DIODE ED 15 Search Results

Contextual Info: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers

Contextual Info: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

Contextual Info: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package

RK105

Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package

DBA10

Contextual Info: IOrdering number:EN64SD D B A 10 Diffused Junction Silicon Diode SAfÊYOI V jJ v Features %<• Package Dimensions * Plastic m olded structure. * Peak reverse v u lta g c iV ^ M '^ ^ to GOOV *Average reclin ed curren l:I q ~I.OA , unit: mm .// 1093 / / / /

MBD702

Abstract: MBD502
Contextual Info: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.

DSAIH0002548

Abstract: 1N314
Contextual Info: B K C INTERNATIONAL 03E ] | HVTTöB □□00175 ‘i £ _ Type No. 1N314_ T - * t - o 7 G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 Tele Fax (617) 681-9135

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

6cw4

Abstract: ESAD85M-009 a506
Contextual Info: ESAD85M-009 25a k K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features I ns u l a t ed p a c k a g e b y f ul l y m o l d i n g , •1& V p Low V f Connection Diagram Super high speed sw itchin g. High reliability by planer design. : Applications

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

DIODE REDRESSEMENT

Abstract: 35w4
Contextual Info: H U I2 ^ DIODE MONOPLAQUE BBLVU U f A R ed resseu r C A R A C T E R IS T IQ U E S G E N E R A L E S C athode à chauffage indirect A lim entation du filam ent en s é rie s a n s lampe de cadran 35 7,5 150 a v e c lam pe de cadran 32 V 5,5 V 150 mA A 19-4

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

PICTURE TUBE

Abstract: Scans-0017354
Contextual Info: TENTATIVE 1X2 DATA - TUNG'SOL \ DIODE 7“ 8 ^ M AX A M IN IA T U R E TY PE COATED F IL A M E N T t 2 i£ M AX T -6 ± 1 . 2 5 V O LT S 1 2j l ; 16 : M AX .1 2 0 0 M A. AC A N Y MOUNTING P O S IT IO N ' P I U S 3 AHO 7 MAT BE US ED AS T I E

3N161

Abstract: topography
Contextual Info: OMÜ^IIIL 3N161 Diode Protected P-Channel Enhancem ent Mode M O S FET G E N E R A L D E SC R IP T IO N PIN CONFIGURATION D IO D E-P R O TEC T ED E N H A N C EM EN T -T Y P E M E T A L -O X ID E -SE M IC O N D U C T O R T R A N S IS T O R TO-72 For applications requiring very high input impedance, such

Contextual Info: niCRO PAC IN D U ST R IE S 42E IN C D b l l 2 b 4 G OOOCHOb H 1 B MPI GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE G S 3040 * HIGH INTENSITY G aA IA s VER SIO N A V A IL A B L E M i-U MINIATURE HIGH EFFICIEN C Y LED WITH N AR RO W BEAM A N G LE G LA S S/M E TA L W ELD ED P A C K A G E

6ax4gt

Abstract: 6ax4gt tube b5 diode Tube 4-400 television external parts b585 6AX4 damper rs tube B5147
Contextual Info: 6AX4GT T U N O S OL DIODE F O R D A M P E R S E R V IC E IN T V R E C E I V E R S C O A T E D U N IP O T E N T IA L C A T H O D E A N Y M O U N T IN G P O S IT IO N B O T T O M V IE W BASING DIAGRAM JE D E C 4CG PINS 1,2,4, & 6 SH A LL NOT BE IN TER M ED IA TE S H E L L

F16H

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES T h e S D A 3 2 S c h o ttk y B a rrie r D io d e A rra y is d e s ig n e d to re d u c e re fle c tio n n o is e o n h ig h spe ed p a ra lle l d a ta lin e s. • T h e d e v ic e h e lp s s u p p re s s tra n s ie n ts cau sed

Contextual Info: • MbflbEEb 0 0 ü l 7 0 b 7ST « I X Y n ix Y S MDD72 Diode Modules lTAV = 2 x 99 A i < < VRRM = 400-1800 V 500 700 900 1300 1500 1700 1900 Vrrm V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD72-04N1 MDD72-06N1 MDD72-08N1 MDD72-12N1 MDD72-14N1 MDD72-16N1