DIODE H7 Search Results

eft303

Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Contextual Info: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KD

Abstract: TF010
Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

MARKING CODE f5

Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

5424G

Abstract: oki Rotary Encoder switch TA22 OLD2210 OLD221Q QLD2210 910nm
Contextual Info: O K I electronic components OLP221 Q GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD2210 is a high output GaAIAs infrared light emission micro-diode sealed with collimator lens in transparent epoxy resin. FEATURES • Parallel beam • 910 nm wavelength at peak emission

Contextual Info: MITEL SV15.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 205A Jf AV 3000A FSM 35|lC Q r • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.

transistor A6A

Abstract: 76T marking transistor A6A N
Contextual Info: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode

GE Refrigerator Compressor

Abstract: 400v 20A ultra fast recovery diode 2245-2
Contextual Info: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode

Contextual Info: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant

2050s

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SC4M Prrsm 77 -, ^+0.5 4>33±0-2 40 V 15A > T jl5 0 ° C Unit • mm Package I MTO-3P n ^ b iö # W Date code \ 5.0 ±0-3 T ype No. » \ 2.0 ±o.3 2.2 ± 0 - 5 ’ 2.4 ±o.3

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4MR 40V 5A > T jl 50°C Prrsm 77 >7,llÆ -,lbK V 'J i ffill > S R S ;H > D C /D C m m s t f - h s o A H tg ijife s 7t RATINGS Absolute Maximum Ratings a Item 5 Symbol Conditions

f10sc9

Abstract: A 2 Z F10SC
Contextual Info: y j y 2 /a v h + - KU7 S W - I * a Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS SF10SC9 Unit • mm Package I FTO-220 4.5 ±a 2.7±0- 10±0-2 <¿3.2-01 90 V 10 A Date code nafe_ @ 1 0181 F10!SC9 Type No. •Tjl50°C M _ Polarity • P r r s m l 7 V 5 Z S ÌJ1 . ffiiE

Contextual Info: RPM871-H7 Photo Link Module IrDA Infrared communication Module RPM871-H7 RPM871-H7 is an infrared communication module for IrDA Ver. 1.2 Low Power . The infrared LED, PIN photo diode, waveform shaping LSI are all integrated into a single package. This module is designed with power down function and

S60SC4M

Contextual Info: y j y 2 a / a y h + - K U 7 S W - I * Schottky Barrier Diode Twin Diode O UTLINE D IM E N S IO N S S60SC4M V'J i • Prrsm 77 • lo-o.i -, 4>33±0-2 ^+0.5 5.0 ±0-3 2.2 ±0-5 n-^bgÖT? #i| Date code 40V 60A • T jl5 0 ° C U n it • m m Package I MTO-3P

EN60825-1

Abstract: IEC825-1 RPM872-H7 laser diode 3pin
Contextual Info: RPM872-H7 Photo Link Module IrDA infrared communication module RPM872-H7 RPM872-H7 is an infrared communication module for IrDA Ver. 1.2 Low Power . The infrared LED, PIN photo diode, and waveform shaping LSI are all integrated into one single package. This module is designed for low power

F30SC3L

Abstract: A27AM
Contextual Info: Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S SF30SC3L Package I FTO -220 1 0 ±0.2 ^3.2-ai Unit • mm 2.7 ±a: (M Date code 30V 30A an ^3_ Type No. e ' i c 0181 v F30S(C3L M • T jl5 0 ° C Polarity • 1 £ V f = 0.45 V # Prrsm t j ^ y ' j i f f i l i

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E ]> Optoisolator Specifications _ 74 b b fl S l OOOm^tf 0E3 • û T Y / ' V / - ,-P 7 H74C1, H74C2 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR TTL Interface M IL L IM E T E R S SYMBOL A T h e H74C1 a n d H74C2 are gallium arsen id e in frared

Contextual Info: HZT7 Monolithic IC Zener Diode for Temperature Compensation HITACHI ADE-208-131A Z Rev. 1 Apr. 1995 Features • Lower temperature coefficient of the reference voltage. (yz = ±0.002 to ±0.01 %/°Cmax) Ordering Information Type No. Mark Package Code HZT7

Contextual Info: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA

irg7ph35

Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
Contextual Info: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses

irg7i

Contextual Info: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G

Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation