DIODE GU Search Results

Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

BAS70L

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

BAS40L

Abstract: marking code s6 SOD-882L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

Contextual Info: BAT85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ‹ This diode is also available in the MiniMELF case with type

MINI-MELF DIODE green CATHODE

Abstract: DIODE WITH SOD CASE green color ring diode DIODE 436
Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. ‹ The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ‹ This diode is also available in the DO-35 case with type

Contextual Info: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations

650nm 5mw laser module

Abstract: "red laser diode" Laser Diode Laser Diode 10 pin 650nm 5mw laser D650 650nm 5mw module 650NM D650-5 RED laser diode operating Temperature
Contextual Info: US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module

diode

Abstract: Laser module "red laser diode" D660-5 Laser Diode 4 pin red diode laser 10 pin laser diode laser diode symbols RED laser diode operating Temperature laser diode 12 pin
Contextual Info: US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

transistor k43

Abstract: FBAS40TW marking k43 diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

K73 Package

Abstract: FBAS70TW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

FMMD6050

Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Contextual Info: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode

marking k47

Abstract: SCHOTTKY BARRIER BRIDGE RECTIFIERS FBAS40BRW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

k44 transistor

Abstract: transistor k44 FBAS40DW-04
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

BAS70BRW

Abstract: FBAS70BRW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

pn junction diode application

Abstract: power Schottky bridge FBAS70DW-04 marking K74
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

laser diode 405nm

Abstract: "Photo Diode" a1263 LA0225CV 405nm diode 71608 blue Laser-Diode 405nm laser diode la0225
Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES