DIODE MARK B Search Results

zener diode zg

Abstract: ZG zener E35A21VBR E35A21VBS
Contextual Info: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Contextual Info: Special Connectors Spark Suppressor Connectors Standard Type Housing AMP Trade Mark Dimple the lid is part of housing Part Number : 172006-1 Material : 66 Nylon, UL94V-2 rated, Natural \/ Diode Mark (indicates the direction ot place­ ment of diode and also

Contextual Info: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information

diode package DO214

Abstract: do-214 mark k5
Contextual Info: HRF302A-Silicon Schottky Barrier Diode for Rectifying Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Cathode mark Mark

Contextual Info: HSU88-Silicon Schottky Barrier Diode for CATV Converter Features Outline • Low capacitance. C=0.8pF max • Low forward voltage. • Ultra small Eesin package (URP) is suitable for surface mount design. Cathode mark ,-JZT Mark Ordering Information

MARK SD DIODE

Contextual Info: HSC276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features • • Outline High forward current, Low capacitance. Ultra small Flat Package UFP is suitable for surface mount design. Cathode mark Mark 1>=f LJ I Ordering Information

1021A1

Contextual Info: H S E 1 1 - GaAs Schottky Barrier Diode for SHF Mixer Features Outline • L o w noise GaAs schottky. • L ow capacitance. C =0.4pF max Ordering Information Type No. Mark Package Code HSE11 Cathode mark

Zener Diode B1 9

Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark

Contextual Info: HVC351-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35Q max • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark X M -n 1 C; x: * 13 2 Ordering Information Type No. L aser Mark

Contextual Info: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band

Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI Features Rev. 0 Nov. 1995 Outline • High forward current, Low capacitance. • Ultra small Flat package (UFP) is suitable for surface mount design. Cathode mark Mark

HVU356

Contextual Info: HVU356 -Variable Capacitance Diode for VCO of Demodulator in BS Tuner Features Outline • Low series resistance. rs=0.6i2 max • Ultra small Resin £ackage (URP) is suitable for surface mount design. Cathode mark I Mark 1 ,-E T

HSU277

Contextual Info: HSU277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance. r p O J ft max • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark ! Mark 1 Ordering Information

Contextual Info: HVU187-Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Features Outline • Low forward resistance. rp5.5Q max • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark "HT.- .,

Mark V6

Abstract: mark h2 diode
Contextual Info: HVU365-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin ¿Package URP is suitable for surface mount design. Cathode mark Mark — H2 Ordering Information

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

RA code mark

Contextual Info: ADE-208-037D Z HVU351 Variable Capacitance Diode for VCO HITACHI Features Rev. 4 May. 1995 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Backage (URP) is suitable for surface mount design. Cathode mark Mark 1 EE Ordering Information

Contextual Info: HVC359-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small B at Package UFP is suitable for surface mount design. Cathode mark ( Mark 1 1C 1- - - _

Contextual Info: HITACHI ADE-208-018F Z HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features Outline • Low forward resistance. (rp0.7£2 max) • IJltra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark Ordering Information

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

DSM3MA4

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band