Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE ESBC VD Search Results

    DIODE ESBC VD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE ESBC VD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original
    FJBE2150D FDC655 FJBE2150D PDF

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


    Original
    FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor PDF

    Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition


    Original
    FJP2160D FJP2160D PDF

    c 945 TRANSISTOR equivalent

    Abstract: FDC655 fairchild power bjt ignition drivers
    Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original
    FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers PDF

    Contextual Info: FQB55N10 / FQI55N10 N-Channel MOSFET D D ! " G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous TC = 25°C Drain Current IDM Drain Current VGSS


    Original
    FQB55N10 FQI55N10 PDF

    Contextual Info: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    IRLM220A OT-223 IRLM220ATF PDF

    Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360


    Original
    MDB10S E352360 PDF

    MDB6S

    Abstract: MDB10S mdb8s
    Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360


    Original
    MDB10S E352360 MDB6S mdb8s PDF

    MDB6S

    Abstract: DSA002422
    Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification


    Original
    MDB10S MDB6S DSA002422 PDF

    MDB10SS

    Contextual Info: MDB10SS 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S


    Original
    MDB10SS MDB10S E352360 PDF

    Contextual Info: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360


    Original
    MDB10S E352360 PDF

    Contextual Info: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S


    Original
    MDB10SS MDB10S E352360 PDF

    Contextual Info: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S


    Original
    MDB10SS MDB10S E352360 PDF

    Contextual Info: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360


    Original
    MDB10S E352360 PDF

    Contextual Info: FQPF17N40 N-Channel QFET MOSFET 400 V, 9.5 A, 270 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original
    FQPF17N40 O-220F PDF

    Contextual Info: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQA44N30 PDF

    Contextual Info: FQP2N90 N-Channel QFET MOSFET 900 V, 2.2 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original
    FQP2N90 O-220 PDF

    Contextual Info: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQA44N30 PDF

    Contextual Info: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is


    Original
    FQAF16N50 PDF

    Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQA40N25 PDF

    Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQA40N25 FQA40N25 PDF

    Contextual Info: FQA27N25 N-Channel QFET MOSFET 250 V, 27 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQA27N25 PDF

    Mosfet application note fairchild

    Contextual Info: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original
    FDD5N50NZ FDD5N50NZ Mosfet application note fairchild PDF

    dpak mosfet

    Abstract: FDD3N50NZ
    Contextual Info: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original
    FDD3N50NZ FDD3N50NZ dpak mosfet PDF