GEZ DIODE
Abstract: 4-KD20 GEZ 26 42kD
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-kd204-kd202-kd2062-kd20+442-kd20gez diodegez 2642kd
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-kd204-kd202-kd2062-kd20+1042-kd20gez diodegez 26temperature switch2kd20diode kd 202kd 310diode kd 6 17gez 8.5 diode54kd
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KD 502
Contextual Info: ar y n i im prel iC-LO TRIANGULATION SENSOR Rev A1, Page 1/21 FEATURES APPLICATIONS ♦ Specially formed line image sensor comprising 129 elements ♦ High ambient light suppression of up to 100 kLux with filter glass ♦ Dynamic range of 100 dB ♦ 2 antivalent switching outputs
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2SD1399
Contextual Info: 2SD1399 No.1225 NPN Triple Diffused Planar Type Silicon Transistor 4 ? SANYO For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. • C a p a b l e of b e i n g m o u n t e d e a s i l y d u e to o n e - p o i n t f i x i n g t y p e p l a s t i c s m o l d
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2sd1399100male-200matc-200v+11203ki
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B 1344
Abstract: b1344 2sd2025
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor 100 V, —8A 2SB1344 •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in resistor between base and emitter. 3 ) Built-in damper diode. 4 ) Complements the 2SD2025. •A b s o lu te maximum ratings (T a = 2 5 t )
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2sb13442sd2025100ms10mhz+394l-969-db 1344b1344
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irf540 TTL
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+8irf620irf622vn1706dirf641irf643irf631irf540 ttlirf633
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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diode kd 514b30c250gd507adiode oa-172+6kyx 28sy360ky 202 h thyristorb280c1500c5000-3300bzy79c
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Contextual Info: PJSD03TS~PJSD36TS SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS 3~36 Volts VOLTAGE 120 Watts POWER • 120 Watts peak pules power tp=8/20 s • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications
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Allen-Bradley 100-C09Z*10
Abstract: 100-c09*10 100-C43*00 100-C09ZJ10 Allen-Bradley 100-c09*10 100-C23*10 Allen-Bradley 100-c37*00 c 100-M09N3 Allen-Bradley 100-M09 100-C23*200
Contextual Info: Bulletin 100-M, 100-C, 104-C, 100S-C, 104S-C, CAB6, 100-G Contactors Contactors Bulletin 100-M, 100-C, CAB6 • Bulletin 100-M 2.2 … 5.5 kW • Bulletin 100-C 4 … 45 kW • Bulletin CAB6 45 … 220 kW 4 Pages 4-9 … 4-64 Bulletin 100S, 104S Safety Contactors
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100-m100-c104-c100s-c+12104s-c100-gallen-bradley 100-c09z*10100-c09*10100-c43*00100-c09zj10allen-bradley 100-c09*10100-c23*10allen-bradley 100-c37*00 c100-m09n3allen-bradley 100-m09100-c23*200
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Allen-Bradley 100-c09*10
Abstract: Allen-Bradley 100-C09Z*10 CEFB1 100-dny41r 100-c09*10 Allen-Bradley 100-M09 100 c16z kcd4 switch CAB6-140-EI 100-MCA02
Contextual Info: Bulletin 100-M, 100-C, 104-C, 100S-C, 104S-C, CAB6, 100-G Contactors Contactors Bulletin 100-M, 100-C, CAB6 • Bulletin 100-M 2.2 … 5.5 kW • Bulletin 100-C 4 … 45 kW • Bulletin CAB6 45 … 220 kW 4 Pages 4-9 … 4-64 Bulletin 100S, 104S Safety Contactors
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100-m100-c104-c100s-c+12104s-c100-gallen-bradley 100-c09*10allen-bradley 100-c09z*10cefb1100-dny41r100-c09*10allen-bradley 100-m09100 c16zkcd4 switchcab6-140-ei100-mca02
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16c72a
Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Contextual Info: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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16c72a
Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Contextual Info: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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an701pic16c72apic16c72ds00701a-page+716c72ap16c72a1f045v power supply using lm7805 with bridge rectifier5v power supply using lm7805 and bridge rectifierscl 100328e4
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crimper CT 3508
Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.
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crimper ct 3508490-0401555.n0375.08g2206+2thermal fuse m20 tf 115 cmc3050
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16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Contextual Info: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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an701pic16c72apic16c72d-81739+1016c72ads275p16c72a16c721uf/35va 393fbuck converter with dspicki 78l05pid control dspicpid control dspic dc motor
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IEC 947 EN 60947
Abstract: Allen-Bradley contactors 100s Allen-Bradley 100-FSD250 lr13908 100-FSC280 100-SA10 IEC 158-1 VDE 0660 DIN19240 700S-CF440DJC Allen-Bradley contactor 100s-c09
Contextual Info: Bulletin 100S-C/104S-C Safety Contactors Bulletin 700S-CF Safety Control Relays Selection Guide Table of Contents Description Page Bulletin 100S-C/104S-C Safety Contactors Product Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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100s-c/104s-c700s-cfs-c3004cc8504c+13100s-c09404cc23404c100s-c09304ciec 947 en 60947allen-bradley contactors 100sallen-bradley 100-fsd250lr13908100-fsc280100-sa10iec 158-1 vde 0660din19240700s-cf440djcallen-bradley contactor 100s-c09
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DC PID 13 AX/T
Abstract: dc-dc PID 13 AX/T PID SMPS full-bridge dsPIC PID control SMPS PIC H bridge converter with dsPIC AN1207 datasheet AN1207 PID 13 AX/T DC dc-dc PID 13 PID 13 AX/T DC-dc
Contextual Info: AN1207 Switch Mode Power Supply SMPS Topologies (Part II) Author: Antonio Bersani Microchip Technology Inc. INTRODUCTION This application note is the second of a two-part series on Switch Mode Power Supply (SMPS) topologies. The first application note in this series, AN1114 “Switch Mode Power Supply (SMPS) Topologies (Part
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an1207an1114ds01207b-pagedc pid 13 ax/t+8dc-dc pid 13 ax/tpid smps full-bridge dspicpid control smps pich bridge converter with dspican1207 datasheetpid 13 ax/t dcdc-dc pid 13pid 13 ax/t dc-dc
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transistor BD 512
Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern
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12-vakku/50hziii/18/379transistor bd 512+9transistor kt 801transistor ktdiode kd 202junost 603kt801bgt 404gt313bmp 41 transistormp42a
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IS1540
Abstract: C150 ixys st 380-02F
Contextual Info: 3i,;i •■ MegaMOS FET Module IC1f*tipï*''irt'ï: VMO 380-02 F VDSS = 200 V = 385 A D25 RDS on = 4.6 m fì N-Channel Enhancement Mode Preliminary data 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C 200 V vDGR Tj = 25°C to 150°C; Res = 10 kD
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1n6207
Abstract: 1N6207A diode lts 246 R 360 A 5KE350 5KE220CA 5KE180 KD 109
Contextual Info: 1.5KE6.8 THRU 1.5KE440CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 440 Volts Peak Pulse Power - 1500 Watts _ FEATURES_ Case Style 1.5KE ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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5ke440ca10/1000ns1n62071n6207a+5diode lts 246 r 360 a5ke3505ke220ca5ke180kd 109
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Contextual Info: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE SOT- 23 250 mW POWER 7.0 Volts VOLTAGE Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) Applications • Low V F : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed
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kuka
Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Contextual Info: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5
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2sk20
Abstract: s630t 2SK2026
Contextual Info: 2SK2026-01 fS^SO FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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Contextual Info: MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Low V F : 0.5V (Typ) at IF=10mA .087(2.2) .078(2.0) Applications .004(.10)MIN.
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Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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irf740/741/742/743irfp340/341/342/343f740/irfp340irf741+5/irfp341f742/irfp342f743/irfp343irf740irfp340
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