DIODE ED 15 Search Results
DIODE ED 15 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE ED 15 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
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5091-4932E 5966-0780E order50 hp11612a anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473 | |
LN189SContextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo |
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LN189S LN189S | |
Contextual Info: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers |
OCR Scan |
APT2X30D60J OT-227 OT-227 | |
Contextual Info: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply |
OCR Scan |
APT15D100K O-220 O-22QAC | |
ca3141eContextual Info: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A |
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CA3141 CA3141E CA3141 16-lead | |
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPRTR5V0U4D Preliminary DIODE I N T EGRAT ED QU AD U LT RA-LOW CAPACI T AN CE ESD PROT ECT I ON ̈ DESCRI PT I ON The UTC UPRTR5V0U4D is an integrated quad ultra-low capacitance ESD protection diode array. it uses UTC’s advanced |
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100nA) QW-R601-077 | |
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode |
OCR Scan |
APT2X100D60J OT-227 OT-227 | |
SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
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SLD201 SLD201U SLD201V 720kHz 30kHz SLD201U/V SLD201V SLD201U TO50 package noise diode | |
selfoc
Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
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EDL1300CD-FC EDL1300FJ-S/M: EDL1300CD 33bU4Ub EDL1300CD-FC /EDL1300FJ-S 1300CD EDL1300FJ-S selfoc EPITAXX SMF.300 EDL1300CD EDL1300FJ-S | |
marking 531 121
Abstract: S1 DIODE schottky diode MARKING CODE 4b
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OCR Scan |
OD-323 100jiA 100mA G0G1771 marking 531 121 S1 DIODE schottky diode MARKING CODE 4b | |
Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C |
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MGP11 N60ED/D MGP11N60ED/D | |
zener diode 1N PH 48
Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
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OCR Scan |
RH821-829, RH3154-3157A, RH935-939B, RH941-944B RH3501-3504 RH4890-4895A. AZRH8825 zener diode 1N PH 48 zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565 | |
Contextual Info: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with |
OCR Scan |
VTL23G2B, 23G3B | |
H11L
Abstract: H11L2 RE12 H11L1 H11L3
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H11L1 H11L2 H11L3 ST2069 ST2070 ST2015 ST2016 ST2017 H11L RE12 H11L3 | |
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Contextual Info: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package |
OCR Scan |
ENN6966 EC2C01C EC2C01C] ECSP1008-2 | |
RK105Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package |
OCR Scan |
ULE78996 RK105 | |
6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
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OCR Scan |
ET-T981 600-milliampere 6bv8 diode 12-55 c capacitor RGF general electric RK 1900 | |
DBA10Contextual Info: IOrdering number:EN64SD D B A 10 Diffused Junction Silicon Diode SAfÊYOI V jJ v Features %<• Package Dimensions * Plastic m olded structure. * Peak reverse v u lta g c iV ^ M '^ ^ to GOOV *Average reclin ed curren l:I q ~I.OA , unit: mm .// 1093 / / / / |
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DBA10 DBA10 | |
IS44Contextual Info: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control |
OCR Scan |
8C443 IS44 | |
Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix) |
OCR Scan |
MJD122 300uS, | |
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSH200 D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix) |
OCR Scan |
KSH200 | |
Contextual Info: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix) |
OCR Scan |
MJD117 | |
1Ft TRANSISTOR
Abstract: TRANSISTOR 1FT MJD117 Darlington DIODE T25 PNP 2A DPAK MJD117 TIP117
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OCR Scan |
MJD117 TIP117 -035-Ot -log-200 1Ft TRANSISTOR TRANSISTOR 1FT MJD117 Darlington DIODE T25 PNP 2A DPAK TIP117 | |
rover
Abstract: J1000
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OCR Scan |
ED-Q2078 GL100MN0MP1M GL100MN0MP1M rover J1000 |