DIODE MARK 35 Search Results

zener diode zg

Abstract: ZG zener E35A21VBR E35A21VBS
Contextual Info: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA

Zener Diode B1 9

Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark

Contextual Info: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information

Contextual Info: HSU88-Silicon Schottky Barrier Diode for CATV Converter Features Outline • Low capacitance. C=0.8pF max • Low forward voltage. • Ultra small Eesin package (URP) is suitable for surface mount design. Cathode mark ,-JZT Mark Ordering Information

MARK SD DIODE

Contextual Info: HSC276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features • • Outline High forward current, Low capacitance. Ultra small Flat Package UFP is suitable for surface mount design. Cathode mark Mark 1>=f LJ I Ordering Information

Contextual Info: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band

Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI Features Rev. 0 Nov. 1995 Outline • High forward current, Low capacitance. • Ultra small Flat package (UFP) is suitable for surface mount design. Cathode mark Mark

Contextual Info: SURGE SUPPRESSOR DIODE DAM2MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch 2.0 (0.08) B2 7 BN 3.6 (0.14) Type mark Lot mark Cathode band

HVU351

Contextual Info: ADE-208-037C Z HVU351 Variable Capacitance Diode for VCO Preliminary Rev. 3 May. 1993 HITACHI Features Outline • Low series resistance. (rs=0.35il max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark Mark , . . i _

Contextual Info: HVU308A-Variable Capacitance Diode for TV Tuner Features Outline • Low series resistance. r,=0.95il max • Ultra small Resin package (URP) is suitable for surface mount design. Cathode mark Mark t 1 • • 1 <.J 1 Ordering Information

HSU277

Contextual Info: HSU277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance. r p O J ft max • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark ! Mark 1 Ordering Information

DIODE WITH SOD CASE

Abstract: 1N4448 1N4448W IMBD4448 LL4448
Contextual Info: 1N4448 Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diode min. 1.083 27.5 ♦ Fast switching diode. ♦ This diode is also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-35 case styles including: the SOD-123

diode t 4148

Abstract: t 4148 diode diode 4148 1N4148-K 4148-K T 4148 LL4148 1n 4148 diode diode do35 C 4148 diode f 4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Cathode Mark Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

diode t 4148

Abstract: diode 4148 k 351 T 4148 LL4148 t 4148 diode 4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 Cathode Mark This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

diode t 4148

Abstract: diode 4148 SEMTECH ELECTRONICS 1n4148 T 4148 1N4148 Fast Switching Diode 4148 diode LL4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Cathode Mark Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

ADE-208-024C

Abstract: Zener Diode B1 9 zener diode 82 b3 HZU22B1 DIODE MARKING CODE B3 zener 3B2 B1 6 zener ZENER DIODE B3 Hitachi Semiconductor zener diodes hzu2.2btlf
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark I-

Contextual Info: HITACHI ADE-208-018F Z HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features Outline • Low forward resistance. (rp0.7£2 max) • IJltra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark Ordering Information

7B1 zener diode

Abstract: Zener Diode B1 9 zener 3B2 HZU3.3 HZU22B1
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Eesin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark Ordering Information

Contextual Info: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band

HSU277

Abstract: Hitachi DSA00773 MARK A Package Code URP DIODE MARK 35
Contextual Info: ADE-208-018F Z HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch Rev. 5 Sep. 1995 Features Outline • Low forward resistance. (rf=0.7Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1

Contextual Info: 1N914 SMALL SIGNAL DIODE DO-35 _ FEATURES_ ♦ Silicon Epitaxial Planar Diode ♦ For general purpose and switching. max. 0.079 2.0 -C a tho d e Mark _MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g .max. 0.020 (0.52)

Hitachi DSA00772

Abstract: HSC276
Contextual Info: ADE-208-421 Z HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

Hitachi DSA00775

Abstract: HVU308A series resistance mark code C2
Contextual Info: ADE-208-020A Z HVU308A Variable Capacitance Diode for TV tuner Preliminary Rev. 1 Apr. 1993 Features Outline • Low series resistance. (rs=0.95Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

Contextual Info: H ITACH I ADE-208-411 Z HVC308A Variable Capacitance Diode for TV tuner HITACHI Features Outline • Low series resistance. (rs=0.95£2 max) • Ultra small Flat Package (UFP) is suitable for surface mount design. « Cathode mark Mark » 1c Ordering Information