DIODE MARK B Search Results

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

Hitachi DSA002789

Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

KDZ10EV

Abstract: KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV KDZ24EV
Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C Sharp Breakdown Characteristic. 1 A Small Package : ESC B FEATURES E 2 MAXIMUM RATING Ta=25

KDV1484E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1484E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING. FEATURES Small Package : ESC 1 A Low Series Resistance E C B CATHODE MARK High Capacitance Ratio 2 D MAXIMUM RATING Ta=25 CHARACTERISTIC

KDZ6.8DE

Contextual Info: SEMICONDUCTOR KDZ6.8DE TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Small package for portable electronics. Nominal Voltage Tolerance About 5%. Low leakage current. E C 1 A FEATURES B CATHODE MARK CONSTANT VOLTAGE REGULATION APPLICATION. 2 D F

ADE-208-024C

Abstract: Zener Diode B1 9 zener diode 82 b3 HZU22B1 DIODE MARKING CODE B3 zener 3B2 B1 6 zener ZENER DIODE B3 Hitachi Semiconductor zener diodes hzu2.2btlf
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark I-

KDZ5.6CE

Abstract: ZM marking diode
Contextual Info: SEMICONDUCTOR KDZ5.6CE TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. Normal Voltage Tolerance about 2%. E C 1 A Small Package B CATHODE MARK FEATURES 2 D F MAXIMUM RATING Ta=25 CHARACTERISTIC Power Dissipation

Contextual Info: SEMICONDUCTOR KDV239E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. ・Small Package. ESC Package E C 1 A ・Ultra Low Series Resistance : rS=0.44Ω(Typ.) B CATHODE MARK FEATURES 2 MAXIMUM RATING (Ta=25℃)

ZENER DIODE KDZ100V

Abstract: ZENER DIODE 5K KDZ100V sharp - zener diode zener diode 7.6v DIODE MARKING 1M kdz100 diode z PAD DIMENSION zener diode z
Contextual Info: SEMICONDUCTOR KDZ100V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE A E L K 1 H F FEATURES G B CATHODE MARK CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER ・Small Package : USC 2 J D ・Sharp breakdown characteristic.

Contextual Info: SEMICONDUCTOR KDV310E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. ・Low Series Resistance : rs=1.1Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C2V/C25V=17.0(Min.) B CATHODE MARK FEATURES 2 D

Contextual Info: SEMICONDUCTOR KDZ2.0V~33V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J

BA 516 diode

Contextual Info: SEMICONDUCTOR KDV316E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. ・Low Series Resistance : rs=2.2Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C1V/C25V=9.0(Min.) B CATHODE MARK FEATURES 2 D

C25V

Abstract: KDV214E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A Max. E C B Low Series Resistance : rS=0.57 CATHODE MARK

36V zener

Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Contextual Info: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J

KDV348E

Contextual Info: SEMICONDUCTOR KDV348E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES C CATHODE MARK 1 A ・Small Package. E B ・Low Series Resistance : rS=0.50Ω Max. 2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC D SYMBOL RATING UNIT

TA7100P

Abstract: C25V KDV262E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A Low Series Resistance : rS=0.6 Typ. E C B CATHODE MARK

KDV365F

Contextual Info: SEMICONDUCTOR KDV365F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING Ta=25 CHARACTERISTIC RATING