DIODE G Search Results
DIODE G Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure |
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904nm-5mW 904nm com/n904nm5m | |
CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
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CA3019 92CS-14254 10-Lead 92CS-15262 12-Lead CA3039 CA3019 ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
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SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE | |
BAS70LContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring |
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M3D891 BAS70L OD882 MDB391 SCA75 613514/01/pp8 BAS70L | |
BAS40L
Abstract: marking code s6 SOD-882L
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M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP50-03 SOD-323 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ |
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OD-323 BAP50-03 OD-323 | |
Contextual Info: BAS32L _ / v _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated |
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BAS32L BAS32L OD-80C 7Z105Z1 100JT, 7Z10519 | |
Thyristor ABB ys 150Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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BAP51-02
Abstract: smd diode S4 diode S4 05 AS 15 f
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BAP51 OD523 SC-79 BAP51-02 smd diode S4 diode S4 05 AS 15 f | |
DIODE S4 74
Abstract: BAP50 BAP50-02 diode DB 3 C
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BAP50 OD523 SC-79 DIODE S4 74 BAP50 BAP50-02 diode DB 3 C | |
Contextual Info: 1N4448 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the SOD-123 case with the type |
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1N4448 DO-204AH DO-35 150mA OD-123 1N4448W, LL4448, OT-23 IMBD4448. | |
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1N4148
Abstract: 1N4148 SOD-123 1N4148 sod123 DIODE 1N4148 minimelf DIODE 1N4148 characteristics thermal diode 1n4148 1N4148 SIGNAL DIODE 1N4148W DO-204AH IMBD4148
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1N4148 150mA DO-204AH DO-35 OD-123 1N4148W, LL4148, OT-23 IMBD4148. 1N4148 1N4148 SOD-123 1N4148 sod123 DIODE 1N4148 minimelf DIODE 1N4148 characteristics thermal diode 1n4148 1N4148 SIGNAL DIODE 1N4148W DO-204AH IMBD4148 | |
BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
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BAP50LX OD882T sym006 BAP50LX SMD MARKING CODE M 4 Diode | |
diode 1N4448Contextual Info: 1N4448 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the SOD-123 case with the type |
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1N4448 DO-204AH DO-35 150mA OD-123 1N4448W, LL4448, OT-23 IMBD4448. diode 1N4448 | |
1N4148 75v 150mA diode
Abstract: DIODE 1N4148 characteristics thermal diode 1n4148 1N4148 sod123 DIODE 1N4148
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1N4148 150mA DO-204AH DO-35 OD-123 1N4148W, LL4148, OT-23 IMBD4148. 1N4148 75v 150mA diode DIODE 1N4148 characteristics thermal diode 1n4148 1N4148 sod123 DIODE 1N4148 | |
diode DB 3 C
Abstract: BAP50 BAP50-02
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BAP50 OD523 SC-79 diode DB 3 C BAP50 BAP50-02 | |
diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
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BAP51 OD523 SC-79 diode S4 05 smd diode S4 diode smd JS 8 BAP51-02 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE 1 2 SOD-123 DESCRIPTION The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application. 1 2 FEATURES SOD-323 * Planar diode |
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BAV20W OD-123 BAV20W OD-323 BAV20WG-CA2-R BAV20WG-CB2-R | |
Contextual Info: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version. |
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10MHz | |
data sheet for all smd components
Abstract: DIODE marking S4 06 HD radio nxp application BAP50-03 SC-76 BAP50
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BAP50-03 OD323 sym006 SC-76 OD323 BAP50-03 data sheet for all smd components DIODE marking S4 06 HD radio nxp application SC-76 BAP50 | |
Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical |
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L9278-14 SE-171 KLED1041E01 |