DIODE LX Search Results

lx2400

Abstract: LX2400ILG IEC61215 ul 1741 photovoltaic module 5w LX2400 Microsemi photovoltaic module ul 1741 download pv dc/ac solar pv inverter
Contextual Info: PRODUCT BRIEF LX2400 IDEALSolar Bypass Diode DESCRIPTION Solar Bypass Diode for Photovoltaic PV Modules with Industry’s Lowest Forward Voltage Drop and Lowest Operating Temperature The LX2400 IDEALSolarTM Bypass Diode with Microsemi’s patented CoolRUNTM technology provides a bypass path in PV

94v0

Abstract: ATO Diode ATO Shunt diode PIV 2000 ATO resistor DIODE 40c Specialty connector ul 94v0
Contextual Info: Specialty Products Special Products Specifications ATO Resistor Part Number: 02400100_ series ATO® Diode Part Number: 02400103_ Z = 1500 / LXN = 50 1 A Diode in ATO® size housing. The cathode connector is rotated 90° 1-A-Diode in ATO® -Größe mit 90°-abgewinkeltem

Photocathode

Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
Contextual Info: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm

Microsemi LX3055

Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Contextual Info: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and

5SYA2039

Abstract: 2000J170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 HiPak DIODE Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: DATA SHEET NEC PHOTO DIODE ELECTRON DEVICE PH310 PLASTIC MOLDED PIN PHOTO DIODE NEPOC SERIES DESCRIPTION PH310 is a photo diode w ith PIN structure. It has a wide ^ r î^ ll ; i:; ?; i; i:; ?; ?; ?; ?; ?Í i:>: photo-receiving area and high speed response enabling applica­

5SLD 0600J650100

Abstract: 0600J650100
Contextual Info: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

5SLD1000N330300

Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

4DSM

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-00 04-2011 5SLA 3600E170300 ABB HiPakTM, Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-01 11-2011 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

abb 630

Contextual Info: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLD 1200J450350

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-02 04-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

S 437 Diode

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-00 07-2011 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

AN-300

Abstract: LXA15T600
Contextual Info: LXA15T600 Qspeed Family 600 V, 15 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 15 600 120 4.6 0.45 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.

TOPSWITCH 242

Abstract: topswitch StackFET
Contextual Info: LXA08T600C Qspeed Family 600 V, 8 A X-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V

Contextual Info: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light

Contextual Info: LXA20T600 Qspeed Family 600 V, 20 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 20 600 140 5.0 0.4 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.