DIODE ESBC VD Search Results

Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition

Contextual Info: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360

MDB6S

Abstract: MDB10S mdb8s
Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360

MDB6S

Abstract: DSA002422
Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification

MDB10SS

Contextual Info: MDB10SS 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S

Contextual Info:
 N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQPF17N40 N-Channel QFET MOSFET 400 V, 9.5 A, 270 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is

Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQA27N25 N-Channel QFET MOSFET 250 V, 27 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: RURP3060 November 2013 Data Sheet 30 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 60 ns @ IF = 30 A • Max Forward Voltage, VF = 1.5 V (@ TC = 25°C) The RURP3060 is an ultrafast diode with low forward voltage drop. This device is intended for use as

RURG8060

Contextual Info: RURG8060 November 2013 Data Sheet 80 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 85 ns @ IF = 80 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability Description • Avalanche Energy Rated

Contextual Info: RURG5060 November 2013 Data Sheet 50 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 75 ns @ IF = 50 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) Description • 600 V Reverse Voltage and High Reliability The RURG5060 is an ultrafast diode with low forward

Contextual Info: RURG3060 November 2013 Data Sheet 30 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 60 ns @ IF = 30 A Description • Max Forward Voltage, VF = 1.5 V (@ TC = 25°C) The RURG3060 is an ultrafast diode with low forward voltage drop. This device is intended for use as

Contextual Info: FQA55N25 N-Channel QFET MOSFET 250 V, 55 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQP46N15 N-Channel QFET MOSFET 150 V, 45.6 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: RURG3020CC November 2013 Data Sheet 30 A, 200 V, Ultrafast Dual Diode Features • Ultrafast Recovery trr = 50 ns @ IF = 30 A • Max Forward Voltage, VF = 1.0 V (@ TC = 25°C) Description • Reverse Voltage, VRRM = 200 V The RURG3020CC is an ultrafast dual diode with low

Contextual Info: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward

Contextual Info: RURG1520CC 30 A, 200 V, Ultrafast Dual Diode Feature Description • Ultrafast Recovery trr = 35 ns @ IF = 15 A The RURG1520CC is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies