DIODE ESBC VD Search Results
DIODE ESBC VD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE ESBC VD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, |
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FJBE2150D FDC655 FJBE2150D | |
fairchild power bjt
Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
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FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor | |
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition |
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FJP2160D FJP2160D | |
c 945 TRANSISTOR equivalent
Abstract: FDC655 fairchild power bjt ignition drivers
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FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers | |
Contextual Info: FQB55N10 / FQI55N10 N-Channel MOSFET D D ! " G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous TC = 25°C Drain Current IDM Drain Current VGSS |
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FQB55N10 FQI55N10 | |
Contextual Info: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
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IRLM220A OT-223 IRLM220ATF | |
Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360 |
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MDB10S E352360 | |
MDB6S
Abstract: MDB10S mdb8s
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MDB10S E352360 MDB6S mdb8s | |
MDB6S
Abstract: DSA002422
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MDB10S MDB6S DSA002422 | |
MDB10SSContextual Info: MDB10SS 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S |
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MDB10SS MDB10S E352360 | |
Contextual Info: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360 |
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MDB10S E352360 | |
Contextual Info: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S |
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MDB10SS MDB10S E352360 | |
Contextual Info: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S |
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MDB10SS MDB10S E352360 | |
Contextual Info: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360 |
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MDB10S E352360 | |
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Contextual Info: FQPF17N40 N-Channel QFET MOSFET 400 V, 9.5 A, 270 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQPF17N40 O-220F | |
Contextual Info: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQA44N30 | |
Contextual Info: FQP2N90 N-Channel QFET MOSFET 900 V, 2.2 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQP2N90 O-220 | |
Contextual Info: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQA44N30 | |
Contextual Info: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is |
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FQAF16N50 | |
Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQA40N25 | |
Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQA40N25 FQA40N25 | |
Contextual Info: FQA27N25 N-Channel QFET MOSFET 250 V, 27 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQA27N25 | |
Mosfet application note fairchildContextual Info: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Features Description • RDS on = 1.38 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the |
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FDD5N50NZ FDD5N50NZ Mosfet application note fairchild | |
dpak mosfet
Abstract: FDD3N50NZ
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FDD3N50NZ FDD3N50NZ dpak mosfet |