DIODE MARKING 3B Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking ya

Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Contextual Info: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH

Contextual Info: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol

Contextual Info: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel B A V 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° SOT-23 Ol Î - K 1 EHA07004 Maximum Ratings per Diode Valúes

RB461F

Abstract: 3B marking sot323 Diode Marking 3B Schottky Diode SOT Marking 3B sot323 marking K MARKING K SOT323
Contextual Info: BL Galaxy Electrical Production specification Schottky Barrier Diode RB461F FEATURES Pb z Small total capacitance. z Power dissipation. PD=150mW Lead-free APPLICATIONS z For general purpose applications. ORDERING INFORMATION Type No. SOT-323 Marking RB461F

marking 3b

Abstract: marking "3B"
Contextual Info: RB461F Schottky Diode SOT-323 1. ANODE 2. N,C 3. CATHODE Features — Low-power rectification — For switching power supply — — Ultra low VF. VF=0.45V Typ. at 0.7A - IF=0.7A guaranteed despite the size. Dimensions in inches and (millimeters) + MARKING: 3B•

Contextual Info: SIEMENS BB 837 Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C SOD-323

Contextual Info: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design

SC802-06

Abstract: OA 70 diode sc802 MARKING BH7
Contextual Info: SC802-06 1 .OA SCHOTTKY BARRIER DIODE • Outline Drawing 3*02 * m / II # 3 > 1 3 5 tQ4 gU _ +04 5.1-01 I Features C\J 04 U 5 !0 4 | | 12*«* -1 Marking • Surface mount device • 9 Lo w V f • Super high speed switching • High reliability by planer design

BB620

Abstract: diode marking code 77 marking 77 diode "Variable Capacitance Diode" marking 2x 2X marking
Contextual Info: I I DEVELOPMENT DATA • b b S 3 ^ 2 4 0 0 7 4 E b cl 3bD ■ SIC3 BB620 T h is d a t a s h e e t c o n t a in s a d v a n c e i n f o r m a t io n a n d s p e c if ic a t io n s a re s u b je c t t o c h a n g e w it h o u t n o t ic e . NAPC/PHILIPS SEMICOND

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

L3103L

Abstract: 0T1S IRF4905L
Contextual Info: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated

GS 069 LF

Contextual Info: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated

Contextual Info: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching

Contextual Info: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated

ice3b1565j

Abstract: 3b0365j ICE3BR2065 ICE3B0365J 3b0365 3b0565 ICE3BR2065J ice*3b0365j 3B1565 ICE3B2065J
Contextual Info: Da ta s h e et , V e rs io n 2. 6 , 4 J u l 2 0 1 1 I CE 3B0 365 J I CE 3B0 565 J I CE 3B1 565 J I CE 3B2 065 J O ff - L in e S M P S Cu r r e n t M o d e C o n tr o lle r wit h in t e g r a te d 6 5 0 V C o o lM OS ® a n d S ta r tu p c e ll fr e q u e n c y j itt e r M o d e in DI P- 8

DIODE CQ 618

Abstract: MOSFET IRL AN-994 IRL1104 IRL1104L IRL1104S marking dmx diode
Contextual Info: International 3BR Rectifier • • • • • • • PD'91840 IR L1104S /L PRELIMINARy HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175 °C Operating Temperature Fast Switching

Contextual Info: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: bSE ] International k Rectifier 4655452 0014bti2 3bcl H I N R PD-9.897 IRF530S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature

IRFZ48

Abstract: irfz48 n mosfet
Contextual Info: 4ÔS54S2 Q D l S a m International k? r Rectifier 3b5 PD-9.758 IIN R IRFZ48 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching

irfip448

Contextual Info: In t e r n a tio n a l IiorI R e c t i f ie r • 4055452 001534^ 3bG m i m p°-9-750 I R F I P 448 H EXFET Power M O SFET • • • • • • • INTERNATION AL R E C T I F I E R Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS ©