DIODE DUMPER Search Results

Transistor NEC 30

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode

TRANSISTOR K 314

Abstract: NEC semiconductor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in

2SD1843

Abstract: diode dumper
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to

ce1a3q

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

dumper

Abstract: darlington transistor with built-in temperature 2SD1693 dumper diode
Contextual Info: NPN SILICON DARLINGTON TRANSISTOR 2SD1693 DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS in millimeters inches B-C and a dumper diode at E-C. 8.5 MAX. (0.334 MAX.) It is suitable for use to operate from IC without predriver, such as

CE1F3P

Abstract: D1617
Contextual Info: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

transistor bc 248

Abstract: transistor BC 247 ic 5518 2SB1150 KPR12
Contextual Info: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1150 The 2SB1150 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS B-C and a dumper diode at E-C. in millimeters inches 8.5 MAX. 2.8 MAX. (0.334 MAX.) H (0.11 MAX.) It is suitable for use to operate from IC without predriver, such as

diode dumper

Abstract: 2SD1630
Contextual Info: NPN SILICON DARLINGTON POWER TRANSISTOR 2SD1630 D E S C R IP T IO N The 2 SD 1 6 3 0 is a darlington transistor built-in a zener diode at P A C K A G E D IM E N S IO N S B-C and a dumper diode at E-C. in millimeters inches It is suitable for use to operate from IC w ithout predriver, such

2SB1093

Abstract: 2SD1579 dumper diode
Contextual Info: NPN SILICON DARLINGTON TRANSISTOR 2SD1579 DESCRIPTION The 2SD1579 is a darlington transistor including a dumper diode at E-C. PACKAGE DIMENSIONS It is suitable for general driving use, such as hammer, solenoid, in millimeters inches lamp or motor. FEATURES

NEC semiconductor

Abstract: C11531E dumper diode dumper
Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect

1000C

Abstract: 2SB1149 diode dumper
Contextual Info: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1149 The 2SB1149 is a darlington transistor built-in dumper diode PACKAGE DIMENSIONS at E-C. in millimeters inches It is suitable for use to operate from IC without predfiver, such 8.5 MAX. (0.334 MAX.)

NEC diode

Abstract: transistor marking 7D 2SD1695 C11531E
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA

Tf 227

Abstract: 2SB1093 2SD1579 dumper diode
Contextual Info: PIMP SILICON DARLINGTON TRANSISTOR 2SB1093 DESCRIPTION FEATURES The 2SB1093 is a darlington transistor including a dumper diode at C-E. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. • High DC currentijain. • High current capability, wide ASO and low collector saturation

d 1698

Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
Contextual Info: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.

diode ssil

Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
Contextual Info: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,

2SD1692

Abstract: dumper diode
Contextual Info: IM F f /N P N SILICON DARLINGTON TRANSISTOR / D E S C R IP TIO N 2SD1692 The 2S D 1692 is a darlington transistor built-in dumper diode PAC KAG E D IM E N S IO N S at E-C. in millimeters inches It is suitable fo r use to operate from IC w ith o ut predriver, such

2SD985

Abstract: 2SB794 2SB795 2SD986
Contextual Info: PNP SILICON DARLINGTON POWER TRANSISTORS 2SB794.2SB795 D E S C R IP TIO N The 2SB794, 2SB795 are darlington transistors built-in dumper PA C K A G E D IM E N S IO N S diodes at C-E. in millimeters inches They are suitable for use operating from 1C w ithout predriver,

2SD986

Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Contextual Info: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

2SC5858

Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Contextual Info: 1 Horizontal – Deflection – Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR for TV / Monitor 1. Progressive/ High Vision/Digital TV Part Number

IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid