DIODE EQUIVALENT LIST Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package *Pb-free plating product number: BAV99L For 6 Pin Package „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R

LM103 zener

Abstract: LM103 7702806XA
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.0-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

LM103 zener

Abstract: LM103 LM103H MNLM103-3 zener diode mv 5 SMD ZENER DIODE 0,5w
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.3-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

LM103 zener

Abstract: zener diode mv 5 LM103H-3.6-SMD LM103
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.6-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

LM103

Abstract: 351 zener diode LM103 zener SMD ZENER DIODE 0,5w
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.9-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

KSC5302DM

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

j5304d

Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
Contextual Info: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

j5304d

Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Contextual Info: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

KSC5386

Abstract: transistor ksc5386
Contextual Info: KSC5386 KSC5386 High Voltage Color Display Horizontal Deflection Output Damper Diode Built In • • • • Equivalent Circuit C High Collector-Base Breakdown Voltage : BVCBO=1500V B High Speed Switching : tF=0.1µs (Typ) Wide S.O.A For C-Monitor (48KHz)

IC 1A datasheet

Contextual Info: KSC5338D/KSC5338DW KSC5338D/KSC5338DW D2-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW KSC5338D/KSC5338DW D2-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5801 KSC5801 High Voltage Color Display Horizontal Deflection Output Damper Diode Built In • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor (48KHz) & C-TV (~21”) Equivalent Circuit

Contextual Info: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • • High Voltage and High Speed Power Switch Application Electronic Ballast Application C Features • • • B Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode

KSC5386

Abstract: transistor ksc5386
Contextual Info: KSC5386 KSC5386 High Voltage Color Display Horizontal Deflection Output Damper Diode Built In • • • • Equivalent Circuit High Collector-Base Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ) B Wide S.O.A For C-Monitor (48KHz)

Contextual Info: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for SurfaceMount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

Contextual Info: MOTOROLA Order this document by BAV99WT1/D SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 S C -70/S O T-323 Dual Series Sw itching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection