DIODE MARK B Search Results

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

RA code mark

Contextual Info: ADE-208-037D Z HVU351 Variable Capacitance Diode for VCO HITACHI Features Rev. 4 May. 1995 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Backage (URP) is suitable for surface mount design. Cathode mark Mark 1 EE Ordering Information

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

DSM3MA4

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band

HSU277

Abstract: Hitachi DSA00773 MARK A Package Code URP DIODE MARK 35
Contextual Info: ADE-208-018F Z HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch Rev. 5 Sep. 1995 Features Outline • Low forward resistance. (rf=0.7Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1

Hitachi DSA00772

Abstract: HSC276
Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

Hitachi DSA002789

Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM1MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark B Z F F 2 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

KDZ2.4EV

Abstract: KDZ10EV KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV~24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. ᴌNominal Voltage Tolerance About ᴦ6%. 1 A ᴌSmall Package : ESC E C B CATHODE MARK FEATURES 2

GP 836 DIODE

Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Contextual Info: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

RSX101M-30

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

KDZ10EV

Abstract: KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV KDZ24EV
Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C Sharp Breakdown Characteristic. 1 A Small Package : ESC B FEATURES E 2 MAXIMUM RATING Ta=25

zener 102

Abstract: zener diode 102 ZZ marking zener 103
Contextual Info: SEMICONDUCTOR KDZ7.5CF TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES CATHODE MARK Small Package : TFSC Normal Voltage Tolerance about 2% C 1 D 2 B A MAXIMUM RATING Ta=25 CHARACTERISTIC RATING

Contextual Info: SEMICONDUCTOR KDV375F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES ・Narrow terminal Capacitance deviation. CATHODE MARK ・Low Series Resistance. : rS=1.1Ω Max. 1 C 2 D ・Good C-V linearity.

DSM1MA2

Abstract: DSM1MA4
Contextual Info: GENERAL-USE RECTIFIER DIODE QSZ3E A Unit in mm rnch • * * OUTLINE DRAWING •-m m Direction of polarity k 3 . ■FEATURES • For general purpose. • High heat-resistant due to glass passivation. Type mark Lot mark Cathode band In in T-4 o w o -X 3 j

KDV1484E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1484E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING. FEATURES Small Package : ESC 1 A Low Series Resistance E C B CATHODE MARK High Capacitance Ratio 2 D MAXIMUM RATING Ta=25 CHARACTERISTIC

KDZ6.8DE

Contextual Info: SEMICONDUCTOR KDZ6.8DE TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Small package for portable electronics. Nominal Voltage Tolerance About 5%. Low leakage current. E C 1 A FEATURES B CATHODE MARK CONSTANT VOLTAGE REGULATION APPLICATION. 2 D F

Contextual Info: SEMICONDUCTOR KDZ2.0EV~33EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. A Sharp Breakdown Characteristic. 1 B Small Package : ESC E C CATHODE MARK FEATURES 2 D MAXIMUM RATING Ta=25