DIODE FR 202 Search Results

BC237

Abstract: MMBV2107 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

TZX27B

Abstract: TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
Contextual Info: TZX2V4 - TZX36C PRELIMINARY 500mW EPITAXIAL PLANAR ZENER DIODE Features • · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current B A Mechanical Data · · · · · A C D Case: DO-35, Glass Leads: Solderable per MIL-STD-202,

tzx24b

Contextual Info: TZX2V4 - TZX36C PRELIMINARY 500mW EPITAXIAL PLANAR ZENER DIODE Features • · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current B A Mechanical Data · · · · · A C D Case: DO-35, Glass Leads: Solderable per MIL-STD-202,

marking code 5a sot-363

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

BC237

Abstract: SOT-363 marking jf sot363 marking qs
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C

BC237

Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

BC237

Abstract: MPS9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

motorola 5118 user manual

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

transistor 3504 npn

Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

2N3867

Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

X10391

Contextual Info: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available

BSS95

Abstract: BSS 95 siemens transistor bss S 437 Diode
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 95 = 240 V = 0.8 A ^DSIon = 8-0 Q VDS TO-202 /D • N channel • Enhancement mode • Package: TO -202') Type Ordering code for version in bulk BSS 95 Q62702-S461 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage

5SV6

Abstract: 3A21N C67078-A1107-A2
Contextual Info: y L ôûd i> m ô23SbQS qomflû2 i m s i e s 14882 D T - 3 e? - / 3 88D BUZ 202 SIEMENS AKTIENÛESELLSCHAF -Main ratings N-Channel = 400 V Draln-source voltage ^3 = 11,5 A Continuous drain current Draln-source on-resistance ^DS on = 0,5 n Description C ase

diode marking A43

Contextual Info: c o A tc m r SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDFR S e r i e s R o H s Device Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 1 0 0 5 (2 5 1 2 ) High c o m p o n e n td e n s ity . 0 .1 0 2 (2 .6 0 ) 0 .0 9 5 (2 .4 0 )

SMD MARKING CODE 102

Abstract: smd diode fr diode smd marking 1A marking code W1 transistor smd code marking 102 0028C diode FR 105 MARKING CODE 0051
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDFR Series RoHS Device Features Bi-diretional ESD protection. (16kV) IEC 61000-4-2 rating. Surface mount package. High component density. 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005(2512) standard package,

smd diode fr

Abstract: CDSFR4148
Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSFR4148 RoHS Device High Speed Features Designed for mounting on small surface. 1005(2512) Extremely thin/leadless package. 0.102(2.60) 0.095(2.40) High mounting capability, strong surge withstand, high reliability.

A1069

Abstract: smd marking bb
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230R RoHS Device Io = 200 mA V R = 30 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Low reverse current. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package.

smd diode 27 E

Abstract: CDBFR0230L smd diode code marking 27 smd diode schottky code marking 29
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230L RoHS Device Io = 200 mA V R = 30 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Low forward voltage. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package.

Contextual Info: LL4150 SURFACE MOUNT FAST SWITCHING DIODE Features_ • • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance Mechanical Data_ • • • • • Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202,

Contextual Info: 1N4150 FAST SWITCHING DIODE Features • • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance I T D Mechanical Data_ • • • • • Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208

FRGB1315C

Abstract: LED TRI-COLOR FAGB1315C
Contextual Info: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃～100℃ Operating Temperature : -40℃～ 85℃

FR 302 Diode

Contextual Info: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃～100℃ Operating Temperature : -40℃～ 85℃

FAGB1315C

Abstract: FRGB1315C FR98
Contextual Info: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃～100℃ Operating Temperature : -40℃～ 85℃

ma4p

Abstract: MA4P7108 MA4P7010 diode KS 1060 - R MA4P4302
Contextual Info: HIPAX Series PIN Diodes High Power PIN Diodes MA4P4000, MA4P4300, MA4P7000 MA4P7100, MA4P1200, MA4P1250 Features • High Power Handling • Low Loss, Low Distortion • Voltage Ratings to 1000 Volts • Passivated PIN Chip - Full Face Bonded • Hermetically Sealed