DIODE H5E Search Results

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

BVJ 47

Contextual Info: ISOCOM COMPONENTS LTD H5E I> • Mêab51D 00DD5SÖ 1 » I S O 7 | C N Y 75AX, CNY 75BX, CNY 75CX ll‘!“1’^ " 1*,!Ì -li 'rii':'' i!t'i! lil!''i"‘!‘ '“‘ j ^ ^ I #“ u !•'-=v w “i i ^ ^ 1Hi I’/ ' ¡ . ^ M r ^ i 1 '*-■ £i i - w ^ s f r & v ' V - r ,1. -t ft n ;* ‘M

Contextual Info: TOSHIBA D I S C R E T E / O P T O H5E D • TOSHIBA FIELD EFFECT TRANSISTOR TOTTSSD OOlV^bt 5 «TOSM - YTFP150 SILICON N CHANNEL MOS TYPE (ir - MOSI) IP s -_ 1, INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: H5E D N AUER PHILIPS/DISCRETE • bb53^31 QQHObOS 2 P o w e rM O S tra n s is to r Logic Level F E T G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for

IRFZ48

Abstract: irfz48 n mosfet
Contextual Info: 4ÔS54S2 Q D l S a m International k? r Rectifier 3b5 PD-9.758 IIN R IRFZ48 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching

BUK657

Abstract: BUK657-600A BUK657-600B BUK657-600C T0220AB tg 25 600b
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ P o w erM O S tra n s is to r Fast R eco very D io de F E T B U K 657-600A B U K 657-600B B U K 657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode

Contextual Info: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel

Contextual Info: International K9R Rectifier HEXFET Power M OSF ET • • • • • • • m 4055452 0015026 bTE" INR pd-9-3801 IRFD1Z0 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature

Contextual Info: International ioR Rectifier 4ÔS5452 0 0 1 S 3 flô PD-9.753 IRFIZ44G INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • • I NR Û1T Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

Contextual Info: T ^ 5 - Ì 7 PUBLICATION D/234 PRELIMINARY INFORMATION PIN FUNCTIONS 1 Data change PIN CONFIGURATON 15 D10 28 lead Dual-in-Line 2 Power up reset 16 D11 3 Vss 17 D12 4 Alert reset 18 D13 5 Decode abort 19 Group digit ’O ’ 6 Preamble mode 20 All-call inh.

philips bfq

Abstract: 1B05 1B-05 BUK437-500B
Contextual Info: P HI L IP S I N T E R N A T I O N A L fc.SE D • 711E fl2b D O I ^ S l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

transistor IC BT 134

Contextual Info: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

relay cross reference

Contextual Info: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-0,6 Order No.: 2900558 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 0.6 A output current, and emergency stop

DCM03

Abstract: 74ALVT162244
Contextual Info: Philips Semiconductors Preliminary specification 2.5V/3.3V ALVT 16-bit buffer/driver with 3 0 il termination resistors 3-State wT1fioodd FEATURES * No bus current loading when output is tied to 5V bus • 16-bit bus interface * Latch-up protection exceeds 500mA per JEDEC Std 17

Contextual Info: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-0,6 Order No.: 2900558 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550

Contextual Info: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-2 Order No.: 2900559 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 2.4 A output current, and emergency stop

Contextual Info: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-9 Order No.: 2900561 "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 9 A output current, and emergency stop

PHILIPS BDX65

Abstract: BDX65 PHILIPS BDX64
Contextual Info: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,

diode h5e

Abstract: MB2652 MB2652BB
Contextual Info: NAPC/PHILIPS □SE SEMICOND D • b b S a ^M 0D ôbSb4 2D 4 « S IC 3 Product specification Philips Semiconductors Advanced BiCMOS Products Dual octal transceivers/registers, non-inverting (3-State FEATURES MB2652 The MB2652 transceiver/register consists of

Contextual Info: N AMER PHILIPS/DISCRETE ii bbS3131 0Q22bTl 1 • BYV121 SERIES 2SE D J v. T -0 3 - / 9 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended fo r use in

Contextual Info: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.

R61509V

Abstract: S695 diode
Contextual Info: Target Spec R61509V 260k-color, 240RGB x 432-dot graphics liquid crystal controller driver for Amorphous-Silicon TFT Panel REJxxxxxxx-xxxx Rev.0.11 April 25, 2008 Description . 6