DIODE EQUIVALENT LIST Search Results

Contextual Info: UML2N Transistors Low-frequency transistor isolated transistor and diode UML2N Features 1) The 2SC2412K and a diode are housed independently in a UMT package. External dimensions (Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 Equivalent circuit (1) 2.1 (2) 1.25

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package *Pb-free plating product number: BAV99L For 6 Pin Package „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R

LM103 zener

Abstract: LM103 7702806XA
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.0-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

marking K1 sot363

Abstract: DBAV99 bav99 diode Diode BAV99 SOT23 Electronic Designs bav99 BAV99L BAV99 SOT 23 DATA SHEET Diode bav99 sot a1 BAV99-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package Lead-free: BAV99L Halogen-free:BAV99G For 6 Pin Package „ ORDERING INFORMATION Normal BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99-AL6-R Ordering Number

LM103 zener

Abstract: LM103 LM103H MNLM103-3 zener diode mv 5 SMD ZENER DIODE 0,5w
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.3-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

LM103 zener

Abstract: zener diode mv 5 LM103H-3.6-SMD LM103
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.6-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

LM103

Abstract: 351 zener diode LM103 zener SMD ZENER DIODE 0,5w
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.9-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

marking K1 sot363

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE  EQUIVALENT  ORDERING INFORMATION Ordering Number BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R Note: Pin Assignment: A: Anode  Package SOT-23 SOT-323 SOT-523 SOT-363

BAV99

Abstract: BAV99G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package For 6 Pin Package „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R BAV99L-AN3-R BAV99G-AN3-R

XB01SB04A2BR

Contextual Info: XB01SB04A2BR ETR1601_001 Schottky Barrier Diode 1A, 40V Type •GENERAL DESCRIPTION XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.

2n1613 equivalent

Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

150a gto

Abstract: QS 100 NPN Transistor 200H KSC5603D
Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

KSC5302DM

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

j5304d

Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
Contextual Info: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

Contextual Info: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. !Equivalent circuit (3) (2) (1) Tr2 (4) Di1 (6) !Packaging specifications Type UML6N UMT5 Package L6 Marking

KSC5302DM

Abstract: surgical spirit KSC5302D
Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

KSC5302DM

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

j5304d

Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Contextual Info: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2

Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET