DIODE K9 Search Results

Contextual Info: UM9301 PIN DIODE COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special

Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features： Š 3W output power Š 105µm fiber core diameter Š 0.22NA Š 976nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-2.00W Key Features： Š 2W output power Š 105µm fiber core diameter Š 0.22NA Š 976nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: E R E 4 2 M - 1 5 I5 A mi FAST RECOVERY DIODE Features D am per diode fo r high definition TV and high resolution display. • i\tz? Ji' It —Jl' K9-f -f Insulated package by fully m o ld in g . Connection Diagram High voltage by mesa design. • ftflMKtt

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "

DD800S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "

DIODE K9

Abstract: DD800S33K2C
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "

nc65

Abstract: fp25r12w2t fp25r12w2t4_b11 P2NC6
Contextual Info: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

DIN 16901

Abstract: DIN ISO 2768-M DIN 16901 130 DIN 16901 140 FS450R12KE3 DIN 16901 150 5B4A
Contextual Info: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

fs450r12ke3

Abstract: DIN 16901 130 P4E7
Contextual Info: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

AL6G

Contextual Info: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3

200LC40B

Contextual Info: Super Fast Recovery Diode Diode Module Wtm D200LC40B OUTLINE 400V 200A Feature • S ffiS S U • High lo Rating • trr=150ns • Isolation type • FA • Semiconductor Process Machine • High power source • Factory Automation • trr=150ns Main Use

zener diode 5J

Abstract: ZENER A19 DIODE A19 DIODE K9 ZENER DIODES E-1 zener a9
Contextual Info: 3EZ 1.3EZ 200 3W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 6 > + 5   <   Absolute Maximum Ratings Symbol Conditions Axial lead diode

F2 7h

Abstract: f2 diode
Contextual Info: ZMY 1 . ZMY 200 1,3W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 7 C + @   =   Absolute Maximum Ratings Symbol Conditions Surface mount diode Features

K95 Package

Contextual Info: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package

bc352

Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index

BC352* CSR

Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index

9962 GH

Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
Contextual Info: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in

Contextual Info: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • N EW PRODU CT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package

k9 diode

Contextual Info: Technische Information / Technical Information Schnelle Dioden-Modul Fast Diode Module DZ 180 U 25 K-K9 S Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung