DIODE E61 Search Results

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

C26B

Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Contextual Info: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

H6327

Abstract: E6327 PG-SCD80-2-1 UM-38 BB 555-02V E7912 BBY57-05W DIODE Sp marking code H7902 cu marking code diode SP000745054
Contextual Info: BBY57. Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • High capacitance ratio • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For control elements such as TCXOs and VCXOs

composition of material used in zener diode

Abstract: IEC-1000-4-2
Contextual Info: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05

65 diode 1N

Abstract: IEC-1000-4-2 RSA6.1J4
Contextual Info: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05

IEC-61000-4-2

Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN zExternal dimensions Unit : mm zApplication Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 zFeatures 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

6.1EN

Abstract: IEC-61000-4-2
Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

E6327

Abstract: BBY59-02V cross BB857 BB831 BB689 BB664 V2 3N DIODE
Contextual Info: BB837/BB857. Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

composition of material used in zener diode

Abstract: IEC-61000-4-2
Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

Contextual Info: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.

diode e61

Abstract: ROHM 1SR159-200 ROHM 200V 200mA DIODE 110v zener 10w
Contextual Info: ESD Protection diode Silicon Epitaxial Planer RSA6.1EN Characteristic Peak Pulse-1(tp=10X1000µs) Peak Pulse Power-2(tp=8X20µs) DIMENSION (UNIT:mm) Limits 30W Ppk 200W Junction temperature Tj 150˚C Storage temperature Tstg -55~150°C 0.9±0.1 2.0±0.2

Contextual Info: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.

TRANSISTOR D2102

Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Contextual Info: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and

CM200DY-12E

Abstract: CM200DY12E
Contextual Info: b4E m D 72T4b21 00Db744 344 * P R X CM200DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC Dual IGBTMOD £ M o d illo

E6327

Abstract: SCD80 BB857 d bb833 E7908 BB857 BB831 BB689 BB664 BB555E7902 BB833 V2 3N DIODE BB857E7908
Contextual Info: A p p l i c a t i o n N o t e , V 2. 1, F e b . 2 00 8 A p p li c a t i o n N o t e N o . 0 4 7 M a t c h i ng M e th o d s f o r V a r i ab l e C a p a c i t an c e Diodes R F & P r o t e c ti o n D e v i c e s Edition 2008-02-14 Published by Infineon Technologies AG,

diode e61

Abstract: bidirectional zener diode
Contextual Info: High voltage/high energy of surge protection elements EMD UM 2 D5 It protect from surge current at lower voltage and higher speed than protection inside the varistor. These are the key parts to high reliability set. clamping voltage Vz TYPE No. package surge

XC6372E501P

Contextual Info: XC6372 Series Dual Mode [PWM/PFM] Step-up DC/DC Converters HP010199 • Applications ◆ CMOS Low Power Consumption ◆ Operating Voltage: 0.9V~10.0V ◆ Output Voltage Range: 2.0V~7.0V ◆ Output Voltage Accuracy: ±2.5% ◆ Selectable Oscillator Frequency:

chip die npn transistor

Contextual Info: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

M68HC11EVBU

Abstract: smd diode S6 6D CRT Monitor repair schematic ASM-0100 itt cannon d subminiature 1n4148 ITT 12J8 ECHO schematic diagrams MC68HC11E9FN1 RESISTOR-10M OHM
Contextual Info: M68HC11EVBU/D REV 3 April 1997 M68HC11EVBU UNIVERSAL EVALUATION BOARD USER’S MANUAL Information contained in this document applies to REVision B M68HC11EVBU Universal Evaluation Boards. MOTOROLA Inc. 1990, 1997; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to

LM393AH

Abstract: LM393 bistable multivibrator LM393AJ LM393 LM193 lm333
Contextual Info: LM193/LM293/LM393/LM2903 Nat iona I Semiconductor LM193/LM293/LM393/LM2903 Low Power Low Offset Voltage Dual Comparators General Description • ■ ■ ■ The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as

diode cross reference e61

Abstract: 1SMB5937BT3G EMK212BJ106KG-T LM5001 FOD121 GRM188R71H103KA01D LM431 LM5001MA TMK212BJ105KG-T noise diode generator
Contextual Info: National Semiconductor RD-171 Robert Hanrahan December 2008 1.0 Design Specifications Inputs Output #1 Output #2 VinMin=9V Vout1=5V Vout2=-5V VinMax=30V Iout1=0.25A Iout2=0.25A 2.0 Design Description A very low noise differential power supply for split rail systems