DIODE GFT Search Results

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

GEZ 44 A diode

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from

low frequency automatic gain control

Abstract: automatic gain control Frequency Generator 1KHZ gg2v
Contextual Info: PIN CONFIGURATION FEATURES • Positive bias only • Low gate voltage • Enhancement mode operation • Wide AGC range - 50dB at 200MHz • Zener diode gate protection • Ion implanted for greater reliability • High power gain without neutralization - 20dB at 200MHz

Contextual Info: SKiiP 11NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; ([ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

diode BFT 99

Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Contextual Info: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

Contextual Info: SKiiP 11AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; '@ Z S L& (¥ Diode - Inverter MiniSKiiP 1 3-phase bridge inverter SKiiP 11AC126V1 Features # $%&' ()*+,- ./0(&

Contextual Info: SKiiP 23NAB126V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L;CS .; .;1X L/CS & Q GF R;O 4+8*&& 2'-* 79&* &@*,969*5 (& Q GF VNTW R; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& Q GF VNTW R; .$ .$1X (Z

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

diode BFT 99

Abstract: BEM 45 bfw 10 transistor GGT DIODE ON marking BHR marking code BFK GHM DIODE GFX DIODE GGR diode GHM PF
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series

GFX DIODE

Abstract: Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

diode marking GDE on semiconductor

Abstract: bgv DIODE bdv 83 do SMCJ6.0C bem diode GGM DIODE SMCJ408CA Diode GFK 48 gft 70 diode marking BFK on semiconductor
Contextual Info: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 495 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

ERP15

Abstract: ERP15-16 T151 T810
Contextual Info: ERP1 5 96o a -H a m m y 7 'È ± '< r - ÿ ' ( * - V • _ ^ • ^ " + > 4 : O u t l i n e D r a w i n g s GENERAL-USE RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • T M iia Flat pa ckag e type ■ E I & : A pplications • ft* . • «

ERG51

Abstract: SIG01
Contextual Info: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility

Contextual Info: r n ThS GftAWwC 6 un^uBuShKT- AELEASEd FM PUfitJWn&W COPYWOHT - _ BY rH » ELECTROMCS CORPORATION. WST ALL RIGHTS RESERVED. M R E V IS IO N S 22 c MECHANICAL: A \ / — .100 1 -+ 3 5 + 7 + + + + 6 TX MATERIALS: HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0 .

Optical pickup OEIC

Abstract: SAA7370A TZA1015 TZA1015T saa7348 laser diode philips cd
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

2.1 amplifier circuit diagram

Abstract: 8 pins IC LF 353 n LF-DIODE diode S6 diode S6 39 cd 471 capacitor CD Laser pickup CD Laser pickup focus tracking electronic component dates with photo philips laser pickup
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Product specification Supersedes data of 1998 Sep 09 File under Integrated Circuits, IC01 1999 Aug 19 Philips Semiconductors Product specification

8 pins IC LF 353 n

Abstract: diode S6 31 536 photo Optical pickup OEIC
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Product specification Supersedes data of 1997 May 16 File under Integrated Circuits, IC01 1998 Sep 09 Philips Semiconductors Product specification

buz22

Contextual Info: SIEMENS BUZ 22 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 22 Vbs 100 V b 34 A ^ S on) Package Ordering Code 0.055 n TO-220 AB C67078-S1333-A2 Maximum Ratings Parameter Symbol Continuous drain current b 7b = 27 °C

2SK351

Abstract: Hitachi Scans-001 HITACHI 2SK* TO-3
Contextual Info: HH'ìbSGi G013D37 016 • H I T 4 2SK351 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II«. |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching. •

DIODE BFT marking code

Abstract: GFX DIODE Diode GFK diode smc bfk Gex DIODE suppressor diode 17 ca Diode BFK GGR diode Diode GEG diode gfx
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Compliance Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts ■ ■ ■ IEC 61000-4-2 ESD Min. Level 4 IEC 61000-4-4 EFT IEC 61000-4-5 Surge