DIODE H7 Search Results

eft303

Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Contextual Info: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

VCC400V

Abstract: C-150
Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KD

Abstract: TF010
Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGP30B60KD-EP
Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

diode lt 341

Abstract: MICRO ELECTRONICS ltd transistor
Contextual Info: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power

Contextual Info: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter

fw 02j

Abstract: FF200R12KE4
Contextual Info: Technische Information / technical information FF200R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter

FS450R17KE4

Contextual Info: Technische Information / technical information FS450R17KE4 IGBT-Module IGBT-modules EconoPACK + Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode EconoPACK™+ module with trench/fieldstop IGBT4 and Emitter Controlled³ diode IGBT-Wechselrichter / IGBT-inverter

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 IRGS15B60K
Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150
Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

BUK637-400A

Abstract: BUK637-400B P02S
Contextual Info: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Y5 1N

Abstract: FS100R12PT4
Contextual Info: Technische Information / technical information FS100R12PT4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK™4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and

MARKING CODE f5

Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

1n4148 ITT

Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Contextual Info: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark

Contextual Info: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode