DIODE LASER 3 PIN Search Results

IR-Laser-Diode

Abstract: laser diode 30mw ir laser IR Laser diode 300 mw IR Laser Diode laser diode symbols 6 pin laser diode 2 pin ir DIODE US-Lasers
Contextual Info: US-Lasers: 850nm-30mW - IR LASER DIODE and IR DIODE LASER MODULE Page 1 of 2 US-Lasers: 850nm-30mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z 3/8 - 56 Thread Size Dia: 10.4mm

780nm laser diode 8 mW

Abstract: 780nm laser diode 780nm laser diode module laser diode 780 nm
Contextual Info: US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size

780nm 5MW infrared laser

Abstract: 780nm-5mW 780nm laser diode 8 mW 780nm 5MW infrared laser diodes
Contextual Info: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back to Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size

laser diode module 820 nm

Abstract: 808nm laser diode 808nm
Contextual Info: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size

diode Marking code v3

Abstract: ,diode Marking code v3 marking code diode V3 SLD202U SLD202U-3 SLD202V-3 820 nm laser diode
Contextual Info: SLD202U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description SLD202U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U-3 M-221 SLD202V-3 M-248 Features High power laser diode with the excellent general

SLD201V-3

Abstract: diode Marking code v3 SLD201V3 ,diode Marking code v3 SLD201U-3
Contextual Info: SLD201U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U-3 M-221 SLD201V-3 M-248 Features High power laser diode with the excellent general

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

MARK A0X

Abstract: SLD20 SLD202U-3 SLD202V-3
Contextual Info: SLD202U-3/V-3 SONY, 50mW High Power Laser Diode Description U n it: mm Package O utline S LD 202U -3/V -3 is a gain-guided highpow er laser diode fabricated by MOCVD. Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero laser diode.

Contextual Info: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

DAiode

Abstract: PIN Photodiode side look
Contextual Info: TO SHIBA TOLD9231M TO SHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

EL6211

Abstract: EL6211CU EL6211CU-T13 EL6211CU-T7 MDP0040
Contextual Info: EL6211 Data Sheet June 14, 2004 3-Channel Laser Diode Driver + Oscillator Features The EL6211 is a three-channel laser diode current amplifier that provides controlled current to a grounded laser diode. Channels 2 and 3 should be used as the write channels, with switching speeds of less than two

amd FX PIN LAYOUT

Abstract: G701
Contextual Info: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

DL-3149-054

Contextual Info: Ordering number : EN5867 Red Laser Diode D L -3 149-054 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current and high operating temperature. The low threshold

670NM Laser-Diode

Abstract: DL-3148-033
Contextual Info: Ordering number : EN5860 Red Laser Diode D L -3 148-033 Index Guided AIGalnP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold

Contextual Info: SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

1000mW laser

Abstract: SLD304B
Contextual Info: SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

TOLD9442M

Abstract: laser diode toshiba 650
Contextual Info: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: TOLD9231M 670NM Laser-Diode told daiode
Contextual Info: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

diode block 805

Abstract: C6802 IEC60825-1 SLD304B 15c diode
Contextual Info: SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

MDP0040

Abstract: EL6216 EL6216CU EL6216CU-T13 EL6216CU-T7
Contextual Info: EL6216 Data Sheet June 16, 2004 FN7224 3-Channel Laser Diode Driver + Oscillator Features The EL6216 is a high-performance three channel laser driver that provides controlled current to a grounded laser diode. Write channels 2 and 3 should be used as the write

laser diode toshiba

Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Contextual Info: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Contextual Info: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: Preliminary Data Sheet NX6314EH LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS R08DS0054EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6314EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

C6802

Abstract: IEC60825-1 SLD301B
Contextual Info: SLD301B Block-type 100mW High Power Laser Diode Description The SLD301B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. M-261