DIODE MARK B Search Results

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

Hitachi DSA002789

Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

Contextual Info: SEMICONDUCTOR KDV310E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. ・Low Series Resistance : rs=1.1Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C2V/C25V=17.0(Min.) B CATHODE MARK FEATURES 2 D

Contextual Info: SEMICONDUCTOR KDZ2.0V~33V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J

TFSC

Contextual Info: KDZ7.5CF SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES o3 • Small Package : TFSC • Normal Voltage Tolerance about ± 2% CATHODE MARK - MAXIMUM RATING Ta=25°C CHARACTERISTIC

KDZ11VY

Abstract: KDZ16V-Y marking a2 diode usc
Contextual Info: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H F ・Nominal Voltage Tolerance About ±6%. 1 E ・Small Package : USC K CATHODE MARK FEATURES

Contextual Info: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode

microwave oven inverter

Abstract: ESJC33
Contextual Info: ESJC33-06 6.4kV/350mA Outline Drawings HIGH VOLTEGE DIODE Cathode Mark ESJC33 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. (2) Type Name, Lot No. Ø 7.5

Contextual Info: HVCA 2CL2FR 35kV 100mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2FR is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: HVCA 2CL2FK 10kV 100mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2FK is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: HVCA 2CL103 9kV 350mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL103 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

Contextual Info: HVCA 2CL2FM 20kV 100mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2FM is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: ESJC35-08 8.0kV/410mA HIGH VOLTAGE DIODE Outline ESJC35 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Drawings Cathode Mark Type Name, Lot No. Ø 4.0 Ø 0.78

Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

ESJA09-12

Abstract: high voltage CRT transformer ESJA09 ESJA09-10 10KV DIODE
Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: SEMICONDUCTOR KDV239 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. K L A H F ・Small Package. 1 E ・Ultra Low Series Resistance : rS=0.44Ω Typ. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃)

Contextual Info: HVCA HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: HVCA HV37-12F 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12F is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

high voltage CRT transformer

Abstract: crt flyback transformer esja08-08 ESJA08
Contextual Info: ESJA08 8kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min. Ultra high speed switching

diode t 4148

Abstract: diode 4148 SEMTECH ELECTRONICS 1n4148 T 4148 1N4148 Fast Switching Diode 4148 diode LL4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Cathode Mark Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC