DIODE FULL WAVE RECTIFIER BR 300 Search Results

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel

IRKH162-14D20

Abstract: IRKH135-16D25
Contextual Info: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage

Contextual Info: IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features • Low VCE ON Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics

10K1

Abstract: AN-599 MBR4020PF MBR4030PF
Contextual Info: MBR4020PF MBR4030PF SCH OTTKY B A R R IE R R E C T IF IE R S HOT C A R R IE R POWER R EC T IF IER 40 A M P ER E 20,30, V O L T S . employing the Schottky Barrier principle in a large area metalto-silicon power diode. State of the art geometry features epitaxial

100A6

Abstract: IRGP4078DPBF
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

Contextual Info: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

BRIDGE-RECTIFIER 61000-4

Abstract: transient suppressor spice model DLPA006 DLPA006-7 DL3 DIODE 3-Phase Full-Wave Bridge Rectifier
Contextual Info: SPICE MODEL: DLPA006 DLPA006 Lead-free Green DATA BUS TRANSIENT SUPPRESSOR/THREE PHASE FULL WAVE BRIDGE RECTIFIER NEW PRODUCT Features • · · · · Fast Switching Speed A Ultra-Small Surface Mount Package SOT-363 Ideal For Three Dataline Rail Clamp or Three Phase Full

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive

Contextual Info: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4266DPbF TO-247AC E n-channel

irg7i

Contextual Info: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G

Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 60A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E

irg7ph50

Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications

IGBT gate driver welding

Abstract: IRGP4063D
Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

0/b40 B2 RECTIFIER 400V

Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Contextual Info: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive  Inverters

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF

Contextual Info: IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263DPbF TO-247AC E n-channel

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive

igbt 50V 420A

Abstract: irg7ic irg7i 105MH
Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

IRGPS46160D

Contextual Info: IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100°C tSC ≥ 5 s, TJ max = 175°C E C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications • Industrial Motor Drive

Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters

IEC61000-4-4

Abstract: LCE170A SMCGLCE170A SMCJLCE170A
Contextual Info: SMCGLCE6.5 thru SMCGLCE170A, e3 SMCJLCE6.5 thru SMCJLCE170A, e3 1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE WWW . Microsemi .C OM DESCRIPTION This surface mount Transient Voltage Suppressor TVS product family includes a