DIODE KO 4 50 Search Results

smda15c

Abstract: marking sdk SMDB15
Contextual Info: fl SMDA03 PROlEK DEVICES iR i^i/vïe for + -Ko t-n onoiani" onvyirw ime Engineered solutions the transient environment thru SMDB24C TVS DIODE ARRAY APPLICATIONS • • • • • IEC 1000-4 COMPATIBLE RS-232, RS-422 & RS-423 Data Lines Cellular Phones Audio/ Video Inputs

UC 8447

Abstract: Rubycon zl BOOT ENB TSET GND FB VBIAS LX VIN
Contextual Info: 8447 Hi Voltage Step Down Regulator FEATURES n 8-50V Input Range n Integrated DMOS Switch n Adjustable Fixed off-time n Highly Efficient n Adjustable 0.8-24V output The A8447 is a step down regulator that will handle a wide input operating voltage range. The A8447 is supplied in a low profile 8 lead SOIC with

transistor BD 512

Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­

tc9406f

Abstract: TC9405F GV 475 diode pine kd TA2066F TA2066FN TC9296AF
Contextual Info: TO SH IBA TA2066F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2066F, TA2066FN RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM TA2066F/FN is a 3-beam type PUH compatible RF Am plifier to be used in the CD system. In combination with a CMOS single chip processor

tc9405f

Abstract: tc9406f pine kd TA2066F TA2066FN TC9296AF 3-beam system diode kO 4 50 TC9405F/TC9406F
Contextual Info: TO SH IBA TA2066F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2066F, TA2066FN RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM TA2066F/FN is a 3-beam type PUH compatible RF Am plifier to be used in the CD system. In combination with a CMOS single chip processor

diode dgp 30

Abstract: schematics for a PA amplifier schematics for a PA amplifier class c U7006B U7006B-MLB U7006B-MLBG3
Contextual Info: Tem ic U7006B Semiconductors DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-0 matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

AC Transformer 50A 100V

Contextual Info: IRLH7134PbF HEXFET Power MOSFET VDS 40 V RDS on max 3.3 mΩ 39 nC (@VGS = 10V) Qg (typical) ID 50 (@Tc(Bottom) = 25°C) i A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

Contextual Info: IRFH8318PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 3.1 (@VGS = 10V) (@VGS = 4.5V) 4.6 Qg typ 19 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted

SMP1321

Abstract: SMP1321-005 SMP1321-074 SMP1321-508
Contextual Info: DATA SHEET SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes Applications • High-performance wireless switches  WLAN 802.11 a/b/g systems SMP1321-508 Features  Capacitance: 0.25 pF  Packages rated MSL1, 260 C per JEDEC J-STD-020

D 13007 K

Abstract: schematics for a PA amplifier U7004B 13007 TRANSISTOR D 13007 T 13007 U7004B-MFS U7004B-MFSG3 class h power amplifier hi power schematic
Contextual Info: Temic U7004B S e m i c o n d u c t o r s DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-0 matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

Contextual Info: IRFH7110PbF HEXFET Power MOSFET VDS Vgs max RDS on max (@VGS = 10V) QG (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 ± 20 V V 13.5 mΩ 58 0.6 nC 50 Ω i PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

74V2G00

Abstract: 74V2G132 74V2G132CTR 74V2G132STR
Contextual Info: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V

Contextual Info: APM2324A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A , D RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23

TC9284AF

Abstract: tc9236 TC9236AF kd 617 TA2065F TS20 FPI43
Contextual Info: TOSHIBA TENTATIVE TA2065F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT TA2065I SILICON MONOLITHIC • CD FOCUS TRACKING SERVO LSI The TA2065F is a 3-beam type PUH com patible focus tracking servo LSI to be used in the CD player system. In com bination w ith a CMOS single chip processor

74V2G00

Abstract: 74V2G132 74V2G132CTR 74V2G132STR
Contextual Info: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V

74V2G00

Contextual Info: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V

Contextual Info: M A X I M U M R A T IN G S EACH DIODE Rating Reverse Voltage Sym bol Value VR 70 Vdc If 200 mAdc *FM(surae| 500 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc r 0JA 556 °c/w Pd 300 mW 2.4 mW/°C R8JA 417 °C/W TJ ' Tsta - 55 to + 150 °C Forward Current Peak Forward Surge Current

Contextual Info: U7006B DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

th 9428

Abstract: 9428 A102 APM9428 and/gi 9428
Contextual Info: APM9428 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A, RDS ON = 25mΩ(typ.) @ VGS = 4.5V RDS(ON) = 50mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5

APM3006N

Abstract: APM3006NU APM3006 STD-020C
Contextual Info: APM3006NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.8mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2800B

Abstract: STD-020C SOT-23-5 MARKING VF
Contextual Info: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)

diode marking code 7

Abstract: A102 APM2505N APM2505NU STD-020C
Contextual Info: APM2505NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =4mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)