DIODE F4 8A Search Results

C 5388

Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Contextual Info: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class

diode F4 8a

Contextual Info: GBU 8A . GBU 8M . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 03 Inline bridge Silicon-Bridge Rectifiers >? +4 >? +? >? +A >? +> >? +B >? +C

STTH30R06CW

Contextual Info: STTH30R06CW TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2 x 15 A VRRM 600 V IRM (typ.) 8A Tj (max) 175 °C VF (max) 1.8 V trr (max) 50 ns A2 A1 FEATURES AND BENEFITS • ■ ■ ■ K TO-247 STTH30R06CW Ultrafast switching

id 0835

Abstract: STW8NB90 STH8NB90FI
Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: Ordering number : ENA2265 STK681-360-E Thick-Film Hybrid IC Forward/Reverse Motor Driver http://onsemi.com Overview The STK681-360-E is a hybrid IC for use in PWM current control forward/reverse DC motor driver with brush. Applications • Office photocopiers, printers, etc.

Contextual Info: STK681-360-E Thick Film Hybrid IC Forward/Reverse Motor Driver Application Note http://onsemi.com Overview The STK681-360-E is a hybrid IC for use in PWM current control forward/reverse DC motor driver with brush. Function • Allows forward, reverse, and brake operations in accordance with the external input PWM signal.

V23076-A1001-D143

Abstract: v23076-a3001-d142 V23084-C2001-A303 V23076-A1001-C133 tyco v23076-a3001-c132 V23133-A1001 v23076-a3001-c132 V23134-M1052-C642 ipod touch circuit diagram AXICOM Relay v23
Contextual Info: 00-Cover_1.qxd 17.03.2008 12:00 Uhr Seite 1 RoHS Ready Automotive Relays and Switching Modules 00-Cover_1.qxd 17.03.2008 12:00 Uhr Seite 2 T YCO E L E C T R O N I C S G LO B A L AU TO M OT I V E D I V I S I O N 01_Introduction_p1-34_2.qxd 17.03.2008 12:43 Uhr

Contextual Info: STW8NB100 N - CHANNEL 1000V - 1.2ft - 8A - TO-247 _ PowerMESH MOSFET PRELIM IN ARY DATA TYPE STW8NB1 00 . . . . . . . V dss RDS on Id 1000 v < 1.5 a 8 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STK681-320

Abstract: ITF02478 ITF02479 ITF02494 ITF02521
Contextual Info: Ordering number : EN*A0762 STK681-320 Thick-Film Hybrid IC Forward/Reverse Motor Driver Overview The STK681-320 is a hybrid IC for use in current control forward/reverse DC motor driver with brush. Applications • Office photocopiers, printers, etc. Features

Contextual Info: Ordering number : ENA0762A STK681-320 Thick-Film Hybrid IC Forward/Reverse Motor Driver Overview The STK681-320 is a hybrid IC for use in current control forward/reverse DC motor driver with brush. Applications • Office photocopiers, printers, etc. Features

IRAC1166-100W

Abstract: KNB1560 cp5 94v-0 tdk ferrite PQ3535 CP5 94V0 hughes TERMINAL 200-203 PQ3535 PC44 smd diode f4 4d t3.15A/250V IRF22N60K
Contextual Info: 10 Ang Mo Kio Street 65, #03-18 TechPoint, Singapore 569059 Reference Design # 0618 IRAC1166-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by ISRAEL SERRANO 18 August 2006 Rev.1A 18 August 2006 RD#0618 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105

Contextual Info: STW8NB90 N - CHANNEL 900V - 1 .3û - 8A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB90 • . . . . 900 V R d S oii < 1.45 a Id 8 A TYPICAL RDS(on) = 1.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STW16NB60

Contextual Info: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STW16NB60

Contextual Info: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

813LN

Abstract: 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF
Contextual Info: 1 2 3 4 6 7 8 EW6 VCC_CORE CPU CORE 5 Page:26 CLOCK GEN ICS951413CGLFT A +3VPCU +3V_S5/+3VSUS +3V CELERON-M/PENTIUM-M +3VPCU +3V_S5 A Page:4 +3VSUS INTEL Mobile_479 CPU +3V Page:2, 3 +5VSUS +5VSUS/+5V +12V +5V Page:24 +12V HOST BUS 400MHZ +1.8VSUS +1.8VSUS/+1.8V

Contextual Info: CSD17306Q5A www.ti.com SLPS253A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17306Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17301Q5A www.ti.com SLPS215C – JANUARY 2010 – REVISED SEPTEMBER 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17301Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD16322Q5C www.ti.com SLPS241B – DECEMBER 2009 – REVISED MAY 2010 DualCool N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16322Q5C FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY DualCool™ Package SON 5x6mm Optimized for Two Sided Cooling

Contextual Info: CSD17305Q5A www.ti.com SLPS254A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17305Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17302Q5A www.ti.com SLPS216A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17302Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17310Q5A www.ti.com SLPS255A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17310Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17303Q5 www.ti.com SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17303Q5 FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD17311Q5 www.ti.com SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17311Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance