DIODE EU 2Z Search Results

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

IRG4BC20KD-S

Contextual Info: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Contextual Info: P D -9 .1 6 9 0 International M R Rectifier IRG4IBC30KD PR E LIM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High switching speed optimized for up to 25kHz With lOW VcE on • Short Circuit Rating 10|as @ 125°C, V se = 15V

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: PD -9.1689 International M R Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10|as @ 125°C , \ ^ e = 15V

ir igbt 1200V 10A

Abstract: DIODE JS 8 IRGPH30MD2 diode 5mm IRG4PH30KD IRGPH30M
Contextual Info: International I R Rectifier PD- 9.1579 IRG4PH30KD PRELIM IN ARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10|js, V Cc = 720V , T j = 125°C,

Contextual Info: PD -91750 International M R Rectifier IRG4IBC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.66V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

Contextual Info: I , ,• In te rn a tio n a l X O R I Rectifier P D - 9.1646/ p r e lim in a r y IR F 7 5 2 1 D 1 FE TKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low V p Schottky Rectifier • Generation VTechnology

UltraFast 5-40 kHz

Contextual Info: PD -91750 International Rectifier IÖR IRG4IBC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.66V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

Contextual Info: PD- 91751 International IÖR Rectifier IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • • • • V ery Low 1.59V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

IRF113

Abstract: IRF1131
Contextual Info: International ISRRectifi PD1,6m IR F 1131 ON 6 T _ P R E L I M IN AR Y HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated