DIODE JA Search Results

Contextual Info: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

1N4148 krad

Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
Contextual Info: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference

BAV74

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed double diode BAV74 PINNING FEATURES • Small plastic SMD package

RURG30120CC

Abstract: URG30120C
Contextual Info: RURG30120CC Data Sheet January 2000 File Number 3400.3 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted

RURG30100

Abstract: TA09904
Contextual Info: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

S3 DIODE schottky

Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RHR30120

Abstract: rhr30120c RHRG30120CC TA49041
Contextual Info: RHRG30120CC Data Sheet January 2000 File Number 3411.3 30A, 1200V Hyperfast Dual Diode Features The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

MARKING C SOD882

Abstract: nxp Standard Marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

LMH6525

Abstract: High-Frequency Modulation Laser cd dvd
Contextual Info: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in

DIODE BAT86 replacement

Abstract: bat86
Contextual Info: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode

SVC341

Abstract: EN2618B 4550L
Contextual Info: Ordering number :EN2618B SVC341 Diffused Junction Type Sillicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

Contextual Info: LM88 LM88 Factory Programmable Dual Remote-Diode Thermostat Literature Number: SNIS116B October 6, 2011 LM88 Factory Programmable Dual Remote-Diode Thermostat General Description Features The LM88 is a dual remote-diode temperature sensor with 3 digital comparators. The LM88 has 3 open-drain outputs

Contextual Info: DATA SHEET PHOTO DIODE NR8800FS-CB φ 80 m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS DESCRIPTION The NR8800FS-CB is an InGaAs avalanche photo diode module with multi mode fiber, and can be used in OTDR systems. FEATURES • Small dark current

TM 1628 IC

Abstract: TM 1628 Datasheet Hitachi DSA00164
Contextual Info: HL6324MG AlGaInP Laser Diode ADE-208-737 Z Preliminary, 1st Edition Jan. 1, 1999 Description The HL6324MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light sources for laser pointers and optical equipments for amusement.

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.

Contextual Info: GEC P L E S S E Y 'SÊt JANUARY1996 SEMI CO NDUC TOR S DS4209-2.1 SV15.F FAST RECOVERY DIODE KEY PARAMETERS v RRM 1600V 205A | f AV 3000A FSM 35|iC Q r 3.2|is *n APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode. ■ Welding.

D1471

Abstract: M7 zener A3K1
Contextual Info: DATA SHEET ZENER DIODE RD6.2Z ZENER DIODE 200 mW ESD PROTECTION 5 V Signal Line MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD6.2Z is planar type zener diode possessing an allowable (Unit: mm) power dissipation of 200 mW. 2.8±0.2 0.4+0.1 −0.05 The purpose is ESD PROTECTION of 5 V Signal Line.

NDL7603P

Abstract: NDL7603P1 NDL7603P1C NDL7603P1D NDL7603P2 NDL7603P2C NDL7603PC NDL7603PD 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NDL7603P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7603P Series is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode module with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal

eft303

Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Contextual Info: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics

multiple wavelength laser att

Abstract: NDL7705P NDL7705P1 NDL7705P1C NDL7705P1D NDL7705P2 NDL7705P2C NDL7705PC NDL7705PD
Contextual Info: DATA SHEET LASER DIODE NDL7705P Series 1 500 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7705P Series is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode module with optical isolator. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT 0220G SG30TC 12M Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 30A 4.5 Feature ' Tj=175°C ' Full Molded 1Low Ir=40|jA 1Resistance for thermal run-away > Tj=175°C >37JLÆ-JL/ K » Ir=40|j A