DIODE LT 246 Search Results

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Royer resonant

Abstract: JMK212BJ106MM JMK212BJ226MM LTC3401 LTC3402 MBR0520L MSOP-10 FFT-617
Contextual Info: advertisement 3MHz Micropower Synchronous Boost Converters Deliver 3W from Two Cells in a Tiny MSOP Package – Design Note 246 Mark Jordan Portable electronic devices operating from one or more alkaline or nickel-metal-hydride cells require a boosted supply that is both small and efficient. Linear Technology’s

diode lt 246

Contextual Info: □IXYS Thyristor Modules Thyristor/Diode Modules MCC 225 ITRMS = 2 x 400 A •t a v m V v RRM V RSM VRRM V DSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS ^TAVM TVJ ~ Tc = 85°C; 180° sine N'SM» ^FSM TVJ = 45°C; VR= 0

Contextual Info: • International g«R]Rectifier MflSSMSS DDlbô3D MTS ■ INR INTERNATIONAL RECTIFIER bSE D SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability

TXS2S-24V

Abstract: TXS2S-L2-12V 311011D
Contextual Info: TX-S TESTING New pin layout LT type added. Ultra high sensitivity realized at 50 mW nominal operating power FEATURES 1. Nominal operating power: High sensitivity of 50 mW By using the highly efficient polar magnetic circuit “seesaw balance mechanism”, a nominal operating

DS_61022_EN_TXS

Abstract: relay 6v
Contextual Info: TX-S Very High Sensitivity, 50 mW nominal operating Relay with LT style pin layout FEATURES 1. Nominal operating power: High sensitivity of 50 mW By using the highly efficient polar magnetic circuit “seesaw balance mechanism”, a nominal operating power of 50 mW (minimum operating

40H00

Abstract: HPI-2464 HPI-2464R5 PI246
Contextual Info: Y Y ^_ " DETECTORS + PIN P H OT ODI OD ES HPI-2464,2464R5 H PI-2464, 2464R5&, * * ÿ< D t- K 7 t - ± x m O i' 'J 3 >PI N JFÎ7* DIMENSIONS (U nit:m m KT 'to 20(7) itH*i 1 ? - y 7 ± C J f M i n T l'îto HPI-2464, 2464R5 are silicon PIN photodiodes for auto­

TXS2-L-12V

Abstract: TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V TXS2-L2-12V TXS2-L2-24V TXS2-L-24V 6v 5 pin relay
Contextual Info: Products marked marked Products TX-S are discontinued discontinued as as of ofAugust August 31, 31, 2011 2011 are TESTING New pin layout LT type added. Ultra high sensitivity realized at 50 mW nominal operating power Products to be discontinued. FEATURES

diode lt 246

Contextual Info: Partly Order Discontinued as of August 31, 2011 TX-S TESTING New pin layout LT type added. Ultra high sensitivity realized at 50 mW nominal operating power Compliance with RoHS Directive FEATURES 1. Nominal operating power: High sensitivity of 50mW By using the highly efficient polar

diode lt 246

Abstract: LT 724 110v to 5v dc schematic relay 6v 5 pin TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V LT 236 diode TXS2-L2-12V
Contextual Info: TX-S TESTING New pin layout LT type added. Ultra high sensitivity realized at 50 mW nominal operating power FEATURES 1. Nominal operating power: High sensitivity of 50mW By using the highly efficient polar magnetic circuit “seesaw balance mechanism”, a nominal operating

TX2S-5V

Abstract: TX2-12V TX2S-12V TX2-L2-24V TX2-LT-12V TX2-3V TX2-LT-5V TX2-L2-5V tx-2s
Contextual Info: TX TESTING New pin layout LT type added. Best seller with broad lineup and AC 2000 V breakdown voltage. FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between

Contextual Info: Partly Order Discontinued as of August 31, 2011 TX TESTING New pin layout LT type added. Best seller with broad lineup and AC 2000 V breakdown voltage. Compliance with RoHS Directive FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil

Contextual Info: TX TESTING New pin layout LT type added. Best seller with broad lineup and AC 2000 V breakdown voltage. FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between

Contextual Info: TX Best seller with broad lineup and AC 2000 V breakdown voltage. FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between contact and coil, and 1,000 V between

DS_61022_EN_TX

Contextual Info: TX Best seller with broad lineup and AC 2000 V breakdown voltage. FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between contact and coil, and 1,000 V between

14511B

Abstract: display lt 313 mc14511b of mc14511b MC14511BCP
Contextual Info: MC14511B BCD−To−Seven Segment Latch/Decoder/Driver The MC14511B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4−bit storage latch, an 8421

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

UFN450

Abstract: UFN451 UFN453 GTO 100A 500V
Contextual Info: UNITRODE CORP TS 9347963 UN I T R O D E DE^I T 3 4 7 citi3 □ □ l ü b cm 7 CORP 92D |~ D 10690 POWER MOSFET TRANSISTORS UFN450 UFN451 UFN452 UFN453 500 Volt, 0.4 Ohm N-Channel T ' 3^/3 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling

1N5656A JANTX

Contextual Info: DIGITRON SEMICONDUCTORS 1N5629-1N5665 TRANSIENT ABSORPTION ZENER MAXIMUM RATINGS Operating and Storage Temperature -65 to +175°C DC Power Dissipation 1 watt @ TL ≤ 125°C, 3/8” from body Thermal Resistance 1500 watts for 10/1000 s with repetition rate of 0.01 @

LCBT67S

Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
Contextual Info: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.

thyristor BT 161

Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability

diodo zener 5v

Abstract: IN5815 IN5808 IN5809 diodo m1 63 diodo 72 diodo Lz 66 in5806 test leads IN5812 1N5663
Contextual Info: Zener Type No. Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im p ed a n ce Sp e cifie d N o S u ffix = 1 0 % S u ffix A = 5 % Power Rating 1,500 wat s Device Package 1N5663 1N5663A 1N5664 1N5664A 170.0

Contextual Info: r r u i m Æ Lm f LTC1152 . TECHNOLOGY Rail-to-Rail Input Rail-to-Rail O utput Zero-Drift Op Amp F€flTUR€S D6SCRIPTIOD • Input Common-Mode Range Includes Both Rails ■ Output Swings Rail to Rail ■ Output Will Drive 1k£2 Load The LTC 1152 is a high performance, low power zero-drift