DIODE ED 26 Search Results

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

hb5-132

Abstract: S370 S370 UDT
Contextual Info: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the

6bv8

Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Contextual Info: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and

PS2002B

Abstract: PS2002 transistor replacement 0z99
Contextual Info: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/MB Features • Popular T -l 3/4 diameter package. • Choice o f various viewing angles. • Available on tape and reel. • Reliable and robust.

Contextual Info: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2SURC/S406 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.

rover

Abstract: J1000
Contextual Info: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

Contextual Info: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.

IS44

Contextual Info: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo­ diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

Infrared Emitting Diode

Abstract: LN189L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN189L GaAIAs Infrared Light Emitting Diode Light source for distance m easuring system s Il 0.4+0.1 M ark R ed • v 0 .6+ 0.1 F eatures - • H igh-pow er output, high-efficiency : P Q = 5.5 mW (typ.) • Fast response and high-speed modulation capability : tr, t( = 20 ns (typ.)

Contextual Info: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)

Contextual Info: TLP750 GaAßAs IRED a PHOTO-IC Unit in mm DIGITAL LOGIC GROUND ISOLATION. LINE RECEIVER. MICROPROCESSOR S Y S T E M IN TER FACES. SW I T CHI NG PO^ER SUPPLY F E ED BAC K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP750 consists of GaA2,As high-output light emitting diode and a high speed detector of

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

general electric

Abstract: 871 diode Scans-0017338 B825 VICTOREEN resistor instrument department general electric company
Contextual Info: — PRODUCT INFORMATION — Page 1 1DG3-A Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS Y jߣ$ • MONOCHROME TYPE > 22000 VOLTS DC ■ 0 .5 MILLIAMPERES DC ■ X-RADIATION RATING The 1DG3-A is a fila m e n ta ry dio d e de sig n ed fo r use in te le v is io n re c e iv e rs as the h ig h -v o lta g e r e c tifie r to s u p p ly

KB-2620EW

Abstract: KB-2720YW KB-2820SGD KB-E100SRW KDA0469
Contextual Info: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-E100SRW SUPER BRIGHT RED KB-2720YW YELLOW KB-2820SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2620EW The High Efficiency source color devices are made with

KB-2670EW

Abstract: KB-2770YW KB-2870SGD KB-G100SRW
Contextual Info: 8.89mmx8.89mm LED LIGHT BARS KB-2670EW KB-G100SRW KB-2770YW KB-2870SGD Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY HIGH EFFICIENCY RED SUPER BRIGHT RED YELLOW SUPER BRIGHT GREEN The High Efficiency source color devices are made with

transistor 431 a

Abstract: KB-2855SGD KB-2655EW KB-2755YW KB-C100SRW KDA0467 KB-2855 KB-265
Contextual Info: 8.89mmx8.89mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-C100SRW SUPER BRIGHT RED KB-2755YW YELLOW KB-2855SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2655EW The High Efficiency source color devices are made with

KB-2635EW

Abstract: KB-2735YW KB-2835SGD KB-F100SRW KDA0470 2735Y
Contextual Info: 3.81mmx19.05mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-F100SRW SUPER BRIGHT RED KB-2735YW YELLOW KB-2835SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2635EW The High Efficiency source color devices are made with