DIODE M3 Search Results

S3 DIODE schottky

Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

MARKING C SOD882

Abstract: nxp Standard Marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

MHC310

Abstract: MHC-310 ua720 SMD MARKING E1 BAT960 EIAJ C-3 marking code b9 MHC311
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability

SMD MARKING CODE s4

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAP64-05W Silicon PIN diode Product specification 2000 Jul 13 NXP Semiconductors Product specification Silicon PIN diode BAP64-05W FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

BAP70-03

Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

BAP64-05

Abstract: DIODE marking S4 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 NXP Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

BAS716

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

SMD F1 zener DIODE

Abstract: DIODE zener H5 SMD smd zener diode code k2
Contextual Info: Formosa MS SMD Zener Diode MMSZ5221 THRU MMSZ5267 List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Zener Diode MMSZ5221BS THRU MMSZ5267BS List List. 1 Package outline. 2

omap 2530

Abstract: thermocouple lm385 LM385A-2 RETS185H-2
Contextual Info: LM185-2.5,LM285-2.5,LM385-2.5 LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode Literature Number: SNVS743C LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description The LM185-2.5/LM285-2.5/LM385-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20

d 1667

Abstract: 1195 D1029N D2209N D660N D748N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 390 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

VS-40EPS12-M3

Abstract: VS-40EPS08-M3 VS-40EPS12
Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47

60EPS08PBF

Abstract: VS-60EPS12PBF
Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47

M3227

Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF30JC4 o u t lin e 40V 30A Feature • SM D ' SM D • filR=0.7mA 1 Low lR=0 .7mA • i» # î ê « b c u : < U 1 Resistance for thermal run-away • /J v 3 ü * * 3 i B 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

haw 25-p

Abstract: IRG4PC50KD IRG4PC50 91582 irg4p*50kd diode lt 247
Contextual Info: PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated

IRL3103

Abstract: IRL3103D2
Contextual Info: PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V

Contextual Info: HC FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE Standard type Amber sealed type Keep Latching relay With diode type HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the

IRG4PC50UDPBF

Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter