DIODE K420 Search Results

k540

Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT544A-xxA Series Document No. : HUW0825015-01A Date of issue : Nov. 21 2008 Preliminary Preliminary Specification of 1.5 m Tunable Laser Diode Module SLT544A-xxA Series RoHS Compliant Sumitomo Electric Industries, Ltd.

thermistor k275

Abstract: J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xA Series Document No. : HUW0025006-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 10mW ~ SLT548x-xA Series

k540

Abstract: tunable laser diode slt5446 Diode k420
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT5446-xxA Series Document No. : HUW0425035-01A Date of issue : Jan. 10th, 2005 Preliminary Technical Specification of 1.5µm Tunable Laser Diode Module SLT5446-xxA Series Sumitomo Electric Industries, Ltd. 1/8

thermistor k275

Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series

V23990-K420-A60-PM

Contextual Info: V23990-K420-A60-PM target datasheet MiniSKiiP 3 PIM 1200V/100A Features MiniSKiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A60-PM Maximum Ratings

V23990-K420-A40-PM

Contextual Info: V23990-K420-A40-PM MiniSKiiP 3 PIM 1200V/100A MiniSKiiP® 3 housing Features ● Solderless interconnection ● Trench Fieldstop IGBT4 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A40-PM Maximum Ratings Tj=25°C, unless otherwise specified

k4202

Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

K4201

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

2SK4201

Abstract: 2SK4201-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

2sk4202

Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

2SK4201

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK4201

Abstract: 2SK4201-S19
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

k4202

Abstract: 2sk4202 nec k4202 2SK4202-S19-AY K4-20
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

a1290

Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
Contextual Info: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

Keithley

Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
Contextual Info: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor

A1516

Abstract: 2SK4209 A-1516 2SK42 k420
Contextual Info: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.

A1289

Abstract: A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203
Contextual Info: 2SK4203LS Ordering number : ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4203LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.

2SK4200

Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333
Contextual Info: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

K4208

Abstract: 2SK4208 2SK420 2SK42
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

K4208

Abstract: 2sk4208 2SK420
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

K4208

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

K4207

Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)