DIODE MARKED T4 Search Results

Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.

PC410L

Abstract: PC410LENIP mark code t4 X3 diode PC410LEN E64380 transistor uxr phototransistor TIL 51 5911UG uxr transistor
Contextual Info: SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATIONFOR PHOTOCOUPLER. MODEL No. PC410L o Business dealing name PC410LENIP Business dealing name PC410LEYIP Specified for Enclosed please find copies of the Specifications which consists of 15 pages including cover.

Contextual Info: STK850 N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK STripFET™III MOSFET General features Type VDSS RDS on RDS(on)*Q g PTOT STK850 30V <0.0029Ω 58.8 nC*mΩ 5.2W • ULTRA LOW TOP AND BOTTOM JUNCTION TO CASE THERMAL RESISTANCE ■ VERY LOW CAPACITANCES

LTV817

Abstract: mark code t4 diode TB 1275 N DATA SHEET LTV817 photocoupler LTV817M-V LTV817S-V LTV817-V LTV827-V pc 817 LTV-817
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV817-V : 1-channel type / LTV827-V : 2-channel type /

LTV846S

Abstract: LTV846-V LTV-816 b 816 4pin 826m LTV816S LTV816S-V LTV826S-V LTV846 mark code t4 diode
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-816 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel type /

PC 814 photocoupler

Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /

PC123 VDE

Abstract: PC 123 photocoupler PC123 PC123 pin out PC123A PC123B PC123C PC123S PC123Y PC123Y5
Contextual Info: PREPARED BY: \ &&-‘/,L DATE: .%’2 , - :-, <’ ‘. h 4/ APPROVED - ,. BY: DATE: I- 1 -. ,dC, SHARP ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPEC. No. ED-94040E ISSUE March 5, 1998 PAGE 14 Pages REPRESENTAm A 1 lUi\1 I DMSION OPTO-ELECTRONIC DEVICES Dn!

LD128DN

Abstract: schematic diagram Electronic Ballast STLD128DNT4 stld128dn ld128 JESD97 STLD128DN-1 TRANSISTOR T4 ST
Contextual Info: STLD128DN High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Large RBSOA ■ Through hole TO-251 IPAK power package in

transistor MARKING K4

Contextual Info: STK850 N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK STripFET™ Power MOSFET General features Type VDSS RDS on RDS(on)*Q g PTOT STK850 30V <0.0029Ω 58.8 nC*mΩ 5.2W • ULTRA LOW TOP AND BOTTOM JUNCTION TO CASE THERMAL RESISTANCE ■ VERY LOW CAPACITANCES

MJD122

Abstract: JESD97 MJD122-1 MJD122T4 MJD127
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

Infineon Technologies Silicon Tuning Diode

Contextual Info: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W

Contextual Info: STK850 N-CHANNEL 30V - 0.0029 Ω - 30A - PolarPAK STripFET™ MOSFET PRELIMINARY DATA Package General features Type VDSS STK850 30 V RDS on RDS(on)*Q g <0.0035 Ω 85.75 nC*mΩ PTOT 5.2 W • TYPICAL RDS(on) = 0.0029 Ω ■ ULTRA LOW TOP AND BOTTOM JUNCTION

MJD122

Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

Contextual Info: STK800 N-CHANNEL 30V - 0.006 Ω - 20A - PolarPAK STripFET™ MOSFET PRELIMINARY DATA General features Type VDSS STK800 30 V RDS on Package RDS(on)*Qg <0.007 Ω 100.5 nC*mΩ PTOT 5.2 W • TYPICAL RDS(on) = 0.006 Ω ■ ULTRA LOW TOP AND BOTTOM JUNCTION

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

p55nf06l

Abstract: p55nf06 b55nf B55NF06L P55nf P55nf*06L P55nf*06 P55n
Contextual Info: STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFETTM II Power MOSFET General features Type VDSS RDS on ID STP55NF06L 60V <0.018Ω 55A STB55NF06L 60V <0.018Ω 55A STB55NF06L-1 60V <0.018Ω 55A • Exceptional dv/dt capability

BBY66

Abstract: BBY66-05 BBY66-05W BCR108W BCW66 E6327
Contextual Info: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W

CB417

Abstract: LVT3V3 sod6 cmos 3v3 SMLVT3V3 transil diode Transil
Contextual Info: LVT3V3 SMLVT3V3 /= T SGS-THOMSON * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -

STK800

Abstract: STK850 JESD97 K850
Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

STK80

Abstract: JESD97 K850 STK800 STK850
Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances