DIODE GFT Search Results

thyristor BT 161

Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability

GEZ 44 A diode

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from

low frequency automatic gain control

Abstract: automatic gain control Frequency Generator 1KHZ gg2v
Contextual Info: PIN CONFIGURATION FEATURES • Positive bias only • Low gate voltage • Enhancement mode operation • Wide AGC range - 50dB at 200MHz • Zener diode gate protection • Ion implanted for greater reliability • High power gain without neutralization - 20dB at 200MHz

Contextual Info: SKiiP 11NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; ([ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

diode BFT 99

Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Contextual Info: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

Contextual Info: SKiiP 11AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; '@ Z S L& (¥ Diode - Inverter MiniSKiiP 1 3-phase bridge inverter SKiiP 11AC126V1 Features # $%&' ()*+,- ./0(&

Contextual Info: SKiiP 23NAB126V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L;CS .; .;1X L/CS & Q GF R;O 4+8*&& 2'-* 79&* &@*,969*5 (& Q GF VNTW R; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& Q GF VNTW R; .$ .$1X (Z

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

marking diode KE

Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series

Diode GFK

Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

SIG03-30

Abstract: P151 SIG03 T760 T810 T930 TVIM 80136
Contextual Info: S I G 0 3 2 i a (« *m à i ' ' 7 —y -4* —K ) • « • » ta k : O utline D raw ings GENERAL-USE RECTIFIER DIODE I Features • Diffused-junction • High voltage capability • • Excellent avaranche characteristics Stud mounted ■ ffliiis * A p p lic a tio n s

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

R611

Abstract: 3R3TI30E-080
Contextual Info: 3R3TI30E-080 y ' i :fr — K ’ 1M 'ix ? i • * » ’+}£ •Outline Drawings DIODE and T Y R IS T O R M ODULE : Features • 7 ^ Glass Passivation Chip • Easy Connection • Insulated Type • d i / d t l i M v , ' Large di/dt • d v / d tiiS A '^ ^ i' Large dv/dt

ERP15

Abstract: ERP15-16 T151 T810
Contextual Info: ERP1 5 96o a -H a m m y 7 'È ± '< r - ÿ ' ( * - V • _ ^ • ^ " + > 4 : O u t l i n e D r a w i n g s GENERAL-USE RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • T M iia Flat pa ckag e type ■ E I & : A pplications • ft* . • «

ERG51

Abstract: SIG01
Contextual Info: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility

FTC 276

Abstract: SAA7370A TZA1015 TZA1015T saa7348
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

Optical pickup OEIC

Abstract: SAA7370A TZA1015 TZA1015T saa7348 laser diode philips cd
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

Contextual Info: Advanced Power MOSFET SFM 9214 FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ^DS on = Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA (Max.) @ VDS= -250V

2SK351

Abstract: HITACHI 2SK* TO-3
Contextual Info: HH'ìbSGi G013D37 016 • H I T 4 2SK351 H IT AC HI / OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II« . |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching.

GFX DIODE

Abstract: Diode GFK Gex DIODE DIODE BFT marking code BFM LF bgv DIODE GGV diode ggz diode Diode GHM bdv 83 do
Contextual Info: PL IA NT CO M *R oH S Model CD214C is currently available, although not recommended for new designs. Model SMCJ is preferred. Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

s26d

Contextual Info: T E M IC SÌ9926DY Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET P rod uct S u m m a r y v DS(V) 20 r DS(on) (£2) I d (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ Vos = 2.5 V ±5.2 Di D 2 D2 Di U S O -8 u Gi Ô Top View Ô S2 Si N-Channel MOSFET N-Channel MOSFET