DIODE MARKING 0103 Search Results

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Contextual Info: • fl2 3 5 b05 01037titj 343 ■ SIEM ENS 1 -A H e x -H a lf-B rid g e / D o u b le S ix -D riv e r T L E 5 2 0 8 -6 G Overview Features • • • • • • • • • • • • • • Six High-Side and six Low-Side-Drivers Free configurable as switch, half-bridge or H-bridge

smd 2t1

Abstract: 1PS59SB10 marking code a2 SMD diode MLC358 A2 DIODE SMD CODE MARKING smd diode marking code a2 A11 MARKING CODE 5 1PS59SB15 1PS59SB14 1PS59SB15
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS59SB10 series PINNING • Low forward voltage 1PS59SB. PIN • Guard ring protected • Small SMD package. APPLICATIONS 10 14 15 16 1 a 2 n.c. ai k2 ai a2 ki k2 3 k

smd diode 106a

Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD

IEC 947-7-1 terminal block 400v

Abstract: din 46235 1064760000 M12-M16 1011120000 95 WDU Neozed 1027700000 gw 4007 1020500000
Contextual Info: W-series 2 W-series sets standards! When it comes to functional perfection even in details, Weidmüller’s W-series defines the market standards for many years now! The W-series comprises producte for conductor cross-sections between 1.5 and 300 mm2 which can be used for all important electrical applications connecting,

01-433-036

Abstract: eao 01-262.0252 01-262.0252 01273025 10-1116-1229 01.051.006 10-1112.1279 014-730
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 01 Switches and Indicators 01 Contents 01 Description . 3 Product Assembly . 4

JANTX1N5719

Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Contextual Info: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess

smd diode 106a

Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

D65019

Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Contextual Info: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100

ZTE MF 180 circuit

Abstract: 78017 ZTE 2 L18A L18B LP2982 MA05A TF010
Contextual Info: N a t i o n a l S e m i c o n d u c t o r September 1996 LP2982 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA, fixed-output voltage regulator de­ signed to provide ultra low dropout and lower noise in bat­

siba 90 058 05 500A

Abstract: LINDNER fuses SAKC10 SIBA FUSE FF varistor 05 k 575 0183360000 indicator fuse terminal SAKS1 SAK4 SL TERMINAL 100 0667520000 SAKR-35
Contextual Info: Modular feed-through terminals 2.5 mm2 SAKD 2.5/35 2.5 mm2 SAK 2.5 TS 35 / PA TS 35 / PA A When using ATEX certified components in hazardous area applications the installation instructions and the rated data for accessories in the technical appendix must be considered.

Contextual Info: UCC27223 SLUS558 − DECEMBER 2003 HIGHĆEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER WITH ENABLE FEATURES D Maximizes Efficiency by Minimizing D D D D D D D D APPLICATIONS D Multiphase Converters in Combination With Body-Diode Conduction and Reverse Recovery Losses

SLUP169

Contextual Info: UCC27221 UCC27222 SLUS486B − AUGUST 2001 − REVISED JULY 2003 HIGHĆEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER FEATURES D Maximizes Efficiency by Minimizing D D D D D D D APPLICATIONS D Non-Isolated Single or Multi-phased Body-Diode Conduction and Reverse

4410 mosfet

Abstract: LTC4410 IRLML6401 LTC4053 LTC4410ES6 usb flash drive 4410 "USB" peripheral
Contextual Info: Final Electrical Specifications LTC4410 USB Power Manager in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Manages Total Power Between a USB Peripheral and Battery Charger Minimal Voltage Drop 100mV at 500mA Ultralow Battery Drain: 1µA

BSB012N03LX3

Contextual Info: n-Channel Power MOSFET OptiMOS BSB012N03LX3 G Data Sheet 2.1, 2009-11-17 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012N03LX3 G 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: BSB012N03LX3 G OptiMOS 3 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 1.2 mΩ ID 180 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application

BSB012N03LX3

Abstract: JESD22
Contextual Info: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) MG-WDSON-2

LINDNER fuses

Abstract: diazed fuse d10 LINDNER Wickmann USA Electrical Fuse 3.6 KV, 315A Neozed weidmuller fuse sak 0456360000 M3X22 IEC 947-7-1 052766-000
Contextual Info: SAK-series 124 SAK-series Weidmüller terminal - SAK-series- are proved in millions of applications for more than 50 years. TS 32 TS 35 Thermosetting plastic or Thermoplastic Terminal of thermosetting plastic are normally used in applications where high continuous service temperature and high

Contextual Info: BSB012N03LX3 G TM OptiMOS 3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) MG-WDSON-2

01-131.022

Abstract: 10-1116-1229 0112102 014-630 01-273.025 2 10-1114.1249 014-730
Contextual Info: Switches and Indicators 01 01 Switches and Indicators Index Series 01 Description Page 15 Product Assembly Page 16 Product Range - pushbutton for standard mounting - accessories / spare parts 14 01.2000 Page 17 Page 19 Technical Data Page 25 Technical Drawing / Dimension / Layouts

BSB012N03LX3

Abstract: BSB012N03LX3 G
Contextual Info: BSB012N03LX3 G OptiMOS 3 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 1.2 mΩ ID 180 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application

Contextual Info: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

Contextual Info: SCANSTA112 www.ti.com SNLS161I – DECEMBER 2002 – REVISED APRIL 2013 SCANSTA112 7-Port Multidrop IEEE 1149.1 JTAG Multiplexer Check for Samples: SCANSTA112 FEATURES DESCRIPTION • The SCANSTA112 extends the IEEE Std. 1149.1 test bus into a multidrop test bus environment. The