DIODE LT 350 Search Results

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply

7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger

Contextual Info: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase

CMLM0405

Abstract: CMLM0605 X10-4
Contextual Info: Central CMLM0405 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT LOW VCE SAT SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0405 is a single NPN Transistor and Schottky Diode packaged in a

MARKING CODE c25

Abstract: C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs CMLM0205 10V Schottky Diode
Contextual Info: Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode

TRANSISTOR C65

Abstract: marking c65 c65 schottky code c65 CMLM0405 CMLM0605 X10-4 small signal transistor marking codes
Contextual Info: Central CMLM0605 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT LOW VCE SAT SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0605 is a single PNP Transistor and Schottky Diode packaged in a

749022016

Abstract: 749022017 SMBJ58A
Contextual Info: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over

Step-up 12V to 36V 300mA

Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Contextual Info: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The

dsei 31-06c

Contextual Info: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • • • • • BY459-1500, BY459-1500S SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

Contextual Info: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode

ltg2

Abstract: LT3464ETS8
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

ltg2

Abstract: LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

marking m12 sot23

Abstract: M098 M05 SOT-23 SOT-23 marking code BS
Contextual Info: SM05 is D ^ J lT H C ^ K ] 300 Watt Surface Mount TVS Diode SM36 TEL: 805-498-2111 DESCRIPTION FEATURES: The SM series of transient voltage suppressors are designed to protect components which are connected to data and transmission lines from over voltages caused

1311 amplifier

Abstract: jfet photo diode LT1113 LT1169 LT1215 LT1311 LT1311CS TA03
Contextual Info: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode

lemc3225

Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Contextual Info: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

LT 8233

Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

22B27

Abstract: BZY95-C39 BZY95C18 BZY96-C6V8 BZY96 BZY95C10 BZY96C5V1 IN1765 BZY95-C10 BZY96-C5V1
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • & 137 &&^ BZY9S/BZY96/Z2 OOOOISI O B S L C B SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

BZY95C12

Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

Contextual Info: SE M IC O N D U C TO R B30A100VIC TECHN ICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER. APPLICATION. Lt D IM FEATURES • Fast Reverse Recovery Time • Low Peak Forward Voltage A H U SYMBOL RATING

a boost dc to ac inverter

Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high