DIODE DETECTOR X BAND Search Results

Contextual Info: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave

s276

Abstract: ODS-276 23/AF30Z-30-00-20
Contextual Info: Preliminary Specification High Reliability Semiconductor Schottky Detector Diodes ML40215-S-120 ML40215-S-276 V1.00 ODS 120 Outline Features x x x Low I/F Noise High Sensitivity Space Qualified Description The ML40215-S is a low barrier N type Silicon detector diode in the ODS

Contextual Info: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and

tangential

Abstract: AEY17 germanium rectifier diode K1007
Contextual Info: AEYI7 MICROWAVE DETECTOR DIODE Sub-m iniature germ anium bonded backward diode p rim arily intended for broadband low lev el d etecto r applications at X -ban d. QUICK R E FE R E N C E DATA Frequency range 1 to 18 GHz Typ. zero bias tangential sen sitivity at X-band

tba 450

Abstract: dc46a GUNN DIODE plessey
Contextual Info: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B

sbx201c

Contextual Info: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage

Contextual Info: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.

Contextual Info: P^piG EC PLESSEY DC1501/12/44 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES FOR INTRUDER ALARM APPLICATIONS DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

S11 CASE MARKING diode

Abstract: 0-834-10 SBX201C 2V320
Contextual Info: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.

LG diode 831

Abstract: MA4E2054-287T
Contextual Info: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer

S11 SCHOTTKY diode

Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
Contextual Info: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band

Contextual Info: 5082-2759 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit

Contextual Info: P^piGEC PLESSEY DC1551/54/58 SILICON SCHOTTKY X-BAND ZERO BIAS WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable lor applications requiring high performance detectors. These diodes can be supplied in matched pairs by the

Contextual Info: 37bô5 22 QQlfl4êO lfc>G « P L S B M GEC PIESSEY SEMICONDUCTORS DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: P B tiG E C plessey DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance detectors. These diodes can be supplied in matched pairs by the

Contextual Info: AEL10H Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandP-X Test Freq5.0G Frequency Min. (Hz)50M Frequency Max. (Hz)11G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit150

Contextual Info: 5082-2758 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit

Contextual Info: 5082-2752 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit

Contextual Info: MA40251 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40258 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40293 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: 1N630 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq6.8G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15 @Power Level (test) (W)5.0u

Contextual Info: MA40230 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: 1N358R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq12G Frequency Min. (Hz)1G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15 @Power Level (test) (W)