DAIODE Search Results

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: T O SH IB A TOLD9231M TOSHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10—60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

TOLD9442M

Abstract: laser diode toshiba 650
Contextual Info: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: TOSHIBA TOLD9441 MD TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 0 3 V/ LD ^ (5Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

DAiode

Abstract: PIN Photodiode side look
Contextual Info: TO SHIBA TOLD9231M TO SHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

laser diode toshiba

Abstract: 650nm 5mw 5v laser 2 Wavelength Laser Diode 650NM laser diode 5mw laser diode toshiba 650 TOLD9441MC
Contextual Info: TOLD9441 MC TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Contextual Info: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Contextual Info: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

DAiode

Abstract: laser diode toshiba
Contextual Info: TOSHIBA TOLD9462MD : :_ TOSHIBA LASER DAIODE TOLD9462MD InGaAlP LD Light Source for DVD Application À p = 6 50n m t y p . Lasing Wavelength Optical Output Power :P o =7m W Operai icn Case Temperature : T c = —10~ 7 0 °C PIN CONNECTION io

laser diode toshiba

Contextual Info: lU btllbA TOLD9462MC TOSHIBA LASER DAIODE KL CAÍ TOLD9462MC InGaAIP LD Light Source for DVD Application Unite in : mn Lasing Wavelength : A p = 6 50nm t y p . Optical Oitput Power : Po=7mW Operation Case Temperature : T c = —10~70°C PIN CONNECTION

Contextual Info: T O SH IB A TOLD9441 M C TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power :P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 1. LASER DIODE ANODE O¿ j, uT An uCi T^ ?iÜv TYITfcTVI?

laser diode toshiba

Abstract: 2 Wavelength Laser Diode 650nm 50mw 12 pin laser
Contextual Info: TOLD9441 MC TOSHIBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

Contextual Info: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

laser diode toshiba

Abstract: TOLD9221M 670NM Laser-Diode DAiode
Contextual Info: TOLD9221M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

DAiode

Abstract: 650nm 50mw
Contextual Info: TO SHIBA TOLD9441 M C TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 LD 0 3 V/ 0Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

Contextual Info: TOLD9441 MD T O SH IB A TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power :P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 1. LASER DIODE ANODE O¿ j, uT An uCi T^ ?iÜv TYITfcTVI?

laser diode toshiba

Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
Contextual Info: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650
Contextual Info: TOLD9441 MD TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: TOLD9231M 670NM Laser-Diode told daiode
Contextual Info: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U2 Dimensions Unit : mm Structure Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).

Contextual Info: 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).

Contextual Info: Data Sheet 1.5V Drive Pch +SBD MOSFET TT8U2  Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8  Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance.

ip611

Contextual Info: D 9 5 Q -C O R E Preliminary Specification January 1995 This is Preliminary Data from SGS-THOMSON. Details are subject to change without notice. USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORISED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES