DIODE ED 16 Search Results

Contextual Info: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

Contextual Info: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

RK105

Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

rover

Abstract: J1000
Contextual Info: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

Contextual Info: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)

12sR7

Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Contextual Info: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,

PICTURE TUBE

Abstract: Scans-0017354
Contextual Info: TENTATIVE 1X2 DATA - TUNG'SOL \ DIODE 7“ 8 ^ M AX A M IN IA T U R E TY PE COATED F IL A M E N T t 2 i£ M AX T -6 ± 1 . 2 5 V O LT S 1 2j l ; 16 : M AX .1 2 0 0 M A. AC A N Y MOUNTING P O S IT IO N ' P I U S 3 AHO 7 MAT BE US ED AS T I E

6293 tube

Abstract: 12DS7 6293 Scans-0017276
Contextual Info: I2DS7 TUNßSOl TWIN DIODE-TETRODE MINIATURE 2.“ UN IP O T E N T I A L 8 MAX. TYPE CATHODE HEATER 2¿ 8 12.6 VOLTS MAX. T-6Ì 0.4 AMR AC OR DC 2 5 8 ANY M O U N T I N G POSITION Ï Ï W GLASS SPACE BULB CHARGE GRID TETRODE BOTTOM B ASING VIEW DIAGRAM d ED EC

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

"Phase Discriminator"

Abstract: unit water heater ratio Detector
Contextual Info: 5726/6AL5W/6097 PREMIUM TUBE TUNO-SOL TWIN DIODE M I N I A TU RE TYPE V COAT ED UNI POT EN T IA L CAT HOD E max ' HEATER >S| 1'2 T-5* MAX. 3" 1|-4 _L MAX. 0.3 0 AMP. 6.3 VO LT S AC OR DC W" ANY M O U N T I N G POS TION GLASS BULB MI NI AT UR E BUTTON 7 PIN BA SE

DIODE REDRESSEMENT

Abstract: 35w4
Contextual Info: H U I2 ^ DIODE MONOPLAQUE BBLVU U f A R ed resseu r C A R A C T E R IS T IQ U E S G E N E R A L E S C athode à chauffage indirect A lim entation du filam ent en s é rie s a n s lampe de cadran 35 7,5 150 a v e c lam pe de cadran 32 V 5,5 V 150 mA A 19-4

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

ks823c

Contextual Info: FUJI '95 No.1£ [ s U , [ i È i i JjÇ àL:_ ~ ± m S e:m'-i-Go ri d u .ct o r N e W- P r ó d ü V 3 7 9 0 V /5 A SCHOTTKY BARRIER DIODE KS823C09 mm JH Features • i ; l £ l a nn S urface m ount device • Lew V f S Lper high spe ed sw itching Hi jh reliability by planer design

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

tube 7c6

Abstract: 7C6 TUBE
Contextual Info: 7C6 TUNG'SOL ». DOUBLE DIODE TRIO D E T-9 COATED U N IP O T E N T IA L CATHODE MAX 9 2_5 " 32 ¿ 6 .3 VOLTS 0 .1 5 0 AMPERES AC OR DC - ' 16 IN C I R C U I T S WHERE THE CATHODE I S NOT D I R E C T L Y C ONNECT ED TO THE H E A T E R , THE P O T E N T I A L D I F F E R E N C E B E T W E E N

Contextual Info: SCHOTTKY DIODE ARRAY SDA12 ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES T h e S D A 1 2 S c h o ttk y B a rrie r D io d e A rra y is d e s ig n e d to re d u c e re fle c tio n n o is e o n h ig h spe ed p a ra lle l d a ta lin e s. • R e d u c e d re fle c tio n n o is e

F16H

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES T h e S D A 3 2 S c h o ttk y B a rrie r D io d e A rra y is d e s ig n e d to re d u c e re fle c tio n n o is e o n h ig h spe ed p a ra lle l d a ta lin e s. • T h e d e v ic e h e lp s s u p p re s s tra n s ie n ts cau sed

Contextual Info: • MbflbEEb 0 0 ü l 7 0 b 7ST « I X Y n ix Y S MDD72 Diode Modules lTAV = 2 x 99 A i < < VRRM = 400-1800 V 500 700 900 1300 1500 1700 1900 Vrrm V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD72-04N1 MDD72-06N1 MDD72-08N1 MDD72-12N1 MDD72-14N1 MDD72-16N1