DIODE MARKING 33 Search Results
DIODE MARKING 33 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA |
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9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R |
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54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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DIODE MARKING 33 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR |
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LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel |
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LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape | |
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Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
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VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
VBUS05L1-DD1-G-08Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking |
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VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VBUS05L1-DD1-G-08 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE |
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LBAV99LT1G LBAV99LT3G | |
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Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking |
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VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating |
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LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape | |
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Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code |
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VBUS051BD-HD1 LLP1006-2L AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 | |
diode c02
Abstract: diode c23 MBK441 All smd diode marking bb202 smd marking code C23 SOD523 marking c2
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M3D319 BB202 BB202 SCA74 613514/01/pp8 diode c02 diode c23 MBK441 All smd diode marking smd marking code C23 SOD523 marking c2 | |
BAW101
Abstract: BFP181
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BAW101. BAW101 OT143 50/60Hz, BAW101 BFP181 | |
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Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-099R S8 Ordering Code |
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14-099R Q62702-A0042 14-099R OT-143 EHA07012 fl535bQ5 | |
VISHAY diode MARKING EGContextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package |
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VBUS051BD-HD1 LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 VISHAY diode MARKING EG | |
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Contextual Info: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0 |
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Q62702-A919 OT-23 023Sb05 235b05 015030b 535b05 | |
D1353
Abstract: marking Um diode 14-077S 330 marking diode
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14-077S Q62702-D1353 EHT09238 EHT09239 D1353 marking Um diode 14-077S 330 marking diode | |
BB639C
Abstract: v1010
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BB639C VPS05176 EHA07001 OD323 Jul-05-2001 BB639C v1010 | |
A1s sot23
Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
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Q62702-A688 OT-23 A1s sot23 SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode | |
free pdf transistor a7s
Abstract: A7S marking code a7s marking code sot 23 a7s diode A7s marking diode A7S sot-23 SOT-23 marking A7s A7s SOT23 marking A7s Q68000-A549
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Q68000-A549 OT-23 free pdf transistor a7s A7S marking code a7s marking code sot 23 a7s diode A7s marking diode A7S sot-23 SOT-23 marking A7s A7s SOT23 marking A7s Q68000-A549 | |
DIODE BAT 19
Abstract: Q62702-A1198
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2-07W VPS05605 Q62702-A1198 OT-343 Semicond8-11-01 Sep-07-1998 DIODE BAT 19 Q62702-A1198 | |
DIODE MARKING 541
Abstract: marking H6 BBY66-02V SC79 VES05991 CT45
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BBY66-02V VES05991 Jul-26-2001 DIODE MARKING 541 marking H6 BBY66-02V SC79 VES05991 CT45 | |
UBMS10BC
Abstract: marking ACs
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UBMS10BC OT-23 C-120 UBMS10BCRev 131102E UBMS10BC marking ACs | |
MARKING SO SOT23-6 VOLTAGE
Abstract: UBMS10BC
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UBMS10BC OT-23 C-120 UBMS10BCRev 131102E MARKING SO SOT23-6 VOLTAGE UBMS10BC | |
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Contextual Info: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22 |
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DDDD718 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- | |