DIODE LT 54 Search Results

LT 33 diode

Abstract: 9 LT 05 Z Diode LT 45 LT/SG3527A
Contextual Info: DIODE LIM ITER SER IES LT 0.1-18 GHz GENERAL INFORMATION The LT series high speed D iode Lim iters receiver protectors are used at the input of sensitive receivers in order to protect them against acci­ dental burnout caused by high levels of CW or pulsed power. Most m o d­

LT 8233

Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

UHVP

Abstract: UC1625 application
Contextual Info: PRIORITY Lt t UIMITROOE UC1625 UC2625 UC3625 Brushless DC Motor Controller FEATURES DESCRIPTION Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode The UC1625 and UC3625 motor controller ICs integrate most of

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

a boost dc to ac inverter

Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high

TIC 44 SCR

Abstract: SCR TIC 44 MTO thyristor unial
Contextual Info: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule

MB11A02

Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
Contextual Info: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210

scs thyristor

Abstract: sgs Thomson Thyristor B090 MDS50 Diode LT 410 thyristor N 600 ch 14 thyristor t 250 n 1200
Contextual Info: Æ T S C S -TH O M S O N MDS50 DIODE / THYRISTOR MODULE FEATURES • V DRM = V r r m UP TO 1200 V ■ lT AV = 35 A . HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rm S ) DESCRIPTION The MDS50 family are constitued of one rectifier

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

thyristor tt 250 n 16

Abstract: thyristor TD 25 N ot 3000 DI 210 dt61n dt250n
Contextual Info: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,

ITT DIODE 210

Abstract: 81 210 W 20 TD92N ITT DIODE 128 dt61n dt250n IC 7476
Contextual Info: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,

LT 5247

Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Contextual Info: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V

diode 954

Abstract: 6BW8 4000 watts sound amplifier circuit diagram diagram 3 phase heater control pin diode limiter general electric
Contextual Info: 6BW8 ET-T1390 Page 1 9-54 DUPLEX-DIODE PENTODE TUBES DESCRIPTION AND RATING: BASING DIAG RAM T h e 6 B W 8 is a d u p le x -d io d e sh a rp -c u to ff p e n to d e in w h ic h sep a ra te ca th o d e s are p ro v id e d fo r th e d io d e a n d p e n to d e sections. T h e d io d e se ctio n s are

Melcher LT 1740

Abstract: LT1740 melcher LT 1740 melcher DC-DC Converters Melcher lt1740 "AC-DC Converters" AC-DC Battery Charger -Constant Current with volt S3 24A relais Melcher lt LT1000
Contextual Info: Rugged Environment AC-DC Converters >100 W 500 W AC-DC Converters T-Family T-Family Input to output Isolation Single output: L T 1000 • Universal AC input range • 54.5 V DC output voltage for 48 V loads • Battery charging with internal or remote temperature

Contextual Info: TC74VHCT540F/FW/FS TC74VHCT541 F/FW/FS OCTAL BUS BUFFER TC74VHCT540F / FW / FS TC74VHCT244F/FW /FS INVERTED. 3 - STATE OUTPUTS N O N - INVERTED. 3 - STATE OUTPUTS The TC74VHCT540, 541 are advanced high speed CMOS OCTAL BUS BUFFFERs fabricated with silicon gate C2MOS

lt1580

Abstract: LTC1267
Contextual Info: LT1580/LT 1580-2.5 u r m TECHNOLOGY 7A, Very Low D ro p o u t R egulator FCflTURCS DCSCRIPTIOn • Low Dropout, 540mV at 7A Output Current ■ Fast Transient Response ■ Remote Sense The L T 1580 is a 7A low dropout regulator designed to powerthe new generation of microprocessors. The drop­

LTC1267

Contextual Info: LT1580/LT 1580-2.5 7A, V e ry L o w D ro p o u t R e g u la to r L if m TECH N O LO G Y FCflTURCS DCSCRIPTIOn • Low Dropout, 540mV at 7A Output Current ■ Fast Transient Response ■ Remote Sense The L T 1580 is a 7A low dropout regulator designed to

7 SEGMENT DISPLAY 4511

Contextual Info: rZ Z Ä T# SGS T H O M S O N [» « L IO T to M Ü S M 54H C 4511 • M 74H C 4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER HIGH SPEED tpD = 28 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION lee = 4 nA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)

4511 bcd to 7 segment

Abstract: cmos 4511 pin diagram of ic 4511
Contextual Info: 5bE D • 7=^237 ÜDM0M3Ü S2G ■ SGTH T £rZ S C S -T H O M S O N KfflDlglSOIilLIigTrWRODIgi - s / - l y M 54H C 4511 M 74H C 4511 S G S-THOMSON BCD TO-7 SEGMENT LATCH/DECODER/DRIVER ■ HIGH SPEED tpo = 15 ns Typ at V cc = 5V ■ LOW POWER DISSIPATION

Contextual Info: H P ! * 't * » - • * « .1 w - ' t .» > PA85 •PA85A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-APE X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE — 450V • HIGH SLEW RATE — 1000V/|iS • HIGH OUTPUT CURRENT — 200mA

Contextual Info: a m p l if ie r s PA88 • PA88A APEX M IC R O TEC H N O LO G Y CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT

S1B02

Abstract: lts 542 2N6761
Contextual Info: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542

Contextual Info: PA09 •PA09A APEX MICROTECHINJOLOGY CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-5-46-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/^s PROTECTED OUTPUT STAGE — Thermal shutoff

19T8

Abstract: 19t8 tube 6T8-5T8-19T8 6T8 tube ET-T893 180J rs tube general electric
Contextual Info: |ftjb 6T8 5T8 19T8 6 T 8 -5 T 8 -1 9 T 8 ET-T893 TRIPLE-DIODE TRIODE Page 1 8-54 TUBES DESCRIPTION AND RATING1 The 6T8 is a m iniature triple-diode, high-mu triode intended primarily for use as a combined AM detector, F M detector, and audio-frequency voltage