DIODE KP Search Results
DIODE KP Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE KP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004 | |
Contextual Info: DIODE MODULE PD100GB/KP100GB_ UL;E76102 M Power Diode Module DD1 OOGB series are designed for various rectifier circuits. DD 1 OOGB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V |
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PD100GB/KP100GB_ E76102 DD100GB-40 DDIOOGB-80 B-106 | |
Contextual Info: Paper Sensor KPS1001C- □ Description The KPS1001C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation |
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KPS1001C- KPS1001C 21-JAN-11 KSD-XXXXXX-000 KPS1001C-T | |
Contextual Info: Paper Sensor KPS1004C- □ Description The KPS1004C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation |
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KPS1004C- KPS1004C 21-JAN-11 KSD-XXXXXX-000 KPS1004C-T | |
KPS1005C-T
Abstract: KPS1005C-
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KPS1005C- KPS1005C 21-JAN-11 KSD-XXXXXX-000 KPS1005C-T KPS1005C-T KPS1005C- | |
Contextual Info: Paper Sensor KPS1002C- □ Description The KPS1002C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation |
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KPS1002C- KPS1002C 21-JAN-11 KSD-XXXXXX-000 KPS1002C-T | |
Contextual Info: Paper Sensor KPS1003C- □ Description The KPS1003C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation |
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KPS1003C- KPS1003C 21-JAN-11 KSD-XXXXXX-000 KPS1003C-T | |
NEC SCR
Abstract: NDL3210S 7668 L3210S
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NDL3210S NDL3210S IEI-1209) NEC SCR 7668 L3210S | |
LTC4098-3.6Contextual Info: 5 KP6,5.5 KP110CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter - @ 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode |
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KP110CA KP110CA LTC4098-3.6 | |
20B3 diode
Abstract: thermistor 1812
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LB5374 LB5374 14-pin 1180nH 20B3 diode thermistor 1812 | |
paper sensor
Abstract: Kodenshi light emitting and detecting sensor KPS1008C 1235mA
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KPS1008C KPS1008C paper sensor Kodenshi light emitting and detecting sensor 1235mA | |
KPS-100
Abstract: paper sensor KPS1006C
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KPS1006C KPS1006C KPS-100 paper sensor | |
Contextual Info: Paper Sensor KPS1007C Description The KPS1007C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side. |
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KPS1007C KPS1007C 21-JAN-11 KSD-XXXXXX-000 | |
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Contextual Info: Paper Sensor KPS1006C Description The KPS1006C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side. |
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KPS1006C KPS1006C 21-JAN-11 KSD-XXXXXX-000 | |
paper sensor
Abstract: KPS-100 KPS1003C photo switch lds sensor
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KPS1003C KPS1003C paper sensor KPS-100 photo switch lds sensor | |
KPS1007C
Abstract: paper sensor KPS-100 photo sensor IC
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KPS1007C KPS1007C paper sensor KPS-100 photo sensor IC | |
germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
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I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector | |
thyristor BBC
Abstract: thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor
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CH-5401 D-6800 D-6840 thyristor BBC thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor | |
Contextual Info: SONY SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure*2. |
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SLD322XT SLD300 SS-00259, SLD322XT SS00259 net/Sonylnfo/procurementinfo/ss00259/ M-273 LO-10) M-273 | |
Contextual Info: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light |
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S10108, S10109 S10108 S10109 S10108: S10109) B1201, KPIC1066E02 | |
GP 836 DIODE
Abstract: HP 3379 gp 728 diode marking 3507 diode marking 3fv DIODE 3FV 60 DIODE y 12 9p marking KDZ3.6FV 3fv 60
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KDZ36FV KDZ10FV KDZ11FV KDZ12FV KDZ13FV KDZ15FV KDZ16FV KDZ18FV KDV36VV GP 836 DIODE HP 3379 gp 728 diode marking 3507 diode marking 3fv DIODE 3FV 60 DIODE y 12 9p marking KDZ3.6FV 3fv 60 | |
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
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P781
Abstract: P7816 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA
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P7816 P7816 SE-171 KPC1005E01 P781 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA |