DIODE LT 1A Search Results

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

6842S

Contextual Info: Surface Mounting Device Bridge Diode OUTLINE DIMENSIONS S1NB 800V 1A « f i L t C D S r ö E O L Y C I S , } £ E P tt« £ C !B 1 8 < f c 'Î U MMfàM RATINGS Absolute Maximum Ratings (üfé *v>ifrê-T/=25<C) m 1 Item Storage Temperature Operating Junction Temperature

LT-020

Contextual Info: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D1NJ10 U nit • mm Package I AX057 100V 1A 1-0 2 ^ - 1> n r) ^ 2 . 6 ±u • T jl5 0 ° C •;• • 5 mm fcf " j 3±o -M - • I S Ir = 0 .1 m A =i—hNo.4060 MIN27mm m ffitt

ic s1wb

Contextual Info: Dual In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S1WB A D/DB 600V 1A ■ R A T IN G S Absolute Maximum Ratings m a S ym b ol is # a s S to ra g e T e m p e ra tu re O p e ra tin g J u n c tio n T e m p e ra tu re -i±AsM ^M I± Average R ectified Forward C urre n t

S1001

Abstract: UES1001 UES1002 UES1003
Contextual Info: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES DESCRIPTION • Very Fast Recovery Times • Very Low Forward Voltage An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

FRM6756D

Abstract: FRM6756H FRM6756M FRM6756R 1E1A
Contextual Info: Radiation-Hardened MOSFETs FRM6756M, FRM6756D FRM6756R, FRM6756H File Number 2173 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 14 A, 100 V rDs(on) = 0.18 f i N-CHANNEL ENHANCEMENT MODE Features: • Linear transfer characteristics

2rx .jc .5h

Contextual Info: / TC74HC123AP/AF/AFN D U A L R E T R I G G E R A B L E MONOSTABLE M U L T IV IB R A T O R T h e T C 7 4 H C 1 2 3 A is a h ig h speed C M O S M O N O S T A B L E M U L T IV IB R A T O R fa b r ic a te d w ith s ilic o n g a te C ! M O S te c h n o lo g y .

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

TXS2S-24V

Abstract: TXS2S-L2-12V 311011D
Contextual Info: TX-S TESTING New pin layout LT type added. Ultra high sensitivity realized at 50 mW nominal operating power FEATURES 1. Nominal operating power: High sensitivity of 50 mW By using the highly efficient polar magnetic circuit “seesaw balance mechanism”, a nominal operating

Contextual Info: TOSHIBA LOGIC/MEMORY TC74HC423P/F r - 5 M ^ TC74HC423P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC423 i s a h ig h sp e ed CMOS MONOSTABLE MULTIVIBRATOR f a b r i c a t e d w ith s i l i c o n g a te C^MOS te c h n o lo g y . I t a c h ie v e s t h e h ig h sp e ed o p e r a t io n s i m i l a r t o e q u iv a le n t

LTC3528-2

Abstract: LTC3528B-2 056 QFN16 LTC3528BE-2 MSS5131 ZC2811E 3528b2f
Contextual Info: LTC3528B-2 1A, 2MHz Synchronous Step-Up DC/DC Converter in 2mm x 3mm DFN FEATURES DESCRIPTION Delivers 3.3V at 200mA from a Single Alkaline/ NiMH Cell or 3.3V at 400mA from Two Cells n V Start-Up Voltage: 700mV IN n 0.50V to 5.5V Input Range n 1.6V to 5.25V V

Contextual Info: LT3504 Quad 40V/1A Step-Down Switching Regulator with 100% Duty Cycle Operation DESCRIPTION FEATURES n n n n n n n n n n n n n Wide Input Range: 3.2V to 40V Four 1A Outputs 100% Duty Cycle Operation Resistor-Programmed Constant Frequency Short-Circuit Robust

Contextual Info: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive

Contextual Info: • International HU Rectifier 4ÔSSMS5 0 0 1 b 7 4 7 INTERNATIONAL ölß RECTIFIER ■ INR bSE SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F ast re c o v e ry d io d e H igh s u rg e c a p a b ility

Contextual Info: r r u v _ LT1374 m TECHNOLOGY 4.5A, 500kHz S tep-D ow n S w itching R e gu lator K O T U IK S D C S C R IP T IO n • Constant 500kHz Switching Frequency ■ Easily Synchronizable ■ Uses All Surface Mount Components ■ Inductor Size Reduced to 1.8|aH

LTC3300

Abstract: LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors
Contextual Info: January 2012 I N T H I S I S S U E integer-N synthesizer with integrated VCO in a 4mm x 5mm package 9 supercapacitor-based power supply ride-through system 15 ultralow-EMI, µModule Volume 21 Number 4 Dual Output DC/DC Controller Combines Digital Power System

transistor c570

Contextual Info: LT1086 Series u r m TECHNOLOGY 1.5A Low D ropout Positive Regulators A djustable a n d Fixed 2.85V, 5V, 12V D€SCRIPTIOn F€flTUR€S Three Terminal Adjustable or Fixed 2.85V Active SCSI Termination , 5V, 12V Output Current of 1.5A, (0.5A for LT1086H) Operates Down to 1V Dropout

4n137

Abstract: ic 7474 pin diagram CAC02 series full bridge inverter 500khz square wave ttl 7474 sine wave AD654 IC Timer Cookbook circuit diagram 4-20ma RECEIVER AD595 IC PIN LAYOUT CORNING CAC02
Contextual Info: ► ANALOG DEVICES AN-278 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Operation and Applications of the AD654IC V-to-F Converter* by Walt Jung INTRODUCTION + VS DEVICE DESCRIPTION The AD654 is a monolithic voltage-to-frequency V/F con­

Contextual Info: □IXYS MCO 600 High Power Single Thyristor Module Itrms - 928 lTAV = 600 A VRRM = 2000-2200 V Preliminary data M M RSM T RRM V DSM VDRM V V 2100 2300 2000 2200 3 Test Conditions Itrm s Tvj - TVJM Tc = 85°C; 180° sine I tsm l2t di/dt cr Maximum Ratings

Contextual Info: L i r m TECHNOLOGY u n 7 0 / L T ll 7 1 / U ll 7 2 100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators F€RTUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1170, LT1171, and LT1172 are monolithic high power switching regulators. They can be operated in all

Contextual Info: L I I lk _ / M C TECHNOLOGY LTC1293/LTC1294/LTC1296 Single Chip 12-Bit D ata Acquisition System F€flTUR€S D C S C M P T IO n • S o ftw a re P ro g ra m m a b le Features U n ip o la r/B ip o la r C o nversio n D ifferen tial/S in g le Ended Inp uts M SB -First or M S B /LS B Data Sequence

Contextual Info: um TECHNOLOGY _ LT 1001 Precision O perational Amplifier F€flTUR€S D € S C R IP T IO n • Guaranteed Low Offset Voltage LT1001AM 15/xV max LT1001C 60juV max ■ Guaranteed Low Drift The LT1001 significantly advances the state-of-theart of precision operational amplifiers. In the design,

a1 diode 90244

Abstract: 78058 regulator ir 90244 diode
Contextual Info: X T L in ^A B TECHNOLOGY K fflU IK S • High Efficiency: Up to 93% ■ Constant Frequency Adaptive Power Operation ■ Input Voltage Range: 3V to 13.5V ■ Internal 0.6Q Power Switch Vin = 10V ■ Low Dropout Operation: 100% Duty Cycle ■ Low-Battery Detector