAQ70G8 2-07W Q62702-A1198 OT-343 diode RA 225 R MARKING CODE A1 SOT343 PDF

    marking 47s

    Contextual Info: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2


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    0-07W VPS05605 EHA07008 OT-343 EHB00040 EHB00041 Oct-07-1999 EHD07068 marking 47s PDF

    BAS40-07W

    Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4  General-purpose diode for high-speed switching  Circuit protection  Voltage clamping 2  High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -


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    BAS40-07W VPS05605 EHA07008 OT343 EHB00039 Aug-23-2001 EHB00038 BAS40-07W PDF

    transistor marking 47s

    Abstract: VPS05178 BAS40-07 A1 SOT143
    Contextual Info: BAS40-07 Silicon Schottky Diode 3  General-purpose diode for high-speed switching  Circuit protection 4  Voltage clamping  High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2


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    BAS40-07 VPS05178 EHA07008 OT143 EHB00039 EHB00040 EHB00041 Aug-23-2001 transistor marking 47s VPS05178 BAS40-07 A1 SOT143 PDF

    BB639C

    Abstract: v1010
    Contextual Info: BB639C Silicon Variable Capacitance Diode 2  For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB639C yellow S 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage


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    BB639C VPS05176 EHA07001 OD323 Jul-05-2001 BB639C v1010 PDF

    DIODE MARKING 541

    Abstract: marking H6 BBY66-02V SC79 VES05991 CT45
    Contextual Info: BBY66-02V Silicon Tuning Diode Preliminary data 2  High capacitance ratio  High Q hyperabrupt tuning diode  Designed for low tuning voltage operation 1 for VCO' s in mobile communications equipment VES05991  Very low capacitance spread Type BBY66-02V Marking


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    BBY66-02V VES05991 Jul-26-2001 DIODE MARKING 541 marking H6 BBY66-02V SC79 VES05991 CT45 PDF

    BB535

    Contextual Info: BB535 Silicon Variable Capacitance Diode 2  For UHF and TV / TR tuners 1  Large capacitance ratio, low series resistance VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB535 white S 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage


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    BB535 VPS05176 EHA07001 OD323 Jul-05-2001 BB535 PDF

    BBY66-05

    Contextual Info: BBY66-05 3 Silicon Tuning Diode  High capacitance ratio  High Q hyperabrupt tuning diode 2  Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1  Very low capacitance spread Type BBY66-05 Marking OBs Pin Configuration


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    BBY66-05 VPS05161 OT-23 Mar-08-2001 BBY66-05 PDF

    Q62702-B695

    Abstract: 639C
    Contextual Info: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage


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    Q62702-B695 OD-323 Apr-30-1998 20eries Q62702-B695 639C PDF

    Q62702-B683

    Contextual Info: BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 619C yellow S Q62702-B683 1=C SOD-123 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage


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    Q62702-B683 OD-123 Jan-08-1997 Q62702-B683 PDF

    E72873

    Abstract: VUB116-16NOXT
    Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product


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    116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT PDF

    Contextual Info: BB 639C Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639C yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage


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    VPS05176 EHA07001 OD-323 Oct-05-1999 PDF

    BAT62-07W

    Abstract: VPS05605
    Contextual Info: BAT62-07W Silicon Schottky Diode 3  Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62-07W 62s Pin Configuration 1=C1 2=C2 3=A2


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    BAT62-07W VPS05605 EHA07008 OT343 Jul-06-2001 BAT62-07W VPS05605 PDF

    Diode T148

    Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
    Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2


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    SC-74A) DTA144EKA) SC-59) 47kfl -100nA -10mA/-5mA 100ns Diode T148 transistor 667 transistor D 667 DTA144EKA T148 marking J1 PDF

    BB640

    Contextual Info: BB640 Silicon Variable Capacitance Diode 2  For Hyperband TV / VTR tuners, Bd I 1 VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB640 red S 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage R  5k


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    BB640 VPS05176 EHA07001 OD323 Jul-05-2001 EHD07045 BB640 PDF

    BB833

    Contextual Info: BB833 Silicon Tuning Diode 2  Extended frequency range up to 2.5 GHz; 1 special design for use in TV-sat indoor units  High capacitance ratio VPS05176 Type Marking Pin Configuration Package BB833 white X 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage


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    BB833 VPS05176 OD323 Jun-22-2001 /CT28 EHD07121 BB833 PDF