DIODE ED 26 Search Results

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

Contextual Info: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)

KB-2670EW

Abstract: KB-2770YW KB-2870SGD KB-G100SRW
Contextual Info: 8.89mmx8.89mm LED LIGHT BARS KB-2670EW KB-G100SRW KB-2770YW KB-2870SGD Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY HIGH EFFICIENCY RED SUPER BRIGHT RED YELLOW SUPER BRIGHT GREEN The High Efficiency source color devices are made with

transistor 431 a

Abstract: KB-2855SGD KB-2655EW KB-2755YW KB-C100SRW KDA0467 KB-2855 KB-265
Contextual Info: 8.89mmx8.89mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-C100SRW SUPER BRIGHT RED KB-2755YW YELLOW KB-2855SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2655EW The High Efficiency source color devices are made with

KB-2635EW

Abstract: KB-2735YW KB-2835SGD KB-F100SRW KDA0470 2735Y
Contextual Info: 3.81mmx19.05mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-F100SRW SUPER BRIGHT RED KB-2735YW YELLOW KB-2835SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2635EW The High Efficiency source color devices are made with

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A)

ORTEL

Abstract: AM-VSB photodiode amplifier PIN Photodiode Module For CATV Receiver 2610C
Contextual Info: □ A T A S A H ortel C O R P O R A T I O N 2610 C Broadband Photodiode Module • • • • • Flat Response, ±0.5 dB Frequency Response up to 600 M Hz High Responsivity >0.85 A /W Internal Current Gain >7 dB Compatible with 75 SI C A TV amplifier The Ortel Model 2610C is a packaged photodiode with internal current gain designed for use in

Contextual Info: In te rn a tio n a l p d - s i 265h lO R R e c tifi Gf PRELIMINARY IR F 7 5 0 1 HEXFET Power MOSFET • • • • • • • G eneration V Technology Ulrtra Low O n-Resistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile < 1 .1 mm A vailable in Tape & Reel

Contextual Info: New Product VBT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

VBT1045

Contextual Info: New Product VBT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

Contextual Info: VBT1545CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

r03003

Contextual Info: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier Features • Very Low Noise 1.1 dB Typical • High +36 dBm Typical IP3 • 16 dB Typical Gain • 6.0 Volt Bias • 26% High Power Added Efficiency Description The MPS-0809A9-85 is a low noise high dynamic

DAiode

Abstract: laser diode toshiba
Contextual Info: TOSHIBA TOLD9462MD : :_ TOSHIBA LASER DAIODE TOLD9462MD InGaAlP LD Light Source for DVD Application À p = 6 50n m t y p . Lasing Wavelength Optical Output Power :P o =7m W Operai icn Case Temperature : T c = —10~ 7 0 °C PIN CONNECTION io

Contextual Info: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS

diode SS 3

Contextual Info: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance

Contextual Info: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)

automatic heat detector

Abstract: diode Scans-0017750
Contextual Info: AC/HL. DD A .C. M AINS D O U B LE D IO D E TR IO D E R A T IN G . 4-0 H eater Voltage . H eater C u rre n t amps . Anode Voltage (m axim um ) *Mutual Conductance (m A /V ) ♦Amplification Factor *Anode A .C . Resistance (ohms) *A t Ea; =100 ; E g = 0 .

26Z5W

Abstract: rectifier diode 6 amp 400 volt ETD22 full wave rectifier tube power supply Rectifier Tubes Scans-0017374 26Z5 MIL-E-1C
Contextual Info: 26Z5W TENTATIVE DATA PREMIUM TUBE - TUN6-80L — / - \ DOUBLE DIODE MINIATURE TYPE r - 8 COATED UN IPOTENTIAL CATHODE - MAX. ~ r~ HEATER I IS * 1 IE MAX 26.5 VOLTS T -6 * 0.20 AMP. AC OR DC 2 - Ï 16 ANY MOUNTING POSITION

k2313

Abstract: L398H k231
Contextual Info: TOSHIBA 2SK2313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2313 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 15.9 MAX.

GR-468

Abstract: c65 diode dfb laser diode cwdm dfb laser diode ED 03 Diode
Contextual Info: 1310-1610 nm CWDM DFB Laser Diode LDT-X1XX1M-H Features • InP/InGaAsP MQW structure • 5mW uncooled operation from 0 to 70ºC • Hermetically sealed package • Built-in InGaAs monitor photodiode • Complies with Bellcore GR-468 • Single mode operation with high SMSR

VBT4045BP

Contextual Info: New Product VBT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses