DIODE GATE Search Results
DIODE GATE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54S133/BEA |
|
54S133 - NAND GATE, 13-INPUT - Dual marked (M38510/07009BEA) |
|
||
| 54ACTQ32/QCA |
|
54ACTQ32 - OR Gate, ACT Series, 4-Func, 2-Input, CMOS, - Dual marked (5962-8973601CA) |
|
||
| 5409/BCA |
|
5409 - AND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/01602BCA) |
|
||
| 54HC30/BCA |
|
54HC30 - 8-Input NAND Gates - Dual marked (M38510/65004BCA) |
|
||
| 54F21/BCA |
|
54F21 - AND GATE, DUAL 4-INPUT - Dual marked (5962-8955401CA) |
|
DIODE GATE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
|
OCR Scan |
CA3019 92CS-14254 10-Lead 92CS-15262 12-Lead CA3039 CA3019 ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate | |
|
Contextual Info: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of |
OCR Scan |
LB1105M LB1105M 1260TA | |
C-150
Abstract: IRFI840G IRGIB6B60KD PD944
|
Original |
PD-94427C IRGIB6B60KD O-220 IRFI840G O-220 C-150 IRFI840G IRGIB6B60KD PD944 | |
transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
|
Original |
IRGIB15B60KD1 O-220 IRFI840G O-220 transistor c 2335 C-150 IRFI840G IRGIB15B60KD1 | |
|
Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
4385A IRGB5B120KD O-220 O-220AB IRF1010 | |
|
Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGIB15B60KD1PbF O-220 O-220 | |
|
Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
PD-94427A IRGIB6B60KD O-220 IRFI840G O-220 | |
420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
|
Original |
IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A | |
diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
|
Original |
PD-94576A IRGIB10B60KD1 O-220 Param99 IRFI840G O-220 diode 10a 400v 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1 | |
transistor irf 645
Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
|
Original |
4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. transistor irf 645 diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250 | |
C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
|
Original |
PD-94427D IRGIB6B60KD O-220 O-220 C-150 IRGIB6B60KD ANSI PD-94427D | |
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
|
Original |
4599A IRGIB15B60KD1 O-220 IRFI840G O-220 transistor BR 9013 C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source | |
C-150
Abstract: IRFI840G IRGIB10B60KD1
|
Original |
PD-94576 IRGIB10B60KD1 O-220 IRFI840G O-220 C-150 IRFI840G IRGIB10B60KD1 | |
IGBT 900v 60aContextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGB5B120KDPbF O-220 O-220AB O-220AB IGBT 900v 60a | |
|
|
|||
transistor irf 645
Abstract: AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120
|
Original |
4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. transistor irf 645 AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 | |
800v irf
Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
|
Original |
4386A IRGP8B120KD-E O-247AD O-247AD O-247 800v irf IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp | |
diode 30a 400v
Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
|
Original |
94388B IRGP30B60KD-E O-247AD O-247AD diode 30a 400v 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E | |
C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
|
Original |
94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB O-220AB AN-994. O-220 C-150 IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L | |
IRGP30B60
Abstract: C-150 IRGP30B60KD-E
|
Original |
4388A IRGP30B60KD-E O-247AD O-247AD IRGP30B60 C-150 IRGP30B60KD-E | |
IRGB10B60KD
Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
|
Original |
94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB IRGB10B60KD C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L | |
|
Contextual Info: PD - 94388 IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGP30B60KD-E O-247AD O-247AD | |
IRGPS40B120UD
Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
|
Original |
4240A IRGPS40B120UD Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UD ic MARKING QG 1000V 20A transistor | |
TLP590Contextual Info: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP |
OCR Scan |
TLP590 TLP590 | |
irf 1830
Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
|
Original |
94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607 | |