DIODE ED 26 Search Results

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

IS44

Contextual Info: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo­ diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

Infrared Emitting Diode

Abstract: LN189L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN189L GaAIAs Infrared Light Emitting Diode Light source for distance m easuring system s Il 0.4+0.1 M ark R ed • v 0 .6+ 0.1 F eatures - • H igh-pow er output, high-efficiency : P Q = 5.5 mW (typ.) • Fast response and high-speed modulation capability : tr, t( = 20 ns (typ.)

Contextual Info: OPTO DIODE CORP SSE D • bflOmfl OODDOTM 13T ■ O P D ^ d / / ' - f j > HIGH TEMPERATURE GaAIAs IR EMITTERS OD-88OLHT FEATURES • E xten d ed operating tem perature ran ge • High reliability eutectic preform die attach • No internal co atin gs • 10 0 % test for minimum p o w er requirem ent

Contextual Info: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)

Contextual Info: TLP750 GaAßAs IRED a PHOTO-IC Unit in mm DIGITAL LOGIC GROUND ISOLATION. LINE RECEIVER. MICROPROCESSOR S Y S T E M IN TER FACES. SW I T CHI NG PO^ER SUPPLY F E ED BAC K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP750 consists of GaA2,As high-output light emitting diode and a high speed detector of

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

general electric

Abstract: 871 diode Scans-0017338 B825 VICTOREEN resistor instrument department general electric company
Contextual Info: — PRODUCT INFORMATION — Page 1 1DG3-A Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS Y jߣ$ • MONOCHROME TYPE > 22000 VOLTS DC ■ 0 .5 MILLIAMPERES DC ■ X-RADIATION RATING The 1DG3-A is a fila m e n ta ry dio d e de sig n ed fo r use in te le v is io n re c e iv e rs as the h ig h -v o lta g e r e c tifie r to s u p p ly

KB-2620EW

Abstract: KB-2720YW KB-2820SGD KB-E100SRW KDA0469
Contextual Info: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-E100SRW SUPER BRIGHT RED KB-2720YW YELLOW KB-2820SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2620EW The High Efficiency source color devices are made with

KB-2600EW

Abstract: KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700
Contextual Info: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-D100SRW SUPER BRIGHT RED KB-2700YW YELLOW KB-2800SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2600EW The High Efficiency source color devices are made with

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A)

SW TACT SPST

Contextual Info: JUfaCim m a n A M P com pany Monolithic PIN Diode Switches MA4SW100, 200, 300 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1-18 G H z I 's a b le 1-26 G H z S l’ST. SP O T , U sa b le 1-20 G H z (S P 3 T ) K • In sertio n I.oss 1.2 d B to IK G H z

2609A

Abstract: photodiode 2609b 2609B AM-VSB Ortel Corporation
Contextual Info: O A T A ^ C O R P O R A T I O N 2609A Broadband Photodiode Module 2609B Broadband Photodiode Module • • • • • Flat Response, ± 0 .5 dB Frequency Response up to 860 MHz High Responsivity > 0 .8 5 A/W Internal Current Gain , 6 dB typ. Compatible with 75 Q CATV amplifier

Contextual Info: Rect i f i erDi ode OUTLI NE D10AD100VDE Uni t mm Package AD 800V10A ① ② 26.5 φ1.4 Si ngl e φ8.0 26.5 7.5 I FSM ① ② ＊ 捺印面展開図 Marking Feat ur e Hi ghVol t age Lar geI FSM 極性 Polarity 10DA 00 品名略号 Type No. ロット記号（例）

Contextual Info: HEÙILETT-PACKARD/ CflPNTS LIE D • 4 4 4 7 5 6 4 O Q G T S Ô D flbS H H P A B eam Lead S ch ottk y D iodes for M ixers and D etectors 1-26 GHz Technical Data HSCH-5300 Series Features • P la tin u m Tri-M etal System High Temperature Stability • Silicon N itrid e P assiv atio n

IN4004

Abstract: E20325 diode in4004
Contextual Info: DESCRIPTION AND FEATURES .070 .040 .260 S Q. Mounting: Will snap-fit into Ø.315/.312 sq. hole in panels .020/.130 thick. Mounting hole pattern on page SP3. All dimensions in inches. .380 S Q. Wire Leads: No.22 AWG 105°C , lead color: red and white, 4.40/4.80 long, stripped .430/.570

Contextual Info: IRF3708/3708S/3708L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power D2Pak IRF3708S TO-220AB IRF3708 TO-262 IRF3708L

ORTEL

Abstract: AM-VSB photodiode amplifier PIN Photodiode Module For CATV Receiver 2610C
Contextual Info: □ A T A S A H ortel C O R P O R A T I O N 2610 C Broadband Photodiode Module • • • • • Flat Response, ±0.5 dB Frequency Response up to 600 M Hz High Responsivity >0.85 A /W Internal Current Gain >7 dB Compatible with 75 SI C A TV amplifier The Ortel Model 2610C is a packaged photodiode with internal current gain designed for use in

Contextual Info: SKKD 75F THYRISTOR BRIDGE,SCR,BRIDGE 4*5 (445 2645* 7 ""#  & &   & &%     ( ( 26( 7 8/  %  "9#: /# $-: ; 7 // < "0## "0## Symbol Conditions Values Units 26( %  "9#: ; 7 9/ "## < /9  >  26*5 ;)? 7 0/ <: "# % ;)? 7 "/# <: "# %