DIODE LT 44 Search Results

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply

7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger

12v to 3.7v converter data sheet 2a

Abstract: ltc 3681 DE14MA 0.47mf 5.5v nec 24v active clamp forward converter 3.7v 1500mA battery Schottky diode low voltage g14 DIODE schottky marking ida sot-23 MARKING TRANSISTOR BD RC
Contextual Info: LT3681 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode U FEATURES DESCRIPTIO • The LT 3681 is an adjustable frequency 300kHz to 2.8MHz monolithic buck switching regulator that accepts input voltages up to 34V (36V maximum). A high efficiency

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

TIC 44 SCR

Abstract: SCR TIC 44 MTO thyristor unial
Contextual Info: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

IN4620

Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
Contextual Info: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV

Contextual Info: rrunm TECHNOLOGY LT1572 100kHz, 1.25A Sw itching R eg ulato r w ith C a tc h D iode F€fflUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1572 is a 1.25A 100kHz monolithic switching regulator with on-board switch and catch diode included in one package. It combines an LT1172 with a 1A Schottky

1 watt diode

Abstract: 8ac9 "Receiving Tubes" E12-70 diode 330
Contextual Info: S ylvan ia T ech nical M an u a l 44 nm n 6AC9 8AC9 C o lo r T e le v is io n T yp e IF AMPLIFIER PHASE DETECTOR G eneral Purpose Pentode and Double Diode C o n s t r u c t io n . C o m p a c tr o n T-9 B ase .B u tto n 12 P in , E12-70

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

AD107

Abstract: LTRW 300v vdr AD100 AD101 AD103 M AD102 AD103 AD110 AD111
Contextual Info: SCRs AD100-AD104 1.6 Amp, Planar AD114-AD118 AD107-AD111 FEA TU R ES • M axim um Gate Trigger C u rren t: 2, 20 or 200/iA • T ig h t G ate Trigger Voltage Range: .44 to ,6V • Voltage R ating s: to 400V • S p e cifie d fo r d v/d t and S w itch in g Tim e

schematic diagram UPS ica

Abstract: power mosfet 9505 sim welding diagram schematic diagram 24v UPS ic 4410 8pin inverter lg ig drive schematic diagram UPS ica ce 1200 full bridge igbt induction heating generator ups high power FET Transistor ic driver mosfet 8 pin 4413
Contextual Info: iUIXYS IX B D 4410 1XBD4411 IXBD4412 1XBD4413 ISOSMART HALF BRIDGE DRIVER CHIPSET* Features 1 2 0 0 V o r G r e a t e r L o w -to H ig h -S id e Is o latio n . 20ns D riv e s P o w e r S y s t e m s O p e r a tin g O n U p to 5 7 5 V A C S w itc h in g T im e w ith 1 0 ,0 0 0 p F L o a d .

Contextual Info: ANALOG DEVICES LC2M0S Precision Mini-DIP Analog Switch ADG417 FEATURES 44 V Supply Maximum Ratings V ss to V DD Analog Signal Range Low On Resistance <35 fl Ultralow Power Dissipation (<35 p.W) Fast Switching Times tow (145 ns max) t0FF (100 ns max) Break-Before-Make Switching Action

SE 2040

Abstract: SCR 400V 1000A
Contextual Info: 6 0 0 A Avg. 950 RMS Up to 800 Volts 20-40 fjs Fast Switching SCR T7SH 60 Inches Millimeters Symbol (f>D 4>D tpD2 , H <i>J J, Min. 1.850 1.140 1,760 Max. 1.900 1.180 1.850 Min. 45.72 28.96 44.70 Max. 48.26 29.97 46.99 .545 .135 .072 :605 .145 .082 13.84

Contextual Info: Preliminary SM2G300US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-BA

Contextual Info: Preliminary SMBH1G300US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Buck(Step Down) Converter

Contextual Info: Preliminary SMBL1G300US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Boost(Step Up) Converter

IEC 68-2-2 ba

Abstract: Ericsson TRU zener uz series
Contextual Info: ERICSSON COMPONENTS AB 44E J> 3373314 0005312 ISM M E R I C T - 2 5 "- Overvoltage protection of printed board assemblies Thyristor diode PNPN Type RKZ320301 Technical data 1. General The diode RKZ 320 301 consisting of a thyristor without control electrode, for use as a protection against transient

Contextual Info: • 44475A4 DDDTbTT Ô12 HH-IPA HEWLETT-PACKARD/ CMPNTS blE D Wha% HEWLETT PACKARD Low L oss B eam Lead PIN D iod es Technical Data HPND-4050 Features • Low S eries R esistan ce 1.3 £2 Typical • Low C ap acitan ce 0.07 pF Typical • F a s t S w itch in g

Melcher SR 30

Abstract: thyristor controlled lead acid battery charger LT3-L3 PV thyristor based battery charging MELCHER SWITCHING REGULATOR PSB 5A5 48V kW battery charger MELCHER psb 5a5 thyristor lead acid battery charging 3-Phase Full-Wave Bridge Rectifier L5A10
Contextual Info: Application Engineering Application Engineering 2.1 System Solutions 2 2 Customized Supplies 2-2 System Components 2-4 System Power 2-6 Battery Back-up 2-8 2.2 Rack Systems and Back Planes Rack Systems 2 - 11 Back Planes for the T-Family 2 - 12 2.3 Application Notes

DARLINGTON TRANSISTOR ARRAY

Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed

Contextual Info: SUPERTEX INC blE J> m Ô7732S5 0003440 34T * S T X HV70 S ^ u p e r t e x i n c . 34-Channel Symmetric Row Driver Ordering Information Package Options Device 44 J-Lead Quad Plastic Chip Carrier 44 J-Lead Quad Ceramic Chip Carrier Die in waffle pack 44 J-Lead Quad

Contextual Info: INTERFACE SELECTION GUIDE BY DEVICE NUMBER HLDTL-TTL Hex 12 to 20 0.0 0.0 0.4 120 380 TO-86 6A.9A 9112* TTL-HLDTL Hex 12 to 20 0.0 +V -2 .0 0.4 90 440 TO-86 6A.9A 95 9 5 * Dual ECL-TTL Translator +5.0 -5 .2 2.4 0.4 6.0 375 6B TTL-MOS Quad Clock Driver 15 to 21

sot 363 marking J IX

Contextual Info: W Â^ Ê H EW LETT ItfS l PACKARD Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSM S-280L/M/N/P/R HSMS-281L HSM S-282L/M/N/P/R Features • Surface Mount SOT-363 Package • Low Turn-On Voltage (A s Low as 0.34 V at 1 mA) • Low FIT (Failure in Tim e)