DIODE ED 26 Search Results
DIODE ED 26 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE ED 26 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C |
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MGP11 N60ED/D MGP11N60ED/D | |
Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder |
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QED121/122/123 ST2132 | |
X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
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X9520 L22329 X9522 FN8208 X9522 X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B | |
IS44Contextual Info: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control |
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8C443 IS44 | |
LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
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4101B MII-H-38534 LG direct drive motor 600v 20 amp mosfet transistor tl 11C mosfet | |
stetronContextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode |
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VT60D\SICVAR SDL-080-131 SDL-098-231 100mA: stetron | |
Infrared Emitting Diode
Abstract: LN189L
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LN189L 100Hz 100mA Infrared Emitting Diode LN189L | |
Contextual Info: OPTO DIODE CORP SSE D • bflOmfl OODDOTM 13T ■ O P D ^ d / / ' - f j > HIGH TEMPERATURE GaAIAs IR EMITTERS OD-88OLHT FEATURES • E xten d ed operating tem perature ran ge • High reliability eutectic preform die attach • No internal co atin gs • 10 0 % test for minimum p o w er requirem ent |
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OD-88OLHT OD-88O-C OD-88OLHT | |
Contextual Info: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous) |
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MI32TA MI32TA 100mA 180mW MI32T/ | |
Contextual Info: TLP750 GaAßAs IRED a PHOTO-IC Unit in mm DIGITAL LOGIC GROUND ISOLATION. LINE RECEIVER. MICROPROCESSOR S Y S T E M IN TER FACES. SW I T CHI NG PO^ER SUPPLY F E ED BAC K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP750 consists of GaA2,As high-output light emitting diode and a high speed detector of |
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TLP750 TLP750 200pF, | |
BH45-704A
Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
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345b503 T-230\ CB-356 C8-350 345b2D3 CB-349 CB-350 BH45-704A BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230 | |
Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission |
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25Gb/s 16-pin SY100EL1001ZC SY100EL1001ZCTR Z16-2 | |
general electric
Abstract: 871 diode Scans-0017338 B825 VICTOREEN resistor instrument department general electric company
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KB-2620EW
Abstract: KB-2720YW KB-2820SGD KB-E100SRW KDA0469
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89mmx3 KB-2620EW KB-E100SRW KB-2820SGD KB-2720YW KDA0469 SEP/20/2001 KB-2620EW KB-2720YW KB-2820SGD KB-E100SRW KDA0469 | |
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KB-2600EW
Abstract: KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700
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89mmx3 KB-2600EW KB-D100SRW KB-2800SGD KB-2700YW KDA0468 SEP/20/2001 KB-2600EW KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700 | |
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A) |
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PA653TT PA653TT | |
SW TACT SPSTContextual Info: JUfaCim m a n A M P com pany Monolithic PIN Diode Switches MA4SW100, 200, 300 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1-18 G H z I 's a b le 1-26 G H z S l’ST. SP O T , U sa b le 1-20 G H z (S P 3 T ) K • In sertio n I.oss 1.2 d B to IK G H z |
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MA4SW100, MA4SW200 MA4SW300 SW TACT SPST | |
2609A
Abstract: photodiode 2609b 2609B AM-VSB Ortel Corporation
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2609B 91B03 2B1-363B 2B1-BS31 Feb/94 2609A photodiode 2609b AM-VSB Ortel Corporation | |
Contextual Info: Rect i f i erDi ode OUTLI NE D10AD100VDE Uni t mm Package AD 800V10A ① ② 26.5 φ1.4 Si ngl e φ8.0 26.5 7.5 I FSM ① ② * 捺印面展開図 Marking Feat ur e Hi ghVol t age Lar geI FSM 極性 Polarity 10DA 00 品名略号 Type No. ロット記号(例) |
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Contextual Info: HEÙILETT-PACKARD/ CflPNTS LIE D • 4 4 4 7 5 6 4 O Q G T S Ô D flbS H H P A B eam Lead S ch ottk y D iodes for M ixers and D etectors 1-26 GHz Technical Data HSCH-5300 Series Features • P la tin u m Tri-M etal System High Temperature Stability • Silicon N itrid e P assiv atio n |
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HSCH-5300 HSCH-5320, HSCH-53XX HSCH-5314, HSCH-5318, | |
IN4004
Abstract: E20325 diode in4004
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5900K, 5902K 5991K 05-125V 5900K IN4004 E20325 diode in4004 | |
Contextual Info: IRF3708/3708S/3708L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power D2Pak IRF3708S TO-220AB IRF3708 TO-262 IRF3708L |
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IRF3708/3708S/3708L IRF3708S O-220AB IRF3708 O-262 IRF3708L EIA-418. O-220AB | |
ORTEL
Abstract: AM-VSB photodiode amplifier PIN Photodiode Module For CATV Receiver 2610C
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2610C 19940rtel 91B03 2B1-363S 2B1-B231 Feb/94 ORTEL AM-VSB photodiode amplifier PIN Photodiode Module For CATV Receiver | |
Contextual Info: SKKD 75F THYRISTOR BRIDGE,SCR,BRIDGE 4*5 (445 2645* 7 ""# & & & &% ( ( 26( 7 8/ % "9#: /# $-: ; 7 // < "0## "0## Symbol Conditions Values Units 26( % "9#: ; 7 9/ "## < /9 > 26*5 ;)? 7 0/ <: "# % ;)? 7 "/# <: "# % |
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