DIODE KO 4 50 Search Results

UC 8447

Abstract: Rubycon zl BOOT ENB TSET GND FB VBIAS LX VIN
Contextual Info: 8447 Hi Voltage Step Down Regulator FEATURES n 8-50V Input Range n Integrated DMOS Switch n Adjustable Fixed off-time n Highly Efficient n Adjustable 0.8-24V output The A8447 is a step down regulator that will handle a wide input operating voltage range. The A8447 is supplied in a low profile 8 lead SOIC with

transistor BD 512

Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­

Contextual Info: IRFH8318PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 3.1 (@VGS = 10V) (@VGS = 4.5V) 4.6 Qg typ 19 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted

SMP1321

Abstract: SMP1321-005 SMP1321-074 SMP1321-508
Contextual Info: DATA SHEET SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes Applications • High-performance wireless switches  WLAN 802.11 a/b/g systems SMP1321-508 Features  Capacitance: 0.25 pF  Packages rated MSL1, 260 C per JEDEC J-STD-020

SOT23L-6

Abstract: SOT23L
Contextual Info: TO KO INTEGRATED C IR C U ITS DC-DC converter ICs Yi DC-DC 3 50 •BbâEâfe —-S? 1C Features • Low voltage operation. 0.6V- • variable output 1.5-15V • B u ilt-in re ctifie r diode. • Small package (SOT23L-6) TK11812M (0.6V ~ ) 1.5V ~ 15V mm#*-

74V2G00

Abstract: 74V2G132 74V2G132CTR 74V2G132STR
Contextual Info: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V

Contextual Info: U7006B DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

APM3006N

Abstract: APM3006NU APM3006 STD-020C
Contextual Info: APM3006NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.8mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2800B

Abstract: STD-020C SOT-23-5 MARKING VF
Contextual Info: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)

diode marking code 7

Abstract: A102 APM2505N APM2505NU STD-020C
Contextual Info: APM2505NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =4mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

USD745C

Abstract: Schottky Rectifiers USD740C USD735C USD750C RSJC IFSM200A IFSM200
Contextual Info: USD735C USD740C USD745C USD750C DUAL POWER SCHOTTKY RECTIFIERS 16A Av, up to 50V DESCRIPTION The USD700C series o f power Schottky rectifiers, in the industry standard TO-220 package, is specifically designed for operation in power sw itching c irc u its to

Contextual Info: U7006B DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

APM2050N

Abstract: apm*2050n APM2050NU STD-020C
Contextual Info: APM2050NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/18A, RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=30mΩ (typ.) @ VGS=4.5V G D RDS(ON)=50mΩ (typ.) @ VGS=2.5V • • • S Super High Dense Cell Design Top View of TO-252 Reliable and Rugged

M77X

Abstract: APM2677C APM2677 STD-020C sot-23-6 Marking Information
Contextual Info: APM2677C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-5A, RDS ON =28mΩ (typ.) @ VGS=-4.5V RDS(ON)=36mΩ (typ.) @ VGS=-2.5V RDS(ON)=50mΩ (typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Top View of SOT-23-6 Reliable and Rugged

A102

Abstract: APM3005N APM3005NU STD-020C
Contextual Info: APM3005NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.5mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • • G Super High Dense Cell Design D S Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

APM2050N

Abstract: APM2050 APM2050ND STD-020C apm*2050n
Contextual Info: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(typ.) @ VGS=10V RDS(ON)=30mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=2.5V • • • Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged

APM4431

Abstract: APM4431K STD-020C
Contextual Info: APM4431K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-5.3A , RDS ON =32mΩ (typ.) @ VGS=-10V RDS(ON)=50mΩ (typ.) @ VGS=-4.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package (1, 2, 3)

transistor d 13007

Abstract: 14723 temic
Contextual Info: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

APM2071

Abstract: sot-89 MARKING CODE 4A APM2071PD APM2071P STD-020C apm*2071 marking code IR SOT89
Contextual Info: APM2071PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-4A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=75mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

MARKING TR SOT23-3 P MOSFET

Abstract: APM2324AA mosfet marking code a24x APM2324A STD-020C
Contextual Info: APM2324AA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A, RDS ON = 50mΩ(typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(typ.) @ VGS= 2.5V RDS(ON)= 120mΩ(typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged

apm2070

Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2802CG

Abstract: APM2802 STD-020C
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • C 20V/3A, RDS ON =50mΩ(typ.) @ VGS=4.5V G S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

Contextual Info: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0