DIODE JA Search Results

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES

DS4231

Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
Contextual Info: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

DSF21035SV

Abstract: DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
Contextual Info: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters

LIC AGENTS DATA

Contextual Info: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998

1000A 100V power diode

Contextual Info: DSF20060SF DSF20060SF Fast Recovery Diode Replaces January 2000 version, DS4218-4.0 DS4219-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

DSF20060SF

Abstract: DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60 AN 780a
Contextual Info: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

Contextual Info: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

1N4148 JANTX microsemi

Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

1N4148 JANTX microsemi

Abstract: 1N4148 JANTXV MELF Package EIA-418D
Contextual Info: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with

BAV74

Abstract: DIN 3015
Contextual Info: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise

marking SA

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

1N4148 JANTXV

Abstract: 1N4148UB2 EIA-418D
Contextual Info: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

Contextual Info: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

JAN 1N4500

Abstract: 1N4500
Contextual Info: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403

c18v

Abstract: C10V C25V SVC333 AM receiver 4084
Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode

C10V

Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode

diode equivalent

Abstract: JANTX1N3293
Contextual Info: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150

5SLD0650J450300

Abstract: Abb diode ABB Switzerland
Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.