DIODE HVM12 Search Results

Contextual Info: HVM121WK-Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Features Pin Arrangement • Low capacitance. C= 0.7pF max • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI ADE-208-042C Z Preliminary, Rev. 3 Jun. 1993 Features • Low capacitance. (C = 0.7pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-042C Z Preliminary, Rev. 3 Jun. 1993 Features • Low capacitance. (C = 0.7pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

HVM121WK

Abstract: SC-59A Hitachi DSA00313
Contextual Info: ADE-208-042C Z HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 3 Jun. 1993 Features Pin Arrangement • Low capacitance. (C= 0.7pF max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HITACHI AOE-208-042C Z HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 3 Jun. 1993 HITACHI Features Pin Arrangement • Low capacitance. (C= 0.7pF max) • M PAK p ack ag e is su itab le for h igh density surface mounting and high speed assembly.

1SS106

Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
Contextual Info: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1

Contextual Info: DIODE 7 -f • 7 K -7’ S PIN SERIES High frequency switching diodes ^ —K PIN diodes for antenna switching Characteristics Package Code URP Antenna switching UFP MPAK Vr Type No. V I Application ' 1 Ratings Pd (mW) c VF (V) If (p p ) max (mA) max HVU131

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

Contextual Info: HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 "C to +175 °C _it^ .j'ii6jS if TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak

HVM12 diode

Abstract: diode HVM12 HVM12 350 diode R1500 hvr6x2 R1200 R1200F R1500 R1800 R2000
Contextual Info: HIGH VOLTAGE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C Maximum Peak Reverse Voltage TYPE PRV VPK Maximum Average Rectified Current @Halt-Wave Resistive Load 60Hz Io @ T A AAV °C Maximum Forward Peak Surge Current

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7