DIODE MARKING 31B Search Results
DIODE MARKING 31B Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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DIODE MARKING 31B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
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500mwdodo-351n5221b1n5222b+16 | |
IRFH7911
Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
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7427airfh7911pbfirfh7911irfh7911trpbf+6 | |
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Contextual Info: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits |
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irfh7911pbf | |
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Contextual Info: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4253dpbf | |
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Contextual Info: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4251dpbf | |
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Contextual Info: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4251dpbf | |
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Contextual Info: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4253dpbf | |
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Contextual Info: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4251dpbf | |
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Contextual Info: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4253dpbf | |
IRFH7911TRPBFContextual Info: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters |
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97427dirfh7911pbfirfh7911trpbfirfh7911tr2pbf+3 | |
IRFH7911TRPBFContextual Info: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits |
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97427birfh7911pbfirfh7911trpbf | |
AN1152Contextual Info: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits |
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97427cirfh7911pbfirfh7911trpbfirfh7911tr2pbf+4 | |
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Contextual Info: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' * 1& 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters |
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97427dirfh7911pbfan-1152an-1136 | |
pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
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pt 4515mmpz5250b52b zenermmsz5259s+6 | |
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MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
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ot-23mmhz5270bptgp 52b diodemarking 24b sot-23+7 | |
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Contextual Info: FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4255dpbfcom/technical-info/appnotes/an-994 | |
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Contextual Info: FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications Control and Synchronous MOSFETs for synchronous buck converters |
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irfh4255dpbfan-994com/technical-info/appnotes/an-994 | |
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Contextual Info: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit |
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1n5913b1n5940b200ma1-jan-2006 | |
orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
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dl150/dmay-2001r14525dld601+10 | |
GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
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dl150/dmay-2001no422-3781r14525+10 | |
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Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie860df2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie822df2002/95/ec11-mar-11 | |
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Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie860df2002/95/ec11-mar-11 | |
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Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie860df2002/95/ec2011/65/eujs709a+1 | |