DIODE EJL Search Results

SG30JC6M

Abstract: TW1-12
Contextual Info: Schottky Barrier Diode Twin Diode mmm SG30JC6M Package o u tlin e ' FTO-220G Unit : mm Weight 1.54g Typ o-yhk!*i<W 4.5 60V 30A Feature • • • • • T j= i5 o r ; • yJly=E-Jly K • filR = 0 .1 5 m A < IA Tj=150°C Full Molded Low lR=0.15mA Resistance for thermal run-away

DIODE MARKING EJL

Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

ta1938

Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Contextual Info: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment

Contextual Info: SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 Thyristor / Diode Modules SKKT 460 SKKH 460 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= >?@A@B

1n6628 jantx

Abstract: JEC 400 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631 t375 1N6630 JANTX
Contextual Info: 1N6626 th ru 1N6631 MicrosemiCorp. f T hp diode e xp erts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .040 +/- .002 DIA. (1.02) Features 1.0 MIN. (25.4). • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS

TO44 package

Abstract: 09846 09843 LN61C LN62S LN65 PN120S infrared 950nm PU160 PANASONIC FL
Contextual Info: PANASONIC INDL/ELEK-CSEMI}. 72C D | t.=]32fi54 DOCHaqS 3 | 6932852 PANASONIC IN DL * E L E C T R O N IC 7T 7 K E U ? h D - " J O ? ! W 72C 0 9 84 2 _ ~ X D _ IN61C LN61C T- G aA s K / G a A s Infrared Light Em itting Diode Optical Control Systems

Contextual Info: ir\/7 1 h H ^ l r ^ n - n ]U\7U U L ^ .L ^ L r-Ü RECTIFIER, up to 1kV,1.25A, 30-75ns PFF2 PFF6 PFF4 PFF8 PFFO January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

PFF6

Contextual Info: H tM ü T K ^ IM ] 30-75ns R’ u p t o 1 k V ’ 1 -25A’ PFF2 PFF6 PFF4 PFF8 PFFO January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AX IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Q UICK REFERENCE DATA • Very low reverse recovery time

LTL907PK

Abstract: 907e HF 907 OM LTL-907LK LTL-907PK LTNE LTL-907 LTL-907E IR 907
Contextual Info: 1 LITE-ON INC 3 1E D a SS3fc.3b7 0D D nfl2 2 E3LTN SOT-23 SURFACE MOUNT u iE im LTL-907PK/907LK/907EK ! ~ V - t- \{ - 2 . \ FEATURES • • • • M ICROMINIATURE PACKAGE LED LAMP. SURFACE MOUNT ASSEMBLY LAMP. SINGLE CHIP. HIGH EFFCIENCY/LOWER POWER CONSUMP­

zener diode t5

Abstract: N4748 zener diode nomenclature 1n4742 motorola zener n7 Motorola 1N4742 Diode FAJ N4733 N4737 N4734
Contextual Info: lll141728thru1N4764 I I M3.3ZSI0 thru IMIOOZSIO ILMI1l OZS1Othru 1R!2OOZS1O -——-————. *4CUP . . 0,R:43 .~~ ~~; . ti~:i- a . q,p{~ complete operating -.-A ~ j , series silicon -oxide-passivated molded mental of characteristics plastic q; ,U,

3 Watt Zener Diode

Abstract: DIODE EJL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3EZ4.3D5 SERIES 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes 1-3 WATT DO-41 SURMETIC 30 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes 1 TO 3 WATT ZENER REGULATOR

JAN 1N4150-1

Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
Contextual Info: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |

do-41 footprint

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5913B SERIES 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes 1-3 WATT DO-41 SURMETIC 30 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes 1 TO 3 WATT ZENER REGULATOR

6h2n

Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MZP4728A SERIES 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes 1-3 WATT DO-41 SURMETIC 30 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes 1 TO 3 WATT ZENER REGULATOR

30U6C

Contextual Info: A ey xaH O A H b iH 30L16C k ch o tp o h Double-anode kenotron juin The 30U6C double-anode kenotron is designed for a. c. voltage rectification. The 30U6C double-anode kenotrons are enclo­ sed in glass bulb and are provided with an octal base and an indirectly heated oxide-coated ca­

IN5618 DIODE

Abstract: IN5622 IN5614 diode 1n5620 IN5618 1N5622 1N5614 1N5616 6 AMP 1000V DIODE lead 1N5618
Contextual Info: RECTIFIERS 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX & JANTXV Standard Recovery, 1 Amp Military Approved FEATURES DESCRIPTION • Qualified to MIL-S-19500/427 • PIV: to 1000V • Controlled Avalanche This series of medium power general purpose rectifiers can be used in the

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N4728A SERIES 1-1.3 Watt DO-41 Glass Zener Voltage Regulator Diodes 1-1.3 WATT DO-41 GLASS GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP One Watt Hermetically Sealed Glass Silicon Zener Diodes 1 WATT ZENER REGULATOR

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 180N06 Electrically Isolated Backside VDSS = 60 V ID25 = 180 A Ω RDS(on) = 5 mΩ têê ≤ 200ns kJ`Ü~ååÉä=båÜ~åÅÉãÉåí=jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê mêÉäáãáå~êó=Ç~í~=ëÜÉÉí

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 180N06 Electrically Isolated Backside VDSS = 60 V ID25 = 180 A Ω 5 mΩ RDS(on) = têê ≤ 200ns kJ`Ü~ååÉä=båÜ~åÅÉãÉåí=jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê mêÉäáãáå~êó=Ç~í~=ëÜÉÉí

buffer 74 LS 04

Abstract: 74F367
Contextual Info: <g MOTOROLA MC54/74F367 MC54/74F368 HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT, NONINVERTING AND INVERTING, 3-STATE F367 HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT, NONINVERTING 3-STATE CONNECTION DIAGRAMS MC54/74F367 VCC 0 E2 I I 1 F368 HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT,

TUBE 6j1

Abstract: 6j1 tube 6C33C 6h2n 6H7C 6h6n tube 6H13C 6H9C 6H16B 6c21
Contextual Info: IPHEMHO-yCHJlHTEJlbHblE JlAMflbl RECEIVING TUBES d B/O „MAUinPMBOPHHTOPr“ CCCP MOCKBA n P M E M H O -y c M n m E n b H b iE JlAMnbl RECEIVIN G TUBES K h u to 2 Book 2 B/O „ M A L iin P M B O P M H T O P r“ CCCP MOCKBA V/O “M A S H P R IB O R IN T O R G ”

rf mems switch

Abstract: 2SMES-01 G6K-RF dual latching relay ic omron reed relay DIODE g8 RELAY OMRON G8 250M MEMS SWITCH rf mems
Contextual Info: Advanced MOS FET Relays RF MEMS Switch High Frequency Relays & Coaxial Switch Devices A Wide Range of Form and Function Options ELECTRONIC COMPONENTS Omron OCB Advanced Switching Solutions_ƒ.indd 1 7/10/09 1:15:48 PM G3VM MOS FET Relay Lineup Current Perfectly suited for Medical, Security, Automotive